AON7440 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 50A RDS(ON) (at VGS=10V) < 2.8mΩ RDS(ON) (at VGS = 4.5V) < 3.6mΩ 100% UIS Tested 100% Rg Tested • Load switch and Li-ion battery charging/discharging switch Top View DFN 3.3x3.3 EP Bottom View D Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.1.0: August 2014 Steady-State Steady-State A 23 IAR, IAS 50 A EAR, EAS 125 mJ 42 PD W 17 4.2 RθJA RθJC www.aosmd.com W 2.7 TJ, TSTG Symbol t ≤ 10s A 28 PDSM TA=70°C V 220 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 25 50 2.4 °C Max 30 60 3 Units °C/W °C/W °C/W Page 1 of 6 AON7440 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 1.7 V 2.8 4.6 3.6 mΩ 1 V 50 A 0.7 Diode Forward Voltage nA 2.3 2.3 100 Forward Transconductance VSD 100 3.8 2.9 gFS Coss 1.7 VGS=4.5V, ID=20A VDS=5V, ID=20A µA 5 1.1 Units V 1 TJ=55°C VGS(th) Max mΩ S 2820 pF 410 pF 280 pF 3.5 5 Ω 54 75 nC 25 35 nC 6.5 nC Qgd Gate Drain Charge 12.5 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 10 ns 58 ns tf Turn-Off Fall Time 20 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 15.5 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 31.5 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2014 www.aosmd.com Page 2 of 6 AON7440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 4.5V VDS=5V 3.5V 120 120 6V,10V 3V 90 125°C ID(A) ID (A) 90 60 60 30 30 VGS=2.5V 25°C 0 0 1 2 3 4 0 5 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 2 VGS=4.5V RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4 3 2 VGS=10V 1 1.8 VGS=10V ID=20A 1.6 17 5 2 10 =4.5V 1.4 1.2 VGS ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 8 ID=20A 7 1.0E+01 40 1.0E+00 6 125°C 5 IS (A) RDS(ON) (mΩ) 2 4 3 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 25°C 1 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: August 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=15V ID=20A 8 3500 Ciss Capacitance (pF) VGS (Volts) 3000 6 4 2500 2000 1500 1000 2 Coss 500 0 Crss 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 400 1000.0 350 10µs RDS(ON) limited 10.0 DC 1.0 10µs 300 100µs 1ms 10ms 250 0.0 0.01 TJ(Max)=150°C TC=25°C 200 150 100 TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 100.0 50 0.1 1 10 0 0.00001 0.0001 100 VDS (Volts) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 30 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3°C/W 1 0.1 PD Single Pulse 0.01 0.00001 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2014 www.aosmd.com Page 4 of 6 AON7440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 40 30 20 10 TA=125°C 0 10 1 10 100 0 1000 25 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 125 150 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 30 20 100 10 10 0 0 25 50 75 100 125 150 1 0.00001 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 40 0.1 0.01 PD 0.001 0.0001 0.0001 Single Pulse 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: August 2014 www.aosmd.com Page 5 of 6 AON7440 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6