IKA15N60T q TrenchStop® Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G E P-TO-220-3-31 (TO-220 FullPak) Applications: • Air Condition • Inverters Type IKA15N60T VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 15A 1.5V 175°C K15T60 P-TO-220-3-31 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value Unit 600 V A TC = 25°C 14.7 TC = 100°C 8.9 Pulsed collector current, tp limited by Tjmax ICpul s 45 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 45 Diode forward current, limited by Tjmax IF TC = 25°C 15.5 TC = 100°C 9 Diode pulsed current, tp limited by Tjmax IFpul s 45 Gate-emitter voltage VGE ±20 V tSC 5 µs Power dissipation TC = 25°C Ptot 35.7 W Operating junction temperature Tj -40...+175 °C Storage temperature Solder temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Isolation Voltage Tstg -55...+175 2) Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: Power Semiconductors 260 Visol 2500 Vr m s <1000; time between short circuits: >1s. 1 Rev. 2.1 July 06 IKA15N60T q TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 4.2 K/W RthJCD 4.8 RthJA 80 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 °C - 1.5 2.05 T j =1 7 5° C - 1.9 - T j =2 5 °C - 1.65 2.05 T j =1 7 5° C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 15 A V G E = 0V , I F = 1 5 A Gate-emitter threshold voltage VGE(th) I C = 21 0µ A , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 °C - - 40 T j =1 7 5° C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 15 A - 8.7 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 860 - Output capacitance Coss V G E = 0V , - 55 - Reverse transfer capacitance Crss f= 1 MH z - 24 - Gate charge QGate V C C = 48 0 V, I C =1 5 A - 87 - nC - 7 - nH - 137.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C ≤ 5 µs V C C = 4 0 0 V, T j ≤ 150°C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.1 July 06 IKA15N60T q TrenchStop® Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 11 - - 188 - - 50 - - 0.22 - - 0.35 - - 0.57 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 1 5 A, V G E = 0 /1 5 V, R G = 15 Ω, 1) L σ =1 5 4n H, 1) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5 °C , - 34 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 0.24 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ µs - 10.4 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 718 - A/µs ns mJ Anti-Parallel Diode Characteristic Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 15 - - 212 - - 79 - - 0.34 - - 0.47 - - 0.81 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 7 5° C, V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , RG= 15 Ω 1) L σ =1 5 4n H, 1) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 7 5° C - 140 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 1.0 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ µs - 14.7 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 495 - A/µs ns mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.1 July 06 IKA15N60T q TrenchStop® Series tp=2µs 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT TC=80°C 20A TC=110°C Ic 10A 100Hz 50µs 1A 1ms 10ms DC Ic 0A 10Hz 10µs 10A 0.1A 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 15Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 30W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 35W 25W 20W 15W 10W 10A 5A 5W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.1 July 06 TrenchStop® Series IKA15N60T q 40A 40A 30A 35A V GE =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 35A 15V 25A 13V 11V 20A 9V 15A 7V 10A 5A 15V 13V 25A 11V 20A 9V 15A 7V 10A 0A 0V 1V 2V 3V 0V 35A 30A 25A 20A 15A 10A T J = 1 7 5 °C 5A 2 5 °C 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 30A 5A 0A 0A V GE =20V 2.5V IC =30A 2.0V 1.5V IC =15A 1.0V IC =7.5A 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.1 July 06 TrenchStop® Series IKA15N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns 100ns tf tr t d(on) tr 1ns 0A 5A 10A 15A 20A 10ns 2 5A 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 15Ω, Dynamic test circuit in Figure E) 20Ω 30Ω 40Ω 50Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf t d(on) 10ns VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V m ax. typ. 5V 4V m in. 3V 2V 1V tr 25°C 50°C 75°C 0V -50°C 100°C 125°C 15 0°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA) 6 Rev. 2.1 July 06 TrenchStop® Series 1.6 mJ *) E on an d E ts in c lu d e lo s s es 1 .6m J *) E on and E ts include losses due to diode recovery E ts * 1 .2m J E off 0 .8m J E on * 0 .4m J E, SWITCHING ENERGY LOSSES d u e to d io de re c ov e ry E, SWITCHING ENERGY LOSSES IKA15N60T q E ts* 1.4 mJ 1.2 mJ 1.0 mJ 0.8 mJ 0.6 mJ E off 0.4 mJ 0 .0m J 0A 5A 10A 1 5A 20 A 0.2 mJ 25 A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 15Ω, Dynamic test circuit in Figure E) E on* 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) 0.9mJ 1.2m J *) E on and E ts include losses E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 0.8mJ 0.7mJ 0.6mJ E ts* 0.5mJ 0.4mJ E off 0.3mJ 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * E on* 0.2mJ 25°C due to diode recovery 1.0m J 50°C 0.0m J 300V 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG = 15Ω, Dynamic test circuit in Figure E) Power Semiconductors 350V 400V 450V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 15A, RG = 15Ω, Dynamic test circuit in Figure E) 7 Rev. 2.1 July 06 IKA15N60T q TrenchStop® Series 15V C iss 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 1nF 480V 10V 100pF C oss 5V C rss 0V 0nC 20nC 40nC 60nC 80nC 10pF 100nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) 0V 10V 20V 30V 40V 50V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 200A 150A 100A 50A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.1 July 06 IKA15N60T q TrenchStop® Series D=0.5 0 10 K/W ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0.2 0.1 0.05 0.02 -1 10 K/W τ, (s) R,(K/W) 1.634 1.541 0.423 0.223 0.236 0.122 4.13 1.00 3.83*10-2 3.26*10-3 4.82*10-4 6.64*10-5 R1 R2 0.01 single pulse C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 0 10 K/W 0.2 0.1 0.05 0.02 0.01 -1 10 K/W R,(K/W) 1.7757 1.4115 0.5014 0.3862 0.445 0.3188 τ, (s) 1.11*10-1 2.552*10-2 3.914*10-3 4.92*10-4 7.19*10-5 7.4*10-6 R1 single pulse 6 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -2 10µs 100µs 1ms 10ms 100ms 1s 10 K/W 10s tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) TJ=175°C 160ns 120ns TJ=25°C 80ns 40ns 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E) Power Semiconductors 9 10s 0.8µC 0.6µC T J=25°C 0.4µC 0.2µC 0.0µC 400A/µs 800A/µs 1s T J=175°C 1.0µC Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 10ms 100ms tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 200ns 0ns 400A/µs 10µs 100µs 1ms 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E) Rev. 2.1 July 06 TrenchStop® Series T J =175°C -700A/µs 14A 12A 10A T J =25°C 8A 6A 4A 2A 0A 400A/µs 600A/µs dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 16A IKA15N60T q T J=175°C -600A/µs -500A/µs T J=25°C -400A/µs -300A/µs -200A/µs -100A/µs 0A/µs 400A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E) 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E) VF, FORWARD VOLTAGE IF, FORWARD CURRENT 40A 30A 20A TJ=25°C 175°C 10A 0A 0V 1V I F =30A 1.5V 15A 10 7.5A 1.0V 0.5V 0.0V 0°C 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 2.0V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.1 July 06 TrenchStop® Series IKA15N60T q PG-TO220-3-31 Please refer to mounting instructions Power Semiconductors 11 Rev. 2.1 July 06 IKA15N60T q TrenchStop® Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH an d Stray capacity C σ =40pF. Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.1 July 06 TrenchStop® Series IKA15N60T q Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 7/10/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.1 July 06