AON6764 30V N-Channel SRFET General Description Product Summary VDS • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 85A RDS(ON) (at VGS=10V) < 2.8mΩ RDS(ON) (at VGS=4.5V) < 3.45mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AON6764 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy L=0.05mH VDS Spike C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2015 37 42 A EAS 44 mJ VSPIKE 36 V 42 Steady-State Steady-State W 17 6.2 W 4 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 30 PD TA=25°C V 190 IDSM TA=70°C ±12 60 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C C Maximum 30 RθJA RθJC -55 to 150 Typ 15 40 2.4 www.aosmd.com °C Max 20 50 3 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250µA 1.1 TJ=125°C IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance Rg Gate resistance V 2.3 2.8 3.4 4.1 3.45 mΩ 0.7 V 30 A 0.5 Diode Forward Voltage Crss nA 1.9 167 Forward Transconductance Output Capacitance ±100 2.8 gFS VGS=0V, VDS=15V, f=1MHz f=1MHz 0.9 mA 1.5 VGS=4.5V, ID=20A VSD Coss V 100 VGS=10V, ID=20A VDS=5V, ID=20A Units 0.5 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ S 2120 pF 700 pF 69 pF 1.8 2.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 37 Qg(4.5V) Total Gate Charge 16.8 nC 5 nC VGS=10V, VDS=15V, ID=20A nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.9 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 3.5 ns 36 ns 6 ns IF=20A, dI/dt=500A/µs 15.5 ns nC 33 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2015 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 4.5V 80 80 3V 60 ID(A) ID (A) 125°C 60 10V 40 25°C 40 VGS=2.5V 20 20 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 1.8 Normalized On-Resistance 5 4 RDS(ON) (mΩ) 2 VGS=4.5V 3 2 VGS=10V 1 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 0 5 10 15 20 25 25 50 75 100 125 150 175 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 10 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 6 IS (A) RDS(ON) (mΩ) 8 125°C 25°C 1.0E-02 4 1.0E-03 2 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2000 1500 500 0 Crss 0 0 10 20 30 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 15 20 25 30 RDS(ON) limited 10µs 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 400 10.0 10 10 500 Power (W) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Coss 1000 2 ZθJC Normalized Transient Thermal Resistance Ciss 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.00001 0.0001 0.001 100 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2015 www.aosmd.com Page 4 of 6 50 100 40 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 60 40 20 0 0 0 25 50 75 100 125 0 150 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2015 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6