PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 02 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra small SMD SOT666 plastic package. 1.2 Features Forward current: 1.5 A Reverse voltage: 30 V Ultra low forward voltage Ultra small SMD packages 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Voltage clamping Inverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF forward current Tsp ≤ 55 °C VR reverse voltage VF forward voltage [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. IF = 1.5 A Min [1] Typ Max Unit - - 1.5 A - - 30 V - 480 550 mV PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 cathode 3 anode 4 anode 5 cathode 6 cathode Simplified outline 6 5 Symbol 4 1, 2 5, 6 3, 4 sym038 1 2 3 3. Ordering information Table 3. Ordering information Type number PMEG3015EV Package Name Description Version - plastic surface mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMEG3015EV 1A PMEG3015EV_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 2 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 30 V VR reverse voltage IF forward current - 1.5 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 [1] - 4.5 A IFSM non-repetitive peak forward current tp = 8 ms; square wave [1] - 9.5 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 0.31 W [3] - 0.58 W Tsp ≤ 55 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] For SOT666 only valid, if pins 3 and 4 are connected in parallel. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm2. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction in free air to ambient Rth(j-sp) Conditions thermal resistance from junction to solder point Typ Max Unit [3] - - 405 K/W [4] - - 215 K/W - - 80 K/W [1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm2. PMEG3015EV_2 Product data sheet Min [1][2] © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 3 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF IR Cd [1] Parameter Conditions forward voltage reverse current diode capacitance Min Typ Max Unit IF = 1 mA [1] - 125 160 mV IF = 10 mA [1] - 185 220 mV IF = 100 mA [1] - 255 290 mV IF = 500 mA [1] - 340 380 mV IF = 1 A [1] - 410 480 mV IF = 1.5 A [1] - 480 550 mV VR = 10 V - 60 150 μA VR = 30 V - 400 1000 μA VR = 1 V; f = 1 MHz - 60 72 pF Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PMEG3015EV_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 4 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 006aaa079 104 IR (mA) IF (mA) 006aaa075 103 (5) 102 (4) 103 (3) 10 102 1 (5) (4) (2) (3) (2) 10−1 (1) 10 10−2 (1) 10−3 1 10−4 10−5 10−1 0 0.2 0.4 0 0.6 4 8 VF (V) (1) Tamb = −40 °C 16 20 24 28 32 VR (V) (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 85 °C (3) Tamb = 85 °C (4) Tamb = 125 °C (4) Tamb = 125 °C (5) Tamb = 150 °C (5) Tamb = 150 °C Fig 1. 12 Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values 006aaa076 120 Cd (pF) 80 40 0 0 10 20 30 VR (V) Tamb = 25 °C; f = 1 MHz Fig 3. Diode capacitance as a function of reverse voltage; typical values PMEG3015EV_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 5 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 8. Package outline 1.7 1.5 6 0.6 0.5 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 1 2 3 0.27 0.17 0.5 0.18 0.08 1 Dimensions in mm Fig 4. 04-11-08 Package outline SOT666 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 4000 PMEG3015EV [1] SOT666 4 mm pitch, 8 mm tape and reel -115 For further information and the availability of packing methods, see Section 13. PMEG3015EV_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 6 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier Ow1 = 0.550 OA (2x) 0.075 e = 1.000 Ow = 1.700 OA Obw = Pbw = 2.000 OA Pw = 0.400 (6x) PI = 2.100 Obl = Pbl = 1.600 OA Wt = 0.375 CU (4x) OI = 2.450 OA W/2 = 0.150 CU (4x) OI1 = 2.750 OA W = 0.300 CU (2x) 10. Soldering SOLDER LANDS SOLDER RESIST OCCUPIED AREA PLACEMENT AREA Lb = 1.200 CU La = 2.200 CU La1 = 2.500 CU MSD779 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 5. Reflow soldering footprint SOT666 PMEG3015EV_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 7 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG3015EV_2 20100204 Product data sheet - PMEG3015EV_1 Modifications: PMEG3015EV_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. 20050404 Product data sheet PMEG3015EV_2 Product data sheet - - © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 8 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMEG3015EV_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 4 February 2010 9 of 10 PMEG3015EV NXP Semiconductors 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 February 2010 Document identifier: PMEG3015EV_2