SSF5508D
Preliminary
Main Product Characteristics
VDSS
60V（Typ）
RDS(on)
3.8mohm（Typ）
ID
110A
Features and Benefits
SSF5508D Top View (DPAK)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
150℃ operating temperature
High Avalanche capability and 100% tested
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
110
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
80
IDM
Pulsed Drain Current②
440
ISM
Pulsed Source Current.(Body Diode)
400
Power Dissipation③
170
W
Linear derating factor
2
W/ Cْ
VDS
Drain-Source Voltage
55
V
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak diode recovery voltage
35
v/ns
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
735
mJ
IAR
Avalanche Current @ L=0.3mH②
65
A
-55 to + 150
°C
PD @TC = 25°C
Operating Junction and Storage Temperature
TJ TSTG
Range
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
0.73
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
50
℃/W
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Page 1 of 6
Rev.1.0
SSF5508D
Preliminary
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source breakdown
voltage
RDS(on)
Static Drain-to-Source
IDSS
Typ.
55
60
—
on-resistance
VGS(th)
Min.
Gate threshold voltage
—
current
Units
—
V
3.8
5
mΩ
3
4
V
2
Drain-to-Source leakage
Max
—
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 20A
VDS = VGS,
ID = 250μA
VDS = 55V,
1
VGS = 0V
μA
—
Conditions
10
VDS = 55V,
VGS = 0V,
TJ = 150°C
IGSS
Gate-to-Source forward
—
—
-100
—
100
leakage
Gate-to-Source reverse
VGS =20V
nA
—
leakage
VGS = -20V
Qg
Total gate charge
—
124.77
120
Qgs
Gate-to-Source charge
—
24.46
30
Qgd
Gate-to-Drain("Miller") charge
—
48.68
30
Qg(th)
Gate charge at shreshold
—
16
20
Vplateau
gate plateau voltage
—
4.7
6
td(on)
Turn-on delay time
—
19.62
—
tr
Rise time
—
18.82
—
td(off)
Turn-Off delay time
—
69.76
—
tf
Fall time
—
30.12
—
VGS=10V
Ciss
Input capacitance
—
5607
—
VGS = 0V,
Coss
Output capacitance
—
463
—
Crss
Reverse transfer capacitance
—
454
—
nC
ID=30A
VDD=30V
VGS=10V
V
VDD=30V
ns
pF
ID=2A ,RL=15Ω
RG=2.5Ω
VDS = 25V,
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
IS
Maximum Body-Diode
Min.
Continuous Current
Typ.
Max
Units
110
—
A
Conditions
VSD
Diode Forward Voltage
—
0.77
1
V
IS=40A, VGS=0V
trr
Reverse Recovery Time
—
36
—
ns
TJ = 25°C, IF =68A, ,
Qrr
Reverse Recovery Charge
—
57
—
nC
di/dt = 100A/μs
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
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Page 2 of 6
Rev.1.0
SSF5508D
Preliminary
Typical Electrical and Thermal Characteristics
10V
90
6V
ID,drain to source current(A)
100
5V
7V
ID,drain current(A)
80
4.5V
70
60
50
4V
40
30
3.5V
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS,drain to source voltage(V)
4
4.5
Rdson,Drain-to-Source On Resistance(Normalized)
Rd son, Drai n-to -Sou rce On
R esis tanc e(No rmal ize d)
VGS=10V
3
15
60
50
40
30
125℃
20
25℃
10
0
Figure 2: Typical Transfer Characteristics
4
10
70
VGS,gate to source voltage(V)
VGS=7V
5
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Figure 1: Typical Output Characteristics
0
VDS=VGS
90
5
6
5
100
20
25
30
1.7
1.6
1.5
1.4
VGS=10V
1.3
ID=20A
1.2
1.1
VGS=7V
1
ID=20A
0.9
0.8
0
25
75
1 00
125
1 50
175
20 0
Tj, Jun cti on Tem per atu re( °C)
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction
Gate Voltage
Temperature
25
1.E+02
IS,source to drain current(A)
ID=20A
Rdson,Drain-to-Source On
Resistance(Normalized)
50
20
15
125℃
10
5
25℃
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
0
2
3
4
5
6
7
8
9
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD,source to drain voltage(V)
VGS,gate to source voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
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1 1.1 1.2
10
Figure 6: Body-Diode Characteristics
Page 3 of 6
Rev.1.0
SSF5508D
Preliminary
Typical Electrical and Thermal Characteristics
Figure 7: Gate-Charge Characteristics Figure
8: Capacitance Characteristics
1000
ID,drain current(A)
10uS
Ron
limited
100
100uS
DC
10
1mS
10mS
Tj(max)=150℃
1
Tc=25℃
0.1
0.01
0.1
1
10
100
VDS,drain to source voltage(V)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating
Operating Area(⑤)
Figure 11: Power De-rating (③)
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Junction-to-Case (⑤)
Figure 12: Current De-rating (③)
Page 4 of 6
Rev.1.0
SSF5508D
Preliminary
Typical Electrical and Thermal Characteristics
Figure 13:Transient
Thermal Impedance Curve
Notes:①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case
thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
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Page 5 of 6
Rev.1.0
SSF5508D
Preliminary
DPAK (TO-252) Mechanical Data
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Page 6 of 6
Rev.1.0