A3RS91.1 High Power Chip Termination 100 Watts When properly mounted on an appropriate heat sink, this chip device provides high power dissipation capabilities. Ideal for ferrite isolator applications, the improved thin film design technology and laser trimming provide proven RF power capabilities to meet the demands of today's CDMA and WCDMA system requirements. Aluminum Nitride is featured for those applications where the use and disposal of Beryllium oxide is a concern. • Environmentally friendly AlN substrate • High performance, thin film element • Power 100 Watts • New adhesion process results in improved terminal strength • On-chip matching network improves frequency performance over the DC-3 GHz frequency range PHYSICAL DIMENSIONS SPECIFICATIONS Parameters Specifications Frequency Range DC to 3 GHz Power 100 Watts* VSWR 1.10:1 max Resistance 50 Ohms +/- 5% Operating Temperature -55 °C to 150 °C Substrate Aluminum Nitride .225 REF [5,72] REF .045 [1,14] .350REF [8,89]REF * Refer to average power derating curve chart. TYPICAL PERFORMANCE .050 [1,27] .040 REF [1,02] A3RS91.1 WRAP AROUND AVERAGE POWER DERATING CURVE % OF RATED POWER 100 75 50 25 0 25 50 75 100 125 150 CHIP BASE TEMP ºC KEY: Inches [Millimeters] .XX ±.03 .XXX ±.010 [.X ±0.8 .XX ±0.25] 300 Dino Drive, Ann Arbor, MI 48103 Tel: 888-244-6638 or 734-426-5553 • Fax: 734-426-5557 www.aeroflex.com/inmet • [email protected] REV 04/11