Application Note High current PROFET™ BT S50 060 -1T EA E xa mpl e f or e xter na l c irc uit r y Applic atio n N ote V1.1 2014-01-29 Aut o moti ve P ow er BTS50060-1TEA Revision History BTS50060-1TEA Revision History: V1.1, 2014-01-29 Previous Version: V1.0, 2013-07-19 Page Subjects (major changes since last revision) 6, 7, 9 Table 4, Table 5, Table 6: BCR133S replaced by BCR10PN Application Note 2 V1.1, 2014-01-29 BTS50060-1TEA Table of Contents Table of Contents 1 Abstract ............................................................................................................................................... 4 2 Introduction ........................................................................................................................................ 4 3 Basic circuitry..................................................................................................................................... 4 4 Circuitry for applications requiring accurate load current sensing ............................................. 5 5 Circuitry for applications sensitive to shift of voltage levels / increased RF robustness of IS signal ................................................................................................................................................... 5 6 Circuitry with “open load at OFF” detection ................................................................................... 6 7 Summary of circuitry for single device ............................................................................................ 7 8 Multiple devices.................................................................................................................................. 8 9 Conclusion ........................................................................................................................................ 10 10 Additional Information ..................................................................................................................... 10 Application Note 3 V1.1, 2014-01-29 BTS50060-1TEA Abstract 1 Abstract Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. This application note is intended to give examples for external circuitry for using Infineon® product BTS500601TEA. 2 Introduction Within high current PROFET™ product family, Infineon® offers the BTS50060-1TEA, which is a 6mOhm single channel smart high-side switch. With it’s unique feature set, it serves a wide range of automotive heating applications, such as driver for glow plugs, PTC heater, or urea heater. In this application note, the following abbreviations and symbols are used: BOM : bill of material DI/O : digital output pin of a microcontroller ADC : ADC input pin of a microcontroller; ADC = analog-to-digital converter RF : radio frequency 3 Basic circuitry Using circuitry as shown in Figure 1 supports basic functionality of BTS50060-1TEA. Figure 1 Example for using BTS50060-1TEA basic circuitry Application Note 4 V1.1, 2014-01-29 BTS50060-1TEA Circuitry for applications requiring accurate load current sensing Table 1 BOM single device basic circuitry Symbol Value Count Comment IC1 BTS50060-1TEA 1 Smart High-side switch Microcontroller e.g. TLE9832 1 - R_Input 10k 1 - R_sense 10k 1 - R_IS 1k 1 - C_Vbat 100nF 1 - C_OUT 10nF 1 - X Power connectors 3 - Power Load e.g. Diesel glow plug 1 Loads to be driven 4 Circuitry for applications requiring accurate load current sensing The ADVANCED SENSE feature of BTS50060-1TEA allows accurate sensing of the load current. To support this accuracy under severe RF disturbances, it may be necessary to include a resistor R_GND (100R) in the connection for pin 1 of BTS50060-1TEA. See Figure 2. This may cause a shift of voltage at the GND pin, which influences voltage levels and hysteresis behavior for undervoltage lock-off, input voltage thresholds, open load at off detection. Note: All parameters in datasheet are given only in respect to device pins (if not mentioned differently). Voltage drops on external components are not covered by the device specification. Figure 2 Example for using BTS50060-1TEA basic circuitry with R_GND Table 2 Change to BOM for robust IS signal Symbol Value Count Comment R_GND 100 Ohm 1 - 5 Circuitry for applications sensitive to shift of voltage levels / increased RF robustness of IS signal The voltage drop across R_GND causes a shift of the voltage levels of the device, such as undervoltage threshold, input threshold, or open load at OFF threshold. For applications which are sensitive to a shift of these Application Note 5 V1.1, 2014-01-29 BTS50060-1TEA Circuitry with “open load at OFF” detection thresholds, it may be necessary to replace R_GND by a chip ferrite L_GND. This will further increase the robustness of IS signal against RF disturbances, especially at low load currents. See Figure 3 for example. Figure 3 Table 3 Example for using BTS50060-1TEA circuitry with chip ferrite Change to BOM for chip ferrite Symbol Value Count Comment R_GND 100 Ohm 0 Replaced by L_GND L_GND e.g. WE 74279205 1 1k@100MHz 6 Circuitry with “open load at OFF” detection BTS50060-1TEA offers easy implementation of diagnosing open loat at OFF (e.g.: detecting broken load wire without activating BTS50060-1TEA). An example for such implementation can be found in Figure 4. This circuitry would allow short-to-battery as well as open load detection in OFF state. Table 4 Change to BOM for “open load at OFF” detection Symbol Value Count Comment T1 NPN bias transistor, e.g. TR1 of BCR10PN PNP bias transistor, e.g. TR2 of BCR10PN 10k 1 - 1 - T2 RL_OL Application Note 6 V1.1, 2014-01-29 BTS50060-1TEA Summary of circuitry for single device 7 Summary of circuitry for single device Figure 4 Example for using BTS50060-1TEA, summarizing above circuitry Table 5 BOM single device Symbol Value Count Comment IC1 BTS50060-1TEA 1 Smart High-side switch Microcontroller e.g. TLE9832 1 - R_Input 10k 1 - R_sense 10k 1 - R_IS 1k 1 - R_GND 100 Ohm 1 - C_Vbat 100nF 1 - C_OUT 10nF 1 - X Power connectors 3 - Power Load e.g. Diesel glow plug 1 Loads to be driven T1 NPN bias transistor, e.g. TR1 of BCR10PN PNP bias transistor, e.g. TR2 of BCR10PN 1 For open load detection 10k 1 For open load detection T2 RL_OL Application Note 7 V1.1, 2014-01-29 BTS50060-1TEA Multiple devices 8 Multiple devices Using multiple BTS50060-1TEA for independent outputs on a single board, some parts of the circuitry may be necessary only one time, saving components and microcontroller pins. An example for using 2 units BTS500601TEA, with open load detection, can be found in Figure 5. Figure 5 Example for using two BTS50060-1TEA, re-using circuitry and microcontroller pins Application Note 8 V1.1, 2014-01-29 BTS50060-1TEA Multiple devices Table 6 BOM for two devices, including “open load at OFF” detection Symbol Value Count Comment IC1 BTS50060-1TEA 2 Smart High-side switch Microcontroller e.g. TLE9832 1 - R_Input 10k 2 - R_sense 10k 2 - R_IS 1k 2 - R_GND 100 Ohm 2 - C_Vbat 100nF 1 - C_OUT 10nF 1 - X Power connectors 4 - Power Load e.g. Diesel glow plug 2 Loads to be driven T1 NPN bias transistor, e.g. TR1 of BCR10PN 1 For open load detection T2 RL_OL PNP bias transistor, e.g. TR2 of BCR10PN 10k 2 For “open load at OFF” D1 e.g. BAW56 1 For “open load at OFF”; double diode with common anode As shown in Figure 6, instead of using a separate R_GND for each BTS50060-1TEA, using one common L_GND for multiple BTS50060-1TEA may reduce the number of device count on board. Care has to be taken in board layout to avoid RF coupling from BTS50060-1TEA pin 1 (GND) to module board, bypassing L_GND. Using single R_GND for multiple BTS50060-1TEA is not recommended because of voltage drop across R_GND. Figure 6 Example for using two BTS50060-1TEA, re-using circuitry and microcontroller pins, with single L_GND Application Note 9 V1.1, 2014-01-29 BTS50060-1TEA Conclusion Table 7 Change to BOM for two devices when using single L_GND Symbol Value Count Comment R_GND 100 Ohm 0 Replaced by L_GND L_GND e.g. WE 74279205 1 1k@100MHz 9 Conclusion The high current PROFET™ BTS50060-1TEA from Infineon® is a smart high-side switch. It offers the high driving capability of a 6mOhm switch in a DPak package with a high number of protection and diagnostic features. It supports high feature set and low count of external components, for a high variety of applications. Examples of how to make use of that in application design were given in this application note. 10 Additional Information Data sheet of BTS50060-1TEA can be found at http://www.infineon.com/PROFET More information on ADVANCED SENSE feature can be found in the application note “ADVANCED SENSE calibration and benefits guide” available at document section of http://www.infineon.com/PROFET For further information you may contact http://www.infineon.com Application Note 10 V1.1, 2014-01-29 Edition 2014-01-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. 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