Datasheet

AON6486
100V N-Channel MOSFET
General Description
Product Summary
The AON6486 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
100V
10A
RDS(ON) (at VGS=10V)
< 140mΩ
RDS(ON) (at VGS = 4.5V)
< 152mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
V
A
13
2.5
IDSM
TA=70°C
±20
6
IDM
TA=25°C
Continuous Drain
Current
Units
V
10
ID
TC=100°C
Maximum
100
A
2
Avalanche Current C
IAS, IAR
10
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
5
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: October 2010
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.5
TJ, TSTG
Symbol
t ≤ 10s
W
12.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
31
PD
-55 to 150
Typ
17
44
3.4
°C
Max
21
53
4
Units
°C/W
°C/W
°C/W
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AON6486
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
Max
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
13
Units
V
VDS=100V, VGS=0V
VGS(th)
100
nA
2.2
2.8
V
116
140
225
270
VGS=4.5V, ID=3A
121
152
mΩ
17
1
V
12
A
VGS=10V, ID=4.5A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
A
0.76
mΩ
S
350
445
540
pF
18
27
35
pF
9
16
23
pF
1
2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8
10.3
13
nC
Qg(4.5V) Total Gate Charge
4
5.1
6.5
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=4.5A
VGS=10V, VDS=50V, RL=8.6Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs
1.6
nC
2.4
nC
8
ns
3
ns
17
ns
4.5
IF=4.5A, dI/dt=500A/µs
ns
14.5
21
27.5
68
97
126
ns
nC
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: October 2010
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Page 2 of 6
AON6486
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
15
VDS=5V
10V
6V
10
ID(A)
4V
ID (A)
10
4.5V
VGS=3.5V
5
5
125°C
0
0
0
1
2
3
4
0
5
1
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
180
Normalized On-Resistance
2.4
160
RDS(ON) (mΩ )
25°C
140
VGS=4.5V
120
VGS=10V
2.2
VGS=10V
ID=4.5A
2
1.8
17
5
2
VGS=4.5V
10
1.6
1.4
1.2
ID=3A
1
0.8
100
0
2
4
6
8
0
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
280
ID=4.5A
260
1.0E+01
240
40
1.0E+00
125°C
200
IS (A)
RDS(ON) (mΩ )
220
180
1.0E-01
1.0E-02
125°C
25°C
160
1.0E-03
140
1.0E-04
120
25°C
1.0E-05
100
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: October 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6486
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
10
VDS=50V
ID=4.5A
600
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
500
400
300
200
Coss
2
Crss
100
0
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
12
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
200
100.0
10µs
10µs
100µs
RDS(ON)
limited
1.0
160
Power (W)
10.0
ID (Amps)
20
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.1
17
5
2
10
120
80
40
0.0
0.01
TJ(Max)=150°C
TC=25°C
1
10
VDS (Volts)
100
1000
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: October 2010
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Page 4 of 6
AON6486
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
10
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=100°C
TA=150°C
TA=125°C
1
40
30
20
10
0
1
10
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability
(Note C)
100
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
12
TA=25°C
10
1000
8
Power (W)
Current rating ID(A)
150
6
17
5
2
10
100
4
10
2
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=53°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: October 2010
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Page 5 of 6
AON6486
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: October 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6