Datasheet

AON7220
25V N-Channel MOSFET
General Description
Product Summary
The AON7220 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
VDS
25V
50A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 3mΩ
RDS(ON) (at VGS = 4.5V)
< 4mΩ
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
39
A
37
IDSM
TA=70°C
±12
311
IDM
TA=25°C
Units
V
50
ID
TC=100°C
Maximum
25
A
30
Avalanche Current C
IAS, IAR
48
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
115
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: March 2011
6.2
Steady-State
Steady-State
RθJA
RθJC
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W
4
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7220
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
311
VGS=10V, ID=20A
TJ=125°C
100
nA
1.3
1.8
V
2.5
3
A
3.5
4.2
VGS=4.5V, ID=18A
3.2
4
gFS
Forward Transconductance
VDS=5V, ID=20A
160
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.66
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
25
VDS=25V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
1
V
50
A
2368
2961
3554
pF
VGS=0V, VDS=12.5V, f=1MHz
686
981
1276
pF
19
66
113
pF
VGS=0V, VDS=0V, f=1MHz
0.3
0.67
1.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
34
42.8
52
nC
Qg(4.5V) Total Gate Charge
12
17.4
23
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=12.5V, ID=20A
VGS=10V, VDS=12.5V,
RL=0.625Ω, RGEN=3Ω
6
nC
3.6
nC
7.8
ns
2.5
ns
37.8
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
14
18.1
22
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
31
39.2
47
ns
3.8
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: March 2011
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Page 2 of 6
AON7220
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4.5V
10V
VDS=5V
4.0V
80
60
3.5V
60
ID(A)
ID (A)
80
40
40
3V
20
125°C
25°C
20
VGS=2.5V
0
0
0
1
2
3
4
5
0
6
8
2
3
4
5
6
Normalized On-Resistance
1.8
6
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
VGS=4.5V
2
VGS=10V
VGS=10V
ID=20A
1.6
1.4
17
VGS=4.5V
5
ID=18A
1.2
2
10
1.0
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
12
1.0E+02
ID=20A
1.0E+01
10
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
8
125°C
6
1.0E-01
25°C
1.0E-02
4
1.0E-03
2
1.0E-04
25°C
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: March 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7220
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
Capacitance (pF)
VGS (Volts)
3000
VDS=12.5V
ID=20A
8
6
4
Ciss
2500
2000
1500
Coss
1000
2
500
0
Crss
0
0
5
10
15
20
25
30
35
40
45
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
100µs
1ms
10.0
DC
10ms
1.0
TJ(Max)=150°C
TC=25°C
Power (W)
ID (Amps)
10µs
RDS(ON)
limited
0.1
20
25
800
TJ(Max)=150°C
TC=25°C
600
17
5
2
10
400
200
0.0
0
0.01
0.1
1
10
100
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
15
1000
1000.0
100.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating18
Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: March 2011
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Page 4 of 6
AON7220
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000.0
100.0
TA=150°C
10.0
TA=125°C
1.0
80
60
40
20
0
1
10
100
1000
0
25
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
75
100
150
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
30
17
5
2
10
100
20
10
10
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
150
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
40
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: March 2011
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Page 5 of 6
AON7220
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: March 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6