Datasheet

AON7460
300V,4A N-Channel MOSFET
General Description
Product Summary
The AON7460 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be adopted
quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
350V@150℃
ID (at VGS=10V)
4A
RDS(ON) (at VGS=10V)
< 0.83Ω
100% UIS Tested!
100% Rg Tested!
Top View
DFN 3x3A_EP
Bottom View
Top View
D
S
S
D
D
S
G
D
D
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
Avalanche Current
C
V
A
13
1.2
IDSM
TA=70°C
±30
2.5
IDM
TA=25°C
Continuous Drain
Current
Units
V
4
ID
TC=100°C
C
Maximum
300
A
1.0
IAR
2.1
A
Repetitive avalanche energy C
EAR
66
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
EAS
dv/dt
132
5
33
mJ
V/ns
W
13
W
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation A
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: Mar 2011
3.1
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
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W
2
-50 to 150
Typ
30
60
3.1
°C
Max
40
75
3.7
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7460
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
300
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V, ID=250µA
VGS(th)
ID=250µA, VGS=0V, TJ=150°C
350
V
ID=250µA, VGS=0V
0.3
V/ oC
VDS=300V, VGS=0V
1
VDS=240V, TJ=125°C
10
µA
±100
3.3
3.9
4.5
nΑ
V
0.83
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.2A
0.67
gFS
Forward Transconductance
VDS=40V, ID=1.2A
2
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
4
A
ISM
Maximum Body-Diode Pulsed Current
13
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
S
0.76
240
310
380
pF
30
45
60
pF
3.0
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
pF
1.4
2.9
4.5
Ω
5.4
6.8
8.2
nC
VGS=10V, VDS=240V, ID=1.2A
Qgs
Gate Source Charge
1.9
nC
Qgd
Gate Drain Charge
2.0
nC
tD(on)
Turn-On DelayTime
17
ns
tr
Turn-On Rise Time
8
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=1.2A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
VGS=10V, VDS=150V, ID=1.2A,
RG=25Ω
IF=1.2A,dI/dt=100A/µs,VDS=100V
29
ns
12
ns
60
88
120
0.20
0.29
0.40
ns
µC
A. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Mar 2011
www.aosmd.com
Page 2 of 6
AON7460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
VDS=40V
10V
8
-55°C
6.5V
10
ID(A)
ID (A)
6
6.0V
4
125°C
1
25°C
VGS=5.5V
2
0.1
0
0
5
10
15
20
VDS (Volts)
Fig 1: On-Region Characteristics
2
25
2.0
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
3
1.5
RDS(ON) (Ω
Ω)
4
VGS=10V
1.0
0.5
2.5
VGS=10V
ID=1.2A
2
1.5
1
0.5
0.0
0
0
2
4
6
8
10
-100
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.2
40
125°C
1.0E-01
25°C
IS (A)
BVDSS (Normalized)
1.0E+00
1.1
1
1.0E-02
0.9
1.0E-03
1.0E-04
0.8
-100
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev 0: Mar 2011
-50
0
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0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Page 3 of 6
AON7460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
15
VDS=240V
ID=1.2A
Ciss
100
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
10
Crss
1
3
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
10
100
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
400
10
TJ(Max)=150°C
TC=25°C
10µs
1
100µs
1ms
DC
10ms
0.1
Power (W)
300
RDS(ON)
limited
ID (Amps)
1
200
100
TJ(Max)=150°C
0.01
0
1
10
100
1000
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Mar 2011
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Page 4 of 6
AON7460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5.0
4.0
30
Current rating ID(A)
Power Dissipation (W)
40
20
10
3.0
2.0
1.0
0
0.0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note B)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note B)
150
100
TJ(Max)=150°C
TA=25°C
Power (W)
80
60
40
20
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 0: Mar 2011
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Page 5 of 6
AON7460
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 0: Mar 2011
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6