[ /Title (HS508AR H) /Subject (Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection) /Autho r () /Keywords (Harris Corporation, Semiconductor Communications Divi- HS-508ARH CT PRODU ODUCT E T E L R OBSO UTE P STIT B 4 Data Sheet U 2 S 8 LE , FN4 POSSIBHS-508BRH Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection The HS-508ARH is a dielectrically isolated, radiation hardened, CMOS analog multiplexer incorporating an important feature; it withstands analog input voltages much greater than the supplies. This is essential in any system where the analog inputs originate outside the equipment. They can withstand a continuous input up to 10V greater than either supply, which eliminates the possibility of damage when supplies are off, but input signals are present. Equally important, it can withstand brief input transient spikes of several hundred volts; which otherwise would require complex external protection networks. Necessarily, ON resistance is somewhat higher than similar unprotected devices, but very low leakage current combine to produce low errors. Reference Application Notes 520 and 521, available from the Semiconductor Products Division of Intersil, for further information on the HS-508ARH multiplexer in general. December 1999 File Number 4097.2 Features • Electrically Screened to SMD # 5962-96742 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose (γ) . . . . . . . . . . . . . . . . . 1 x 105RAD(Si) - Dielectrically Isolated Device Islands - SEP >110 Mev-mg/cm2Analog/Digital Overvoltage Protection • Fail Safe with Power Loss (No Latchup) • Break-Before-Make Switching • DTL/TTL and CMOS Compatible • Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V • Fast Access Time • Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ) • Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ) The HS-508ARH has been specifically designed to meet exposure to radiation environments. Operation from -55oC to 125oC is guaranteed. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Product Information Detailed Electrical Specifications for these devices are contained in SMD 5962-96742. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/newsafclasst.asp INTERNAL MKT. NUMBER PRODUCT NUMBER TEMP. RANGE (oC) 5962R9674201QEC HS1-508ARH-8 -55 to 125 5962R9674201QXC HS9-508ARH-8 -55 to 125 5962R9674201VEC HS1-508ARH-Q -55 to 125 5962R9674201VXC HS9-508ARH-Q -55 to 125 HS1-508ARH/PROTO HS1-508ARH/PROTO -55 to 125 HS9-508ARH/PROTO HS9-508ARH/PROTO -55 to 125 Pinouts HS1-508ARH 16 LEAD SIDEBRAZE DIP MIL-STD-1835, CDIP2-T16 TOP VIEW AO 1 EN 2 16 A1 A0 1 16 A1 15 A2 EN 2 15 A2 -VSUP 3 14 GND IN1 4 13 +VSUP IN2 5 12 IN5 14 GND -VSUP 3 HS9-508ARH 16 LEAD FLATPACK MIL-STD-1835, CDFP4-F16 TOP VIEW IN 1 4 13 +VSUP IN 2 5 12 IN 5 IN3 6 11 IN6 IN 3 6 11 IN 6 IN4 7 10 IN7 IN 4 7 10 IN 7 OUT 8 9 IN8 OUT 8 9 IN 8 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-508ARH Functional Diagram P A0 IN 1 N 1 DIGITAL ADDRESS A1 OUT A2 8 EN P ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS N IN 8 MULTIPLEX SWITCHES TRUTH TABLE A2 A1 A0 EN ‘‘ON’’ CHANNEL X X X L NONE L L L H 1 L L H H 2 L H L H 3 L H H H 4 H L L H 5 H L H H 6 H H L H 7 H H H H 8 2 HS-508ARH Schematic Diagrams V+ R9 TTL REFERENCE CIRCUIT R10 Q1 Q4 D3 LEVEL SHIFTER V+ LEVEL SHIFTED ADDRESS TO DECODE R2 OVERVOLTAGE PROTECTION R5 R7 R6 R8 V+ R3 ADD IN. LEVEL SHIFTED ADDRESS TO DECODE R4 D2 R1 200Ω D1 VV- FIGURE 1. ADDRESS INPUT BUFFER AND LEVEL SHIFTER FROM DECODE +V OVERVOLTAGE PROTECTION V+ Q5 A0 OR A0 1K A1 OR A1 D5 D7 R11 IN OUT D4 D6 Q6 A2 OR A2 V ENABLE VTO N-CHANNEL DEVICE OF THE SWITCH PAIR TO P-CHANNEL DEVICE OF THE SWITCH PAIR FIGURE 2. ADDRESS DECODER 3 FROM DECODE FIGURE 3. MULTIPLEX SWITCH HS-508ARH Die Characteristics DIE DIMENSIONS: Backside Finish: 83 mils x 108 mils x 19 mils Silicon INTERFACE MATERIALS: ASSEMBLY RELATED INFORMATION: Glassivation: Substrate Potential: Type: SiO2 Thickness: 8kÅ ±1kÅ Unbiased (DI) ADDITIONAL INFORMATION: Top Metallization: Worst Case Current Density: Type: AlCu Thickness: 12.5kÅ ±2kÅ 6.68e04 A/cm2 Transistor Count: Substrate: 506 CMOS Dielectric Isolation Metallization Mask Layout HS-508ARH IN2 IN1 -V IN3 IN4 EN OUT A0 A1 IN8 IN7 A2 IN6 IN5 +V GND All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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