DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low VF MEGA Schottky barrier rectifiers Product data sheet 2003 Aug 20 NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV FEATURES QUICK REFERENCE DATA • Very low forward voltage SYMBOL • High surge current IF forward current VR reverse voltage • Ultra small plastic SMD package. PARAMETER MAX. UNIT 0.5 A PMEG2005AEV 20 V APPLICATIONS PMEG3005AEV 30 V • Low voltage rectification PMEG4005AEV 40 V • High efficiency DC/DC conversion • Voltage clamping PINNING • Inverse polarity protection PIN • Low power consumption applications. DESCRIPTION 1 cathode 2 cathode DESCRIPTION 3 anode Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package. 4 anode 5 cathode 6 cathode handbook, halfpage 6 5 4 1, 2 5, 6 3, 4 MHC310 1 Fig.1 2 3 Simplified outline (SOT666 and symbol). MARKING TYPE NUMBER MARKING CODE PMEG2005AEV G1 PMEG3005AEV G2 PMEG4005AEV G3 RELATED PRODUCTS TYPE NUMBER DESCRIPTION FEATURE PMEGxx05AEA 0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier SOD323 (SC-76) package PMEG2005EB 0.5 A; 20 V very low VF MEGA Schottky rectifier SOD523 (SC-79) package PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier higher forward current 2003 Aug 20 2 NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage PMEG2005AEV − 20 V PMEG3005AEV − 30 V PMEG4005AEV − 40 V IF continuous forward current note 1 − 0.5 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A IFSM non-repetitive peak forward current tp = 8 ms; square wave; note 2 − 10 A Tj junction temperature note 3 − 150 °C Tamb operating ambient temperature note 3 −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Refer to SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel. 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses (PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to ambient in free air; notes 1 and 2 405 K/W in free air; notes 2 and 3 215 K/W thermal resistance from junction to soldering point note 4 80 K/W Notes 1. Refer to SOT666 standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. 2003 Aug 20 3 NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. PMEG2005AEV PMEG3005AEV PMEG4005AEV SYMBOL PARAMETER CONDITIONS UNIT TYP. VF IR Cd forward voltage continuous reverse current diode capacitance TYP. MAX. TYP. MAX. IF = 0.1 mA 90 130 90 130 95 130 mV IF = 1 mA 150 190 150 200 155 210 mV IF = 10 mA 210 240 215 250 220 270 mV IF = 100 mA 280 330 285 340 295 350 mV IF = 500 mA 355 390 380 430 420 470 mV VR = 10 V; note 1 15 40 12 30 7 20 μA VR = 20 V; note 1 40 200 − − − − μA VR = 30 V; note 1 − − 40 150 − − μA VR = 40 V; note 1 − − − − 30 100 μA VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2003 Aug 20 MAX. 4 NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV GRAPHICAL DATA MDB675 103 handbook, halfpage MDB676 105 handbook, halfpage IR (μA) IF (mA) (1) 104 102 (1) (2) 103 (3) (2) 10 102 1 (3) 10 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 PMEG2005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 MDB677 150 handbook, halfpage Cd (pF) 100 50 0 5 10 15 VR (V) 20 PMEG2005AEV f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 15 VR (V) 20 PMEG2005AEV (1) Tamb = 150 °C. Forward current as a function of forward voltage; typical values. 0 10 5 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV MDB672 103 handbook, halfpage MDB673 105 handbook, halfpage IR (μA) IF (mA) (1) 104 102 (1) (2) 103 (3) (2) 10 102 1 (3) 10 10−1 0 0.2 0.4 VF (V) 1 0.6 0 10 PMEG3005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG3005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.5 Fig.6 Forward current as a function of forward voltage; typical values. MDB674 120 handbook, halfpage Cd (pF) 80 40 0 0 5 10 15 20 VR (V) PMEG3005AEV f = 1 MHz; Tamb = 25 °C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 6 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV MDB669 103 handbook, halfpage MDB670 105 handbook, halfpage IR (μA) IF (mA) (1) 104 102 (1) (2) 103 (3) (2) 10 102 1 10 10−1 0 0.2 0.4 VF (V) (3) 1 0.6 0 10 PMEG4005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG4005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.8 Fig.9 Forward current as a function of forward voltage; typical values. MDB671 100 Cd (pF) handbook, halfpage 80 60 40 20 0 0 5 10 15 VR (V) 20 PMEG4005AEV f = 1 MHz; Tamb = 25 °C. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 7 20 30 VR (V) 40 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2003 Aug 20 EUROPEAN PROJECTION 8 NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Aug 20 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp10 Date of release: 2003 Aug 20 Document order number: 9397 750 11687