DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2010AEB 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package Product data sheet 2003 Dec 03 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package FEATURES PMEG2010AEB QUICK REFERENCE DATA • Forward current: 1.0 A SYMBOL • Reverse voltage: 20 V IF forward current 1 A VR reverse voltage 20 V • Ultra low forward voltage PARAMETER MAX. UNIT • Ultra small SMD package. PINNING APPLICATIONS PIN • Low voltage rectification • High efficiency DC/DC conversion • Voltage clamping DESCRIPTION 1 cathode 2 anode • Inverse-polarity protection • Low power consumption applications. 1 2 DESCRIPTION Top view Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. col001 Marking code: L6. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523; SC-79) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME − PMEG2010AEB DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD523 RELATED PRODUCTS TYPE DESCRIPTION FEATURE PMEG2005EB 0.5 A; 20 V very low VF MEGA Schottky rectifier Lower IR in same package PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier 2003 Dec 03 2 Lower forward current, lower IR SOD323 (SC76) NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 20 V Ts ≤ 55 °C − 1.0 A repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5 − 3.5 A non-repetitive peak forward current t = 8 ms square wave − 6 A −65 +150 °C note 1 − 150 °C note 1 −65 +150 °C VR continuous reverse voltage IF continuous forward current IFRM IFSM Tstg storage temperature Tj junction temperature Tamb operating ambient temperature Note 1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air; notes 1 and 2 400 K/W Rth(j-s) thermal resistance from junction to soldering point notes 2 and 3 75 K/W Notes 1. Refer to SOD523 (SC-79) standard mounting conditions. 2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Solder point of cathode tab. 2003 Dec 03 3 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage IR continuous reverse current Cd diode capacitance CONDITIONS MAX. UNIT IF = 0.1 mA 30 60 mV IF = 1 mA 80 110 mV IF = 10 mA 140 190 mV IF = 100 mA 230 290 mV IF = 1 000 mA 510 620 mV VR = 10 V; note 1 0.17 0.6 mA VR = 20 V; note 1 0.32 1.5 mA VR = 1 V; f = 1 MHz 19 25 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2003 Dec 03 TYP. 4 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB GRAPHICAL DATA com001 103 MLE228 5 10halfpage handbook, I R (μA) 104 IF (mA) (1) 102 103 (2) (1) (2) (3) 102 10 10 1 (3) 1 10−1 10−1 0 0.2 0.4 0.6 0 0.8 8 VF (V) (1) Tamb = 85 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. (1) Tamb = 85 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. com002 30 Cd (pF) 25 20 15 10 5 0 0 5 10 15 20 VR (V) f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Dec 03 5 16 VR (V) 24 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523V A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523V 2003 Dec 03 REFERENCES IEC JEDEC JEITA SC-79 6 EUROPEAN PROJECTION ISSUE DATE 00-12-07 02-04-19 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Dec 03 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp8 Date of release: 2003 Dec 03 Document order number: 9397 750 11911