Diodes SMD Type Schottky barrier (double) diodes BAT854W;BAT854AW BAT854CW;BAT854SW Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Max Unit Continuous reverse voltage Parameter Symbol VR 40 V Continuous forward current IF 200 mA 300 mA 1 A Repetitive peak forward current IFRM Non-repetitive peak forward current IFSM Storage temperature Tstg Junction temperature Tj Operating ambient temperature Tamb Thermal resistance from junction to ambient Rth j-a Conditions tp 1 s; d Min 0.5 t = 8.3 ms half sinewave;JEDEC method -65 +150 150 -65 +150 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Conditions Typ IF = 0.1 mA 200 IF = 1 mA 260 IF = 10 mA 340 Max Unit mV IF = 30 mA 420 IF = 100 mA 550 Continuous reverse current IR VR = 25 V; Note 1 0.5 A Diode capacitance Cd f = 1 MHz; VR = 1 V 20 pF Note 1. Pulse test: tp 300 s; ä 0.02. Marking Type BTA854W BAT854AW BAT854CW BAT854SW Marking 81 82 83 84 www.kexin.com.cn 1