IGP50N60T

IGP50N60T
TRENCHSTOP™ Series
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
C
Features:
 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Designed for :
- Frequency Converters
- Uninterrupted Power Supply
 TRENCHSTOP™ and Fieldstop technology for 600V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
 Positive temperature coefficient in VCE(sat)
 Low EMI
 Low Gate Charge
1
 Qualified according to JEDEC for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGP50N60T
G
E
PG-TO220-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
600 V
50 A
1.5 V
175 C
G50T60
PG-TO220-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage, Tj ≥ 25C
VCE
600
IC
90
Unit
V
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
64
TC = 100C
A
Pulsed collector current, tp limited by Tjmax
ICpul s
150
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
150
Gate-emitter voltage
VGE
20
V
tSC
5
s
Power dissipation TC = 25C
Ptot
333
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
Short circuit withstand time
2)
VGE = 15V, VCC  400V, Tj  150C
1
2)
C
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.45
K/W
RthJA
62
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j =2 5 C
-
1.5
2.0
T j =1 7 5 C
-
1.9
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 50 A
Gate-emitter threshold voltage
VGE(th)
I C = 0. 8m A, V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
3500
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 50 A
-
31
-
S
Integrated gate resistor
RGint
Ω
-
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
3140
-
Output capacitance
Coss
V G E = 0V ,
-
200
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
93
-
Gate charge
QGate
V C C = 48 0 V, I C =5 0 A
-
310
-
nC
PG - T O - 2 2 0- 3 - 1
-
7
-
nH
PG - T O - 2 4 7- 3 - 2 1
-
13
-
V G E = 15 V ,t S C  5 s
V C C = 4 0 0 V,
T j  1 50  C
-
458.3
-
pF
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
IC(SC)
A
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
26
-
-
29
-
-
299
-
-
29
-
-
1.2
-
-
1.4
-
-
2.6
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L =103nH,C =39pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW50N60T
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
27
-
-
33
-
-
341
-
-
55
-
-
1.8
-
-
1.8
-
-
3.6
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
IFAG IPC TD VLS
T j=175 C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L =103nH,C =39pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW50N60T
3
ns
mJ
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
140A
t p =2µs
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
120A
100A
T C =80°C
80A
T C =110°C
60A
40A
20A
0A
100Hz
Ic
Ic
10µs
10A
50µs
1ms
DC
1A
1kHz
10kHz
100kHz
1V
f, SWITCHING FREQUENCY
10V
100V
10ms
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj  175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 7)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
90A
80A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
300W
250W
200W
150W
100W
50W
0W
25°C
70A
60A
50A
40A
30A
20A
10A
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj  175C)
IFAG IPC TD VLS
__ Icmax
--- max. current limited by bondwire
50°C
75°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE  15V, Tj  175C)
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Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
120A
V G E =20V
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
120A
15V
13V
80A
11V
9V
60A
7V
40A
20A
100A
15V
13V
80A
11V
60A
9V
7V
40A
20A
0A
0A
0V
1V
2V
3V
0V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
60A
40A
T J =175°C
25°C
0A
0V
2V
4V
6V
8V
3V
2.5V
4V
IC =100A
2.0V
I C =50A
1.5V
IC =25A
1.0V
0.5V
0.0V
0°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
2V
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
20A
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
V G E =20V
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
5
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
t d(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
tr
tf
t d(on)
100ns
tf
tr
t d(on)
10ns
10ns
0A
20A
40A
60A

80A

IC, COLLECTOR CURRENT




RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 7Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
7V
100ns
tf
tr
t d(on)
10ns
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG=7Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
t d(off)
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
(IC = 0.8mA)
6
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
*) Eon and Ets include losses
due to diode recovery
*) E on and E ts include losses
Ets*
E ts *
6.0mJ
Eon*
4.0mJ
Eoff
2.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
due to diode recovery
6.0m J
8.0mJ
5.0m J
4.0m J
3.0m J
E off
2.0m J
E on *
1.0m J
0.0m J
0.0mJ
0A
20A
40A
60A

80A

IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 7Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
*) E on and E ts include losses
due to diode recovery
3.0mJ
2.0mJ
Eoff
Eon*
0.0mJ
25°C
4m J
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
Ets*
1.0mJ
50°C
75°C
E on *
3m J
E ts *
2m J
E off
1m J
0m J
300V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG = 7Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS

350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 50A, rG = 7Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
1nF
120V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
C iss
15V
480V
10V
C oss
5V
100pF
C rss
0V
0nC
100nC
200nC
300nC
0V
QGE, GATE CHARGE
10V
20V
30V
40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=50 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
800A
700A
600A
500A
400A
300A
200A
100A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE  400V, Tj  150C)
IFAG IPC TD VLS
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
ZthJC, TRANSIENT THERMAL IMPEDANCE
D=0.5
0.2
-1
10 K/W
0.1
R,(K/W)
0.18355
0.12996
0.09205
0.03736
0.00703
0.05
0.02
-2
10 K/W
R1
0.01
, (s)
7.425*10-2
8.34*10-3
7.235*10-4
1.035*10-4
4.45*10-5
R2
C 1 =  1 /R 1
C 2 =  2 /R 2
single pulse
1µs
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
IFAG IPC TD VLS
9
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
PG-TO220-3
IFAG IPC TD VLS
10
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
1
2
r1
n
r2
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
IFAG IPC TD VLS
11
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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types in question, please contact the nearest Infineon Technologies Office.
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systems and/or automotive, aviation and aerospace applications or systems only with the express written
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failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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to assume that the health of the user or other persons may be endangered.
IFAG IPC TD VLS
12
Rev. 2.8 19.05.2015