PMEG4002EB 200 mA very low VF MEGA Schottky barrier rectifier 28 June 2016 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • Forward current: 200 mA Reverse voltage: 40 V Very low forward voltage Ultra small and flat lead SMD plastic package AEC-Q101 qualified 3. Applications • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF Conditions Min Typ Max Unit forward current - - 200 mA VR reverse voltage - - 40 V VF forward voltage - 520 600 mV IF = 200 mA; Tamb = 25 °C 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline 1 1 2 SOD523 [1] The marking bar indicates the cathode. Graphic symbol 2 sym001 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier 6. Ordering information Table 3. Ordering information Type number Package PMEG4002EB Name Description Version SOD523 plastic surface-mounted package; 2 leads SOD523 7. Marking Table 4. Marking codes Type number Marking code PMEG4002EB L9 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VR Conditions Min Max Unit reverse voltage - 40 V IF forward current - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA IFSM non-repetitive peak forward current half sine wave; tp = 8.3 ms - 1 A Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [1][2] Min Typ Max Unit - - 450 K/W - - - For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMEG4002EB Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2/9 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 0.1 mA; Tamb = 25 °C - 190 220 mV IF = 1 mA; Tamb = 25 °C - 250 290 mV IF = 10 mA; Tamb = 25 °C - 320 360 mV IF = 100 mA; Tamb = 25 °C - 440 500 mV IF = 200 mA; Tamb = 25 °C - 520 600 mV IR reverse current VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed; Tamb = 25 °C - - 0.5 µA Cd diode capacitance VR = 1 V; f = 1 MHz; Tamb = 25 °C - 20 - pF mld546 103 mld547 103 IF (mA) IR (µA) 102 102 (1) (2) 10 10 (1) 1 (2) (3) 1 (3) 10- 1 0 0.4 0.8 VF (V) 10- 1 1.2 (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 1. Product data sheet 10 20 30 VR (V) 40 (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Forward current as a function of forward voltage; typical values PMEG4002EB 0 Fig. 2. Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3/9 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier mld548 20 Cd (pF) 16 12 8 4 0 0 10 20 30 VR (V) 40 f = 1 MHz; Tamb = 25 °C Fig. 3. Diode capacitance as a function of reverse voltage; typical values 11. Test information Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 0.85 0.75 0.65 0.58 1 1.65 1.25 1.55 1.15 2 0.34 0.26 0.17 0.11 Dimensions in mm Fig. 4. 02-12-13 Package outline SOD523 PMEG4002EB Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4/9 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier 13. Soldering 2.15 1.4 solder lands solder resist 0.5 0.6 (2×) (2×) 1.2 solder paste occupied area Dimensions in mm 0.4 (2×) 0.5 (2×) Fig. 5. sod523_fr Reflow soldering footprint for SOD523 PMEG4002EB Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5/9 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG4002EB v.3 20160628 Product data sheet - PMEG4002EB v.2 Modifications: • • Section "Features and benefits": added AEC-Q101 qualified Section "Test information": added PMEG4002EB v.2 20100113 Product data sheet - PMEG4002EB v.1 PMEG4002EB v.1 20050712 Product data sheet - - PMEG4002EB Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6/9 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 15. Legal information Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. PMEG4002EB Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7/9 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG4002EB Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8/9 PMEG4002EB NXP Semiconductors 200 mA very low VF MEGA Schottky barrier rectifier 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................1 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 2 10. Characteristics............................................................ 3 11. Test information......................................................... 4 12. Package outline.......................................................... 4 13. Soldering..................................................................... 5 14. Revision history..........................................................6 15. Legal information....................................................... 7 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 June 2016 PMEG4002EB Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9/9