0.2 A very low VF MEGA Schottky barrier rectifier in SOD523 package

PMEG4002EB
200 mA very low VF MEGA Schottky barrier rectifier
28 June 2016
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat
lead Surface Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
Forward current: 200 mA
Reverse voltage: 40 V
Very low forward voltage
Ultra small and flat lead SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF
Conditions
Min
Typ
Max
Unit
forward current
-
-
200
mA
VR
reverse voltage
-
-
40
V
VF
forward voltage
-
520
600
mV
IF = 200 mA; Tamb = 25 °C
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
1
1
2
SOD523
[1]
The marking bar indicates the cathode.
Graphic symbol
2
sym001
PMEG4002EB
NXP Semiconductors
200 mA very low VF MEGA Schottky barrier rectifier
6. Ordering information
Table 3. Ordering information
Type number
Package
PMEG4002EB
Name
Description
Version
SOD523
plastic surface-mounted package; 2 leads
SOD523
7. Marking
Table 4. Marking codes
Type number
Marking code
PMEG4002EB
L9
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VR
Conditions
Min
Max
Unit
reverse voltage
-
40
V
IF
forward current
-
200
mA
IFRM
repetitive peak forward
current
tp ≤ 1 s; δ ≤ 0.5
-
300
mA
IFSM
non-repetitive peak
forward current
half sine wave; tp = 8.3 ms
-
1
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
[1][2]
Min
Typ
Max
Unit
-
-
450
K/W
-
-
-
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a
significant part of the total power losses.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMEG4002EB
Product data sheet
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PMEG4002EB
NXP Semiconductors
200 mA very low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 0.1 mA; Tamb = 25 °C
-
190
220
mV
IF = 1 mA; Tamb = 25 °C
-
250
290
mV
IF = 10 mA; Tamb = 25 °C
-
320
360
mV
IF = 100 mA; Tamb = 25 °C
-
440
500
mV
IF = 200 mA; Tamb = 25 °C
-
520
600
mV
IR
reverse current
VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02 ;
pulsed; Tamb = 25 °C
-
-
0.5
µA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; Tamb = 25 °C
-
20
-
pF
mld546
103
mld547
103
IF
(mA)
IR
(µA)
102
102
(1)
(2)
10
10
(1)
1
(2)
(3)
1
(3)
10- 1
0
0.4
0.8
VF (V)
10- 1
1.2
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 1.
Product data sheet
10
20
30
VR (V)
40
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Forward current as a function of forward
voltage; typical values
PMEG4002EB
0
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
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PMEG4002EB
NXP Semiconductors
200 mA very low VF MEGA Schottky barrier rectifier
mld548
20
Cd
(pF)
16
12
8
4
0
0
10
20
30
VR (V)
40
f = 1 MHz; Tamb = 25 °C
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
0.85
0.75
0.65
0.58
1
1.65 1.25
1.55 1.15
2
0.34
0.26
0.17
0.11
Dimensions in mm
Fig. 4.
02-12-13
Package outline SOD523
PMEG4002EB
Product data sheet
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PMEG4002EB
NXP Semiconductors
200 mA very low VF MEGA Schottky barrier rectifier
13. Soldering
2.15
1.4
solder lands
solder resist
0.5 0.6
(2×) (2×)
1.2
solder paste
occupied area
Dimensions in mm
0.4
(2×)
0.5
(2×)
Fig. 5.
sod523_fr
Reflow soldering footprint for SOD523
PMEG4002EB
Product data sheet
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PMEG4002EB
NXP Semiconductors
200 mA very low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG4002EB v.3
20160628
Product data sheet
-
PMEG4002EB v.2
Modifications:
•
•
Section "Features and benefits": added AEC-Q101 qualified
Section "Test information": added
PMEG4002EB v.2
20100113
Product data sheet
-
PMEG4002EB v.1
PMEG4002EB v.1
20050712
Product data sheet
-
-
PMEG4002EB
Product data sheet
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PMEG4002EB
NXP Semiconductors
200 mA very low VF MEGA Schottky barrier rectifier
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Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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PMEG4002EB
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
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PMEG4002EB
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200 mA very low VF MEGA Schottky barrier rectifier
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PMEG4002EB
NXP Semiconductors
200 mA very low VF MEGA Schottky barrier rectifier
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 2
10. Characteristics............................................................ 3
11. Test information......................................................... 4
12. Package outline.......................................................... 4
13. Soldering..................................................................... 5
14. Revision history..........................................................6
15. Legal information....................................................... 7
©
NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 June 2016
PMEG4002EB
Product data sheet
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