TRENCHSTOP™ Series IKW50N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW50N60T C G E PG-TO247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 50A 1.5V 175C K50T60 PG-TO247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 80 Unit V DC collector current, limited by Tjmax TC = 25C 2) 50 TC = 100C Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 150 IF 100 A Diode forward current, limited by Tjmax TC = 25C 50 TC = 100C Diode pulsed current, tp limited by Tjmax IFpuls 150 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 333 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 3) Short circuit withstand time VGE = 15V, VCC 400V, Tj 150C C 260 1 J-STD-020 and JESD-022 Value limited by bond wire 3) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) IFAG IPC TD VLS 1 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IKW50N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.45 K/W RthJCD 0.8 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2 T j =1 7 5 C - 1.9 - T j =2 5 C - 1.65 2.05 T j =1 7 5 C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 50 A V G E = 0V , I F = 5 0 A Gate-emitter threshold voltage VGE(th) I C = 0. 8m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 3500 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 50 A - 31 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 3140 - Output capacitance Coss V G E = 0V , - 200 - Reverse transfer capacitance Crss f= 1 MH z - 93 - Gate charge QGate V C C = 48 0 V, I C =5 0 A - 310 - nC - 13 - nH - 458.3 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j 1 50 C Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IKW50N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 26 - - 29 - - 299 - - 29 - - 1.2 - - 1.4 - - 2.6 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=50A, VGE=0/15V,rG=7, L =103nH,C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 143 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 5 0 A, - 1.8 - µC Diode peak reverse recovery current Irrm d i F / d t =1 2 80 A / s - 27.7 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 671 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 27 - - 33 - - 341 - - 55 - - 1.8 - - 1.8 - - 3.6 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=50A, VGE=0/15V,rG=7, L =103nH,C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 7 5 C - 205 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 5 0 A, - 4.3 - µC Diode peak reverse recovery current Irrm d i F / d t =1 2 80 A / s - 40.7 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 449 - A/s IFAG IPC TD VLS 3 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series 140A IKW50N60T q t p=2µs 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 100A T C =80°C 80A T C =110°C 60A 40A 20A 0A 100H z Ic Ic 10µs 10A 50µs 1ms DC 1A 1kH z 10kHz 100kH z 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 7) 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 300W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 80A 250W 200W 150W 100W 60A 40A 20A 50W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) IFAG IPC TD VLS 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) Rev. 2.6 20.09.2013 TRENCHSTOP™ Series 120A V G E =20V 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 15V 13V 80A 11V 9V 60A 7V 40A 20A 100A V G E =20V 15V 13V 80A 11V 60A 9V 7V 40A 20A 0A 0V 1V 2V 0A 3V 0V 80 A 60 A 40 A T J = 17 5 °C 20 A 2 5 °C 0A 0V 2V 4V 6V 2V 3V 2.5V 4V IC =100A 2.0V IC =50A 1.5V IC =25A 1.0V 0.5V 0.0V 0°C 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) IFAG IPC TD VLS 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IKW50N60T q 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IKW50N60T q t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tr tf t d(on) 100ns tf tr t d(on ) 10ns 10ns 0A 20A 40 A 60A 80 A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 7Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d (off) 100n s tf tr t d(on) 10 ns 25°C 50 °C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 12 5°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, rG=7Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA) 6 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series *) Eon and Ets include losses due to diode recovery *) E on a nd E ts in clu d e lo ss e s Ets* Eon* 4.0mJ Eoff 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES d u e to d io d e rec o v e ry 6 .0m J 8.0mJ 6.0mJ E ts * 5 .0m J 4 .0m J 3 .0m J E off 2 .0m J E on * 1 .0m J 0 .0m J 0.0mJ 0A 20A 40A 60A 80A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 7Ω, Dynamic test circuit in Figure E) 2.0mJ Eoff Eon* 75°C 4m J E on * 3m J E ts * 2m J E off 1m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, rG = 7Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recovery 3.0mJ 50°C *) E on and E ts include losses Ets* 0.0mJ 25°C RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery 1.0mJ IKW50N60T q 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 50A, rG = 7Ω, Dynamic test circuit in Figure E) 7 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IKW50N60T q VGE, GATE-EMITTER VOLTAGE C iss 15V c, CAPACITANCE 1nF 120V 480V 10V C oss 100pF 5V C rss 0V 0nC 100nC 200nC 0V 300nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 800A 700A 600A 500A 400A 300A 200A 100A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IKW50N60T q 10 K/W D=0.5 0.2 -1 10 K/W 0.1 R,(K/W) 0.18355 0.12996 0.09205 0.03736 0.00703 0.05 0.02 -2 10 K/W , (s) 7.425*10-2 8.34*10-3 7.235*10-4 1.035*10-4 4.45*10-5 R1 R2 0.01 C 1 = 1 /R 1 C 2 = 2 /R 2 ZthJC, TRANSIENT THERMAL IMPEDANCE ZthJC, TRANSIENT THERMAL IMPEDANCE D=0.5 0.2 -1 10 K/W 0.05 0.02 10µs 100µs 1ms 6.53*10 R2 0.01 -2 10 K/W 10ms 100ms C1= 1/ R1 1µs C 2 = 2 /R 2 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 4.0µC 300ns Qrr, REVERSE RECOVERY CHARGE TJ=175°C trr, REVERSE RECOVERY TIME , (s) 7.037*10-2 7.312*10-3 6.431*10-4 4.79*10-5 single pulse tP, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = tp / T) 250ns 200ns 150ns TJ=25°C 100ns 50ns 0ns 700A/µs R,(K/W) 0.2441 0.2007 0.1673 0.1879 R1 single pulse 1µs 0.1 T J =175°C 3.5µC 3.0µC 2.5µC 2.0µC 1.5µC T J=25°C 1.0µC 0.5µC 0.0µC 700A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E) IFAG IPC TD VLS 800A/µs 900A/µs 1000A/µs 900A/µs 1000A/µs 9 diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E) Rev. 2.6 20.09.2013 TRENCHSTOP™ Series T J =175°C -750A/µs dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 40A 30A T J =25°C 20A 10A 800A/µs 900A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E) -600A/µs -450A/µs T J=175°C -300A/µs -150A/µs 800A/µs 900A/µs I F =100A VF, FORWARD VOLTAGE 2.0V 100A T J =25°C 175°C 80A 60A 40A 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E) 120A IF, FORWARD CURRENT T J=25°C 0A/µs 700A/µs 0A 700A/µs IKW50N60T q 50A 1.5V 25A 1.0V 0.5V 20A 0.0V 0°C 0A 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage IFAG IPC TD VLS 10 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IFAG IPC TD VLS 11 IKW50N60T q Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IKW50N60T q i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 12 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IKW50N60T q Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 13 Rev. 2.6 20.09.2013