TrenchStop Series IGW75N60T q Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW75N60T G E P-TO-247-3-1 (TO-220AC) VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code 600V 75A 1.5V 175°C G75T60 TO-247 Q67040S4726 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value Unit 600 V A TC = 25°C 150 TC = 100°C 75 Pulsed collector current, tp limited by Tjmax ICpuls 225 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 225 Gate-emitter voltage VGE ±20 V tSC 5 µs Short circuit withstand time 1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Ptot 428 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 1) 260 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC TO-247 0.35 K/W RthJA TO-247 AC 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25° C - 1.5 2.0 T j = 17 5° C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 75A Gate-emitter threshold voltage VGE(th) I C = 1. 2mA, V C E = V G E Zero gate voltage collector current ICES V C E = 600V , V G E = 0V µA T j = 25° C - - 40 T j = 17 5° C - - 1000 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 75A - 41 - S Integrated gate resistor RGint - Ω Dynamic Characteristic pF Input capacitance Ciss V C E = 25V, - 4620 - Output capacitance Coss V G E = 0V, - 288 - Reverse transfer capacitance Crss f= 1 M Hz - - Gate charge QGate V C C = 4 80V, I C = 75A - 137 470 - nC V G E = 1 5V Internal emitter inductance LE T O -247-3- 1 - 7 - nH IC(SC) V G E = 1 5V,t S C ≤5µs V C C = 400V, T j ≤ 150° C - 687.5 - A measured 5mm (0.197 in.) from case Short circuit collector current1) 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 33 - - 36 - - 330 - - 35 - - 2.0 - - 2.5 - - 4.5 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 1) Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 4 00V, I C = 75A, V G E = 0/ 1 5V , R G = 5Ω, L σ 2 ) = 100nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 1) Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) 2) T j = 17 5° C, V C C = 4 00V, I C = 75A, V G E = 0/ 1 5V , R G = 5Ω L σ 2 ) = 100nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. - 32 - - 37 - - 363 - - 38 - - 2.9 - - 2.9 - - 5.8 - ns mJ Includes Reverse Recovery Losses from IKW75N60T due to dynamic test circuit in Figure E. Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series t p=1µs 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 200A 50A T C =80°C 00A 50A T C =110°C Ic 100H z 50µs 10A 1ms DC 1A Ic 0A 10H z 10µs 1kH z 10kH z 1V 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 5Ω) 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 400W 120A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 350W 300W 250W 200W 150W 100W 90A 60A 30A 50W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series 120A V GE =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 15V 90A 13V 11V 9V 60A 7V 30A 0A 0V 1V 2V VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE IC, COLLECTOR CURRENT 40A T J = 1 7 5 °C 2 5 °C 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 13V 11V 9V 60A 7V 30A 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) 60A 0V 90A 0V 80A 0A 15V 0A 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 20A V GE =20V IC =150A 2.5V 2.0V IC =75A 1.5V IC =37.5A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series t, SWITCHING TIMES t, SWITCHING TIMES t d(off) 100ns tf t d(off) 100ns tf tr t d(on) t d(on) tr 10ns 0A 40A 80A 10ns 120A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 5Ω, Dynamic test circuit in Figure E) 5Ω 10Ω 15Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tr tf t d(on) 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, RG=5Ω, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA) 6 Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series *) E on a nd E ts include losses Ets* 12.0mJ Eon* 8.0mJ Eoff 4.0mJ d ue to diode re co ve ry E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery 0A 20A 40A 60A 4.0m J E on * 2.0m J E off 0Ω 80A 100A 120A 140A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 5Ω, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery 2.0mJ Eon* 1.0mJ 75°C 8m J E on * 6m J E ts * 4m J E off 2m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, RG = 5Ω, Dynamic test circuit in Figure E) Power Semiconductors 15Ω due to diode recovery Ets* Eoff 50°C 10Ω *) E on and E ts include losses 4.0mJ 0.0mJ 25°C 5Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES 5.0mJ E, SWITCHING ENERGY LOSSES 6.0m J 0.0m J 0.0mJ 3.0mJ E ts * 8.0m J 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 75A, RG = 5Ω, Dynamic test circuit in Figure E) 7 Rev. 2.1 Dec-04 TrenchStop Series IGW75N60T q VGE, GATE-EMITTER VOLTAGE C iss c, CAPACITANCE 1 5V 120 V 1 0V 48 0V 1nF C oss 5V C rss 100pF 0V 0nC 1 00n C 20 0nC 30 0nC 0V 400 nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=75 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 1000A 750A 500A tSC, 250A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.1 Dec-04 TrenchStop Series IGW75N60T q ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 -1 10 K/W 0.2 0.1 0.05 -2 10 K/W R,(K/W) 0.1968 0.0733 0.0509 0.02 0.0290 0.01 R 1 τ, (s) 0.115504 0.009340 0.000823 0.000119 R2 C1= τ1/R1 C2=τ2/R2 single pulse -3 10 K/W 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series dimensions TO-247AC symbol [mm] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 Q 10 0.0299 max H ∅P Power Semiconductors [inch] 3.61 6.12 0.1421 6.22 0.2409 0.2449 Rev. 2.1 Dec-04 IGW75N60T q TrenchStop Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.1 Dec-04 TrenchStop Series IGW75N60T q Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.1 Dec-04