PHILIPS 1PS79SB30

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB30
Schottky barrier diode
Product data sheet
2001 Feb 20
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB30
FEATURES
PINNING
• Very low forward voltage
PIN
• Very low reverse current
1
cathode
• Guard ring protected
2
anode
DESCRIPTION
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
handbook, halfpage
1
2
• Protection circuits
• Blocking diodes
Top view
MGU325
• Low power consumption applications (e.g. hand-held
applications).
Marking code: G1.
DESCRIPTION
Fig.1
Planar Schottky barrier diode encapsulated in a SC-79
(SOD523) ultra small SMD plastic package.
Simplified outline (SC-79; SOD523)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
40
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
−
300
mA
IFSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
−
1
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
2001 Feb 20
2
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB30
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.2
IF = 0.1 mA
190
220
mV
IF = 1 mA
250
290
mV
IF = 10 mA
320
360
mV
IF = 100 mA
440
500
mV
IF = 200 mA
520
600
mV
IR
continuous reverse current
VR = 25 V; note 1; see Fig.3
−
0.5
μA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.4
−
20
pF
Note
1. Pulse test: pulse width = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
2001 Feb 20
3
VALUE
UNIT
450
K/W
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB30
GRAPHICAL DATA
MLD546
103
handbook, halfpage
MLD547
103
handbook, halfpage
IF
(mA)
IR
(μA)
102
102
(1)
(2)
10
10
(1)
(2)
(3)
1
1
(3)
10−1
0
0.4
0.8
VF (V)
10−1
1.2
0
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MLD548
20
Cd
handbook, halfpage
(pF)
16
12
8
4
0
10
0
20
30
VR (V)
40
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2001 Feb 20
4
20
30
VR (V)
40
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB30
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
2001 Feb 20
REFERENCES
IEC
JEDEC
JEITA
SC-79
5
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
02-12-13
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB30
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Feb 20
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2001 Feb 20
Document order number: 9397 750 07938