DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low VF MEGA Schottky barrier rectifiers Product specification 2003 Aug 20 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV FEATURES QUICK REFERENCE DATA • Very low forward voltage SYMBOL • High surge current • Ultra small plastic SMD package. PARAMETER IF forward current VR reverse voltage MAX. UNIT 0.5 A PMEG2005AEV 20 V APPLICATIONS PMEG3005AEV 30 V • Low voltage rectification PMEG4005AEV 40 V • High efficiency DC/DC conversion • Voltage clamping PINNING • Inverse polarity protection PIN • Low power consumption applications. DESCRIPTION 1 cathode 2 cathode DESCRIPTION 3 anode Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package. 4 anode 5 cathode 6 cathode handbook, halfpage 6 5 4 1, 2 5, 6 3, 4 MHC310 1 Fig.1 2 3 Simplified outline (SOT666 and symbol). MARKING TYPE NUMBER MARKING CODE PMEG2005AEV G1 PMEG3005AEV G2 PMEG4005AEV G3 RELATED PRODUCTS TYPE NUMBER DESCRIPTION FEATURE PMEGxx05AEA 0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier SOD323 (SC-76) package PMEG2005EB 0.5 A; 20 V very low VF MEGA Schottky rectifier SOD523 (SC-79) package PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier higher forward current 2003 Aug 20 2 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage PMEG2005AEV − 20 V PMEG3005AEV − 30 V PMEG4005AEV − 40 V IF continuous forward current note 1 − 0.5 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A IFSM non-repetitive peak forward current tp = 8 ms; square wave; note 2 − 10 A Tj junction temperature note 3 − 150 °C Tamb operating ambient temperature note 3 −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Refer to SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel. 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses (PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to ambient in free air; notes 1 and 2 405 K/W in free air; notes 2 and 3 215 K/W thermal resistance from junction to soldering point note 4 80 K/W Notes 1. Refer to SOT666 standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. 2003 Aug 20 3 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. PMEG2005AEV PMEG3005AEV PMEG4005AEV SYMBOL PARAMETER CONDITIONS UNIT TYP. VF IR Cd forward voltage continuous reverse current diode capacitance TYP. MAX. TYP. MAX. IF = 0.1 mA 90 130 90 130 95 130 mV IF = 1 mA 150 190 150 200 155 210 mV IF = 10 mA 210 240 215 250 220 270 mV IF = 100 mA 280 330 285 340 295 350 mV IF = 500 mA 355 390 380 430 420 470 mV VR = 10 V; note 1 15 40 12 30 7 20 µA VR = 20 V; note 1 40 200 − − − − µA VR = 30 V; note 1 − − 40 150 − − µA VR = 40 V; note 1 − − − − 30 100 µA VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Aug 20 MAX. 4 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV GRAPHICAL DATA MDB675 103 handbook, halfpage MDB676 105 handbook, halfpage IR (µA) IF (mA) (1) 104 102 (1) (2) 103 (3) (2) 10 102 1 (3) 10 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 PMEG2005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG2005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MDB677 150 handbook, halfpage Cd (pF) 100 50 0 0 5 10 15 VR (V) 20 PMEG2005AEV f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 5 10 15 VR (V) 20 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV MDB672 103 handbook, halfpage MDB673 105 handbook, halfpage IR (µA) IF (mA) (1) 104 102 (1) (2) 103 (3) (2) 10 102 1 (3) 10 10−1 0 0.2 0.4 VF (V) 1 0.6 0 10 PMEG3005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG3005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.5 Fig.6 Forward current as a function of forward voltage; typical values. MDB674 120 handbook, halfpage Cd (pF) 80 40 0 0 5 10 15 20 VR (V) PMEG3005AEV f = 1 MHz; Tamb = 25 °C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 6 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV MDB669 103 handbook, halfpage MDB670 105 handbook, halfpage IR (µA) IF (mA) (1) 104 102 (1) (2) 103 (3) (2) 10 102 1 10 10−1 0 0.2 0.4 VF (V) (3) 1 0.6 0 10 PMEG4005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG4005AEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.8 Fig.9 Forward current as a function of forward voltage; typical values. MDB671 100 Cd (pF) handbook, halfpage 80 60 40 20 0 0 5 10 15 VR (V) 20 PMEG4005AEV f = 1 MHz; Tamb = 25 °C. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 7 20 30 VR (V) 40 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2003 Aug 20 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Aug 20 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp10 Date of release: 2003 Aug 20 Document order number: 9397 750 11687