Datasheet

AON7440
30V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power technology
• Low RDS(ON)
• High Current Capability
• RoHS and Halogen-Free Compliant
Applications
ID (at VGS=10V)
30V
50A
RDS(ON) (at VGS=10V)
< 2.8mΩ
RDS(ON) (at VGS = 4.5V)
< 3.6mΩ
100% UIS Tested
100% Rg Tested
• Load switch and Li-ion battery charging/discharging switch
Top View
DFN 3.3x3.3 EP
Bottom View
D
Top View
Pin 1
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH C
TC=25°C
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev.1.0: August 2014
Steady-State
Steady-State
A
23
IAR, IAS
50
A
EAR, EAS
125
mJ
42
PD
W
17
4.2
RθJA
RθJC
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W
2.7
TJ, TSTG
Symbol
t ≤ 10s
A
28
PDSM
TA=70°C
V
220
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Maximum
30
-55 to 150
Typ
25
50
2.4
°C
Max
30
60
3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7440
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
1.7
V
2.8
4.6
3.6
mΩ
1
V
50
A
0.7
Diode Forward Voltage
nA
2.3
2.3
100
Forward Transconductance
VSD
100
3.8
2.9
gFS
Coss
1.7
VGS=4.5V, ID=20A
VDS=5V, ID=20A
µA
5
1.1
Units
V
1
TJ=55°C
VGS(th)
Max
mΩ
S
2820
pF
410
pF
280
pF
3.5
5
Ω
54
75
nC
25
35
nC
6.5
nC
Qgd
Gate Drain Charge
12.5
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
10
ns
58
ns
tf
Turn-Off Fall Time
20
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
15.5
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
31.5
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2014
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Page 2 of 6
AON7440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
4.5V
VDS=5V
3.5V
120
120
6V,10V
3V
90
125°C
ID(A)
ID (A)
90
60
60
30
30
VGS=2.5V
25°C
0
0
1
2
3
4
0
5
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
Normalized On-Resistance
2
VGS=4.5V
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
3
2
VGS=10V
1
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=4.5V
1.4
1.2
VGS
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
8
ID=20A
7
1.0E+01
40
1.0E+00
6
125°C
5
IS (A)
RDS(ON) (mΩ)
2
4
3
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
2
1.0E-04
25°C
1
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=15V
ID=20A
8
3500
Ciss
Capacitance (pF)
VGS (Volts)
3000
6
4
2500
2000
1500
1000
2
Coss
500
0
Crss
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
400
1000.0
350
10µs
RDS(ON)
limited
10.0
DC
1.0
10µs
300
100µs
1ms
10ms
250
0.0
0.01
TJ(Max)=150°C
TC=25°C
200
150
100
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
100.0
50
0.1
1
10
0
0.00001 0.0001
100
VDS (Volts)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
30
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3°C/W
1
0.1
PD
Single Pulse
0.01
0.00001
0.0001
Ton
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2014
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Page 4 of 6
AON7440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
40
30
20
10
TA=125°C
0
10
1
10
100
0
1000
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
75
125
150
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
30
20
100
10
10
0
0
25
50
75
100
125
150
1
0.00001
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
1
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
40
0.1
0.01
PD
0.001
0.0001
0.0001
Single Pulse
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: August 2014
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Page 5 of 6
AON7440
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: August 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6