SO D3 23F BAT46WJ Single Schottky barrier diode Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Low forward voltage Reverse voltage VR 100 V Very small and flat lead SMD plastic package Low capacitance AEC-Q101 qualified 1.3 Applications High-speed switching Line termination Voltage clamping Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VR reverse voltage Conditions VF forward voltage IF = 250 mA [1] IR reverse current VR = 75 V [1] [1] Min Typ Max Unit - - 100 V - - 850 mV - - 4 A Pulse test: tp 300 s; 0.02. 2. Pinning information Table 2. Pin Pinning Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 1 2 sym001 [1] The marking bar indicates the cathode. BAT46WJ NXP Semiconductors Single Schottky barrier diode 3. Ordering information Table 3. Ordering information Type number BAT46WJ Package Name Description Version SC-90 plastic surface-mounted package; 2 leads SOD323F 4. Marking Table 4. Marking codes Type number Marking code BAT46WJ JK 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VR reverse voltage IF forward current [1] IFSM non-repetitive peak forward current square wave; tp < 10 ms Ptot total power dissipation Tamb 25 C Min Max Unit - 100 V - 250 mA - 2.5 A [2][4] - 400 mW [3][4] - 715 mW Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1] Tj = 25 C before surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Table 6. Symbol Rth(j-a) BAT46WJ Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 Min Typ Max Unit [1][3] - - 310 K/W [2][3] - - 175 K/W © NXP B.V. 2011. All rights reserved. 2 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode Table 6. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions [4] Min Typ Max Unit - - 35 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Reflow soldering is the only recommended soldering method. [4] Soldering point of cathode tab. 006aac385 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac386 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for cathode 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BAT46WJ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 7. Characteristics Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol VF IR Parameter Conditions Min Typ IF = 0.1 mA - 175 200 mV IF = 10 mA - 315 350 mV IF = 10 mA; Tj = 40 C - - 470 mV IF = 50 mA - 415 475 mV forward voltage IF = 50 mA; Tj = 40 C - - 560 mV - 710 850 mV - 0.2 0.5 A [1] reverse current diode capacitance VR = 1.5 V; Tj = 60 C - - 12 A VR = 10 V - 0.3 0.8 A VR = 10 V; Tj = 60 C - - 20 A VR = 50 V - 0.7 2 A VR = 50 V; Tj = 60 C - - 44 A VR = 75 V - 1 4 A VR = 75 V; Tj = 60 C - - 80 A VR = 100 V - 2 9 A VR = 100 V; Tj = 60 C - - 120 A VR = 100 V; Tj = 85 C - - 600 A - - 39 pF f = 1 MHz VR = 0 V VR = 1 V trr BAT46WJ Product data sheet Unit IF = 250 mA VR = 1.5 V Cd Max [1] reverse recovery time [2] - - 21 pF - 5.9 - ns [1] Pulse test: tp 300 s; 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 006aac387 1 (3) (4) IF (A) 10−1 006aac388 10−2 IR (A) 10−3 (5) (1) 10−4 (1) (2) (2) (3) 10−5 10−2 10−6 (4) (3) (5) (4) 10−7 10−3 10−8 10−4 0.0 (5) 10−9 0.4 0.8 0 1.2 20 VF (V) (1) Tamb = 150 C 60 80 VR (V) 100 (1) Tamb = 125 C (2) Tamb = 125 C (2) Tamb = 85 C (3) Tamb = 85 C (3) Tamb = 60 C (4) Tamb = 25 C (4) Tamb = 25 C (5) Tamb = 40 C (5) Tamb = 40 C Fig 3. 40 Forward current as a function of forward voltage; typical values Fig 4. Reverse current as a function of reverse voltage; typical values 006aac389 35 Cd (pF) 30 25 20 15 10 5 0 0 20 40 60 80 100 VR (V) f = 1 MHz; Tamb = 25 C Fig 5. Diode capacitance as a function of reverse voltage; typical values BAT46WJ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 006aac390 0.25 PR(AV) (W) 006aac391 0.3 (1) IF(AV) (A) 0.20 0.2 (2) 0.15 (1) (2) 0.10 (3) (3) 0.1 (4) (4) 0.05 0.0 0.0 0 20 40 60 80 100 0 25 50 75 100 125 VR (V) Tj = 125 C 150 175 Tamb (°C) FR4 PCB, standard footprint Tj = 150 C (1) = 1 (2) = 0.9 (1) = 1; DC (3) = 0.8 (2) = 0.5; f = 20 kHz (4) = 0.5 (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Fig 6. Average reverse power dissipation as a function of reverse voltage; typical values Fig 7. 006aac392 0.3 (1) IF(AV) (A) 0.2 Average forward current as a function of ambient temperature; typical values 006aac393 0.3 (1) IF(AV) (A) 0.2 (2) (2) (3) 0.1 (3) 0.1 (4) 0.0 (4) 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 C FR4 PCB, mounting pad for cathode 1 cm2 Tj = 150 C (1) = 1; DC (1) = 1; DC (2) = 0.5; f = 20 kHz (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz (4) = 0.1; f = 20 kHz Fig 8. Average forward current as a function of ambient temperature; typical values BAT46WJ Product data sheet Fig 9. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 10. Reverse recovery time test circuit and waveforms P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 11. Duty cycle definition The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are calculated according to the equations: I F AV = I M with IM defined as peak current, I RMS = I F AV at DC, and I RMS = I M with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAT46WJ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 9. Package outline 1.35 1.15 0.80 0.65 0.5 0.3 1 2.7 2.3 1.8 1.6 2 0.25 0.10 0.40 0.25 Dimensions in mm 04-09-13 Fig 12. Package outline SOD323F (SC-90) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAT46WJ [1] Package SOD323F Description Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 14. 11. Soldering 3.05 2.2 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 0.5 (2×) 0.6 (2×) Dimensions in mm sod323f_fr Reflow soldering is the only recommended soldering method. Fig 13. Reflow soldering footprint SOD323F (SC-90) BAT46WJ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAT46WJ v.2 20111108 Product data sheet - BAT46WJ v.1 Modifications: BAT46WJ v.1 BAT46WJ Product data sheet • • • Table 7: unit for reverse current IR at VR = 50 V corrected to A Table 7: conditions of reverse voltage VR corrected Section 13 “Legal information”: updated 20100728 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 - © NXP B.V. 2011. All rights reserved. 9 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BAT46WJ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 10 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAT46WJ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 11 of 12 BAT46WJ NXP Semiconductors Single Schottky barrier diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 November 2011 Document identifier: BAT46WJ