DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 PMEG2020AEA 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package Product data sheet 2004 Feb 26 NXP Semiconductors Product data sheet 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package FEATURES PMEG2020AEA QUICK REFERENCE DATA • Forward current: 2 A SYMBOL • Reverse voltage: 20 V IF forward current 2 A VR reverse voltage 20 V • Very low forward voltage PARAMETER VALUE UNIT • Very small SMD package. PINNING APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Switch mode power supply PIN DESCRIPTION 1 cathode 2 anode • Inverse polarity protection • Low power consumption applications. 1 DESCRIPTION 2 Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. MHC682 The marking bar indicates the cathode. MARKING TYPE NUMBER Fig.1 MARKING CODE PMEG2020AEA Simplified outline (SOD323; SC-76) and symbol. S3 RELATED PRODUCTS TYPE NUMBER DESCRIPTION FEATURES PMEG1020EA 2 A; 10 V ultra low VF MEGA Schottky barrier rectifier SOD323 package; lower reverse voltage; lower forward voltage PMEG2010EA 1 A; 20 V ultra low VF MEGA Schottky barrier rectifier SOD323 package; lower forward current; lower reverse current and diode capacitance ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEG2020AEA 2004 Feb 26 − DESCRIPTION plastic surface mounted package; 2 leads 2 VERSION SOD323 NXP Semiconductors Product data sheet 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package PMEG2020AEA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 20 V Tsp ≤ 55 °C − 2 A repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 − 7 A non-repetitive peak forward current t = 8 ms square wave − 9 A storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C VR continuous reverse voltage IF continuous forward current IFRM IFSM Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient notes 1 and 2 450 K/W Rth(j-a) thermal resistance from junction to ambient notes 2 and 3 210 K/W Rth(j-s) thermal resistance from junction to solder point note 4 90 K/W Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. 3. Device mounted on a on an FR4 printed-circuit board with copper clad 10 x 10 mm. 4. Soldering point of cathode tab. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS MAX. UNIT see Fig.2; note 1 IF = 0.01 A 200 220 mV IF = 0.1 A 265 290 mV IF = 1 A 380 430 mV IF = 2 A 450 525 mV VR = 5 V; see Fig.3 15 50 μA VR = 10 V 20 80 μA VR = 20 V 50 200 μA VR = 5 V; f = 1 MHz; see Fig.4 55 70 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Feb 26 TYP. 3 NXP Semiconductors Product data sheet 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package PMEG2020AEA GRAPHICAL DATA MDB825 102 handbook, halfpage MDB823 104 handbook, halfpage IR (mA) IF (mA) (1) 10 103 (1) 102 (2) (3) (4) (2) 1 10−1 10 (3) 10−2 1 10−1 (1) (2) (3) (4) 10−3 0 0.1 0.2 0.3 0.4 VF (V) 0.5 Tamb = 125 °C. Tamb = 85 °C. Tamb = 25 °C. Tamb = −40 °C. Fig.2 10−4 (4) 10−5 Forward current as a function of forward voltage; typical values. 0 (1) (2) (3) (4) MDB824 200 5 10 15 VR (V) 20 Tamb = 125 °C. Tamb = 85 °C. Tamb = 25 °C. Tamb = −40 °C. handbook, halfpage Cd (pF) Fig.3 150 100 50 0 0 5 10 15 V (V) 20 R f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2004 Feb 26 4 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package PMEG2020AEA PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Feb 26 REFERENCES IEC JEDEC JEITA SC-76 5 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 NXP Semiconductors Product data sheet 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package PMEG2020AEA DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Feb 26 Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp7 Date of release: 2004 Feb 26 Document order number: 9397 750 11976