Datasheet

AON6756
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
30V
36A
RDS(ON) (at VGS=10V)
< 2.4mΩ
RDS(ON) (at VGS = 4.5V)
< 4mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN5X6
Top View
VDS
ID (at VGS=10V)
D
Top View
Bottom View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current G
C
V
A
144
36
IDSM
TA=70°C
±20
28
IDM
TA=25°C
Units
V
36
ID
TC=100°C
Maximum
30
A
32
Avalanche Current C
IAS
60
A
Avalanche energy L=0.05mH C
EAS
90
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.2.0: July 2014
7.3
Steady-State
Steady-State
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
-55 to 150
Typ
14
40
1.1
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°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
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AON6756
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
100
1.4
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
tD(on)
nA
2.4
V
2
2.4
2.6
3.2
2.8
4
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.7
mΩ
mΩ
S
0.6
V
36
A
2796
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
100
90
VGS=0V, VDS=15V, f=1MHz
mA
1.7
0.39
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
0.5
TJ=125°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
pF
1200
pF
165
pF
1.5
2.3
Ω
46.8
64
nC
22.3
30
nC
8.4
nC
Gate Drain Charge
8.6
nC
Turn-On DelayTime
9.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
6.3
ns
35.8
ns
tf
Turn-Off Fall Time
12.3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
20
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
40
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: July 2014
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Page 2 of 6
AON6756
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4V
VDS=5V
3.5V
80
80
4.5V
60
60
ID(A)
ID (A)
10V
40
40
125°C
VGS=3V
20
20
25°C
0
0
0
1
2
3
4
0
5
4
2
3
4
5
6
1.4
Normalized On-Resistance
VGS=4.5V
3
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
VGS=10V
1
VGS=10V
ID=20A
1.2
1
VGS=4.5V
ID=20A
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
1.0E+01
125°C
ID=20A
7
1.0E+00
1.0E-01
5
IS (A)
RDS(ON) (mΩ)
6
125°C
4
1.0E-02
25°C
3
1.0E-03
2
1.0E-04
25°C
1
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: July 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6756
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4500
3500
Capacitance (pF)
VGS (Volts)
4000
VDS=15V
ID=20A
8
6
4
Ciss
3000
2500
2000
1500
Coss
1000
2
500
0
Crss
0
0
10
20
30
40
50
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
500
10µs
RDS(ON)
limited
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
400
10µs
Power (W)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
5
TJ(Max)=150°C
TC=25°C
300
200
100
10
100
0
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: July 2014
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Page 4 of 6
AON6756
100
50
80
40
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
20
30
20
10
0
0
0
25
50
75
100
125
150
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: July 2014
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Page 5 of 6
AON6756
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: July 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6