DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product data sheet Supersedes data of 2004 Apr 02 2004 Jun 14 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV FEATURES QUICK REFERENCE DATA • Forward current: 1 A SYMBOL • Reverse voltages: 20 V, 30 V, 40 V • Very low forward voltage PARAMETER MAX. UNIT IF forward current 1 A VR reverse voltage 20; 30; 40 V • Ultra small and very small plastic SMD package • Power dissipation comparable to SOT23. PINNING PIN APPLICATIONS DESCRIPTION PMEGXX10BEA (see Fig.1) • High efficiency DC-to-DC conversion • Voltage clamping • Protection circuits 1 cathode 2 anode PMEGXX10BEV (see Fig.2) • Low voltage rectification 1, 2, 5, 6 • Blocking diodes cathode 3, 4 • Low power consumption applications. anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) and ultra small SOT666 SMD plastic package. 1 2 1 2 sym001 MARKING TYPE NUMBER The marking bar indicates the cathode. MARKING CODE PMEG2010BEA V1 PMEG3010BEA V2 PMEG4010BEA V3 PMEG2010BEV G6 PMEG3010BEV G5 PMEG4010BEV G4 Fig.1 Simplified outline (SOD323; SC-76) and symbol. 6 5 4 1, 2 5, 6 3, 4 sym038 1 2 3 Fig.2 Simplified outline (SOT666) and symbol. 2004 Jun 14 2 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEGXX10BEA PMEGXX10BEV − DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD323 plastic surface mounted package; 6 leads SOT666 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage PMEG2010BEA/PMEG2010BEV − 20 V PMEG3010BEA/PMEG3010BEV − 30 V PMEG4010BEA/PMEG4010BEV − 40 V IF continuous forward current Ts ≤ 55 °C; note 1 − 1 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A IFSM non-repetitive peak forward current tp = 8 ms; square wave; note 2 − 10 A Tj junction temperature note 3 − 150 °C Tamb operating ambient temperature note 3 −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 2004 Jun 14 3 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT PMEGXX10BEA (SOD323) Rth(j-a) thermal resistance from junction to ambient in free air; notes 1 and 2 450 K/W in free air; notes 2 and 3 210 K/W Rth(j-s) thermal resistance from junction to soldering point note 4 90 K/W thermal resistance from junction to ambient in free air; notes 2 and 5 405 K/W in free air; notes 2 and 6 215 K/W thermal resistance from junction to soldering point note 4 80 K/W PMEGXX10BEV (SOT666) Rth(j-a) Rth(j-s) Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. 5. Refer to SOT666 standard mounting conditions. 6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT TYP. VF IR Cd forward voltage continuous reverse current diode capacitance TYP. MAX. TYP. MAX. IF = 0.1 mA 90 130 90 130 95 130 mV IF = 1 mA 150 190 150 200 155 210 mV IF = 10 mA 210 240 215 250 220 270 mV IF = 100 mA 280 330 285 340 295 350 mV IF = 500 mA 355 390 380 430 420 470 mV IF = 1 000 mA 420 500 450 560 540 640 mV VR = 10 V; note 1 15 40 12 30 7 20 μA VR = 20 V; note 1 40 200 − − − − μA VR = 30 V; note 1 − − 40 150 − − μA VR = 40 V; note 1 − − − − 30 100 μA VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jun 14 MAX. 4 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV GRAPHICAL DATA MHC673 104 handbook, halfpage MHC674 105 handbook, halfpage IF (mA) IR (μA) 103 (1) 104 (1) 102 (2) (3) 103 10 102 1 10 (2) (3) 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 10 PMEG2010BEA/PMEG2010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG2010BEA/PMEG2010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.3 Fig.4 Forward current as a function of forward voltage; typical values. MHC675 140 15 20 Reverse current as a function of reverse voltage; typical values. MHC676 104 handbook, halfpage Cd halfpage handbook, VR (V) IF (mA) (pF) 120 103 100 (1) 102 80 60 (2) (3) 10 40 1 20 10−1 0 0 5 10 15 VR (V) 20 0 0.2 PMEG2010BEA/PMEG2010BEV Tamb = 25 °C; f = 1 MHz. PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.5 Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2004 Jun 14 5 0.4 VF (V) 0.6 Forward current as a function of forward voltage; typical values. NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV MHC677 105 MHC678 120 d (pF) 100 handbook, C halfpage IR (μA) (1) 104 80 103 (2) 60 102 40 (3) 10 1 20 0 5 10 15 20 0 25 30 VR (V) 0 5 10 PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG3010BEA/PMEG3010BEV Tamb = 25 °C; f = 1 MHz. Fig.7 Fig.8 Reverse current as a function of reverse voltage; typical values. MHC679 104 handbook, halfpage 20 MHC680 IR (μA) 103 VR (V) Diode capacitance as a function of reverse voltage; typical values. 105 handbook, halfpage IF (mA) (1) 104 (1) 102 (2) (3) 103 10 102 1 10 10−1 15 0 0.2 0.4 VF (V) 1 0.6 (2) (3) 0 10 20 30 VR (V) 40 PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. Fig.9 Fig.10 Reverse current as a function of reverse voltage; typical values. Forward current as a function of forward voltage; typical values. 2004 Jun 14 6 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV MHC681 100 Cd (pF) handbook, halfpage 80 60 40 20 0 0 5 10 15 VR (V) 20 PMEG4010BEA/PMEG4010BEV Tamb = 25 °C; f = 1 MHz. Fig.11 Diode capacitance as a function of reverse voltage; typical values. 2004 Jun 14 7 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV PACKAGE OUTLINES Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Jun 14 REFERENCES IEC JEDEC JEITA SC-76 8 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 04-11-08 06-03-16 SOT666 2004 Jun 14 EUROPEAN PROJECTION 9 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jun 14 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp11 Date of release: 2004 Jun 14 Document order number: 9397 750 13234