INFINEON Q67040S4726

TrenchStop Series
IGW75N60T
q
Low Loss IGBT in Trench and Fieldstop technology
•
•
•
•
•
•
•
•
•
C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGW75N60T
G
E
P-TO-247-3-1
(TO-220AC)
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
Ordering Code
600V
75A
1.5V
175°C
G75T60
TO-247
Q67040S4726
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current, limited by Tjmax
IC
Value
Unit
600
V
A
TC = 25°C
150
TC = 100°C
75
Pulsed collector current, tp limited by Tjmax
ICpuls
225
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
-
225
Gate-emitter voltage
VGE
±20
V
tSC
5
µs
Short circuit withstand time
1)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Ptot
428
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
1)
260
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
TO-247
0.35
K/W
RthJA
TO-247 AC
40
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j = 25° C
-
1.5
2.0
T j = 17 5° C
-
1.9
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V, I C = 0. 2mA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15V, I C = 75A
Gate-emitter threshold voltage
VGE(th)
I C = 1. 2mA, V C E = V G E
Zero gate voltage collector current
ICES
V C E = 600V ,
V G E = 0V
µA
T j = 25° C
-
-
40
T j = 17 5° C
-
-
1000
Gate-emitter leakage current
IGES
V C E = 0V ,V G E = 2 0V
-
-
100
nA
Transconductance
gfs
V C E = 20V, I C = 75A
-
41
-
S
Integrated gate resistor
RGint
-
Ω
Dynamic Characteristic
pF
Input capacitance
Ciss
V C E = 25V,
-
4620
-
Output capacitance
Coss
V G E = 0V,
-
288
-
Reverse transfer capacitance
Crss
f= 1 M Hz
-
-
Gate charge
QGate
V C C = 4 80V, I C = 75A
-
137
470
-
nC
V G E = 1 5V
Internal emitter inductance
LE
T O -247-3- 1
-
7
-
nH
IC(SC)
V G E = 1 5V,t S C ≤5µs
V C C = 400V,
T j ≤ 150° C
-
687.5
-
A
measured 5mm (0.197 in.) from case
Short circuit collector current1)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
33
-
-
36
-
-
330
-
-
35
-
-
2.0
-
-
2.5
-
-
4.5
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
1)
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 25° C,
V C C = 4 00V, I C = 75A,
V G E = 0/ 1 5V ,
R G = 5Ω,
L σ 2 ) = 100nH,
C σ 2 ) =39pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
1)
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
2)
T j = 17 5° C,
V C C = 4 00V, I C = 75A,
V G E = 0/ 1 5V ,
R G = 5Ω
L σ 2 ) = 100nH,
C σ 2 ) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
32
-
-
37
-
-
363
-
-
38
-
-
2.9
-
-
2.9
-
-
5.8
-
ns
mJ
Includes Reverse Recovery Losses from IKW75N60T due to dynamic test circuit in Figure E.
Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
t p=1µs
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
200A
50A
T C =80°C
00A
50A
T C =110°C
Ic
100H z
50µs
10A
1ms
DC
1A
Ic
0A
10H z
10µs
1kH z
10kH z
1V
100kH z
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 5Ω)
10V
100V
10ms
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
400W
120A
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATION
350W
300W
250W
200W
150W
100W
90A
60A
30A
50W
0W
25°C
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. DC Collector current as a function
of case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
120A
V GE =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
120A
15V
90A
13V
11V
9V
60A
7V
30A
0A
0V
1V
2V
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC, COLLECTOR CURRENT
40A
T J = 1 7 5 °C
2 5 °C
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
13V
11V
9V
60A
7V
30A
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
60A
0V
90A
0V
80A
0A
15V
0A
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
20A
V GE =20V
IC =150A
2.5V
2.0V
IC =75A
1.5V
IC =37.5A
1.0V
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
100ns
tf
t d(off)
100ns
tf
tr
t d(on)
t d(on)
tr
10ns
0A
40A
80A
10ns
120A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 5Ω,
Dynamic test circuit in Figure E)
5Ω
10Ω
15Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
t d(off)
100ns
tr
tf
t d(on)
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 75A, RG=5Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.2mA)
6
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
*) E on a nd E ts include losses
Ets*
12.0mJ
Eon*
8.0mJ
Eoff
4.0mJ
d ue to diode re co ve ry
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery
0A
20A
40A
60A
4.0m J
E on *
2.0m J
E off
0Ω
80A 100A 120A 140A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 5Ω,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
2.0mJ
Eon*
1.0mJ
75°C
8m J
E on *
6m J
E ts *
4m J
E off
2m J
0m J
300V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 75A, RG = 5Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
15Ω
due to diode recovery
Ets*
Eoff
50°C
10Ω
*) E on and E ts include losses
4.0mJ
0.0mJ
25°C
5Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
5.0mJ
E, SWITCHING ENERGY LOSSES
6.0m J
0.0m J
0.0mJ
3.0mJ
E ts *
8.0m J
350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 75A, RG = 5Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.1 Dec-04
TrenchStop Series
IGW75N60T
q
VGE, GATE-EMITTER VOLTAGE
C iss
c, CAPACITANCE
1 5V
120 V
1 0V
48 0V
1nF
C oss
5V
C rss
100pF
0V
0nC
1 00n C
20 0nC
30 0nC
0V
400 nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=75 A)
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
1000A
750A
500A
tSC,
250A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Power Semiconductors
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.1 Dec-04
TrenchStop Series
IGW75N60T
q
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
-1
10 K/W
0.2
0.1
0.05
-2
10 K/W
R,(K/W)
0.1968
0.0733
0.0509
0.02 0.0290
0.01 R 1
τ, (s)
0.115504
0.009340
0.000823
0.000119
R2
C1= τ1/R1
C2=τ2/R2
single pulse
-3
10 K/W
1µs
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
Power Semiconductors
9
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
dimensions
TO-247AC
symbol
[mm]
min
max
min
max
A
4.78
5.28
0.1882
0.2079
B
2.29
2.51
0.0902
0.0988
C
1.78
2.29
0.0701
0.0902
D
1.09
1.32
0.0429
0.0520
E
1.73
2.06
0.0681
0.0811
F
2.67
3.18
0.1051
0.1252
G
0.76 max
20.80
21.16
0.8189
0.8331
K
15.65
16.15
0.6161
0.6358
L
5.21
5.72
0.2051
0.2252
M
19.81
20.68
0.7799
0.8142
N
3.560
4.930
0.1402
0.1941
Q
10
0.0299 max
H
∅P
Power Semiconductors
[inch]
3.61
6.12
0.1421
6.22
0.2409
0.2449
Rev. 2.1 Dec-04
IGW75N60T
q
TrenchStop Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Rev. 2.1 Dec-04
TrenchStop Series
IGW75N60T
q
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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please contact your nearest Infineon Technologies Office.
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systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.1 Dec-04