AON6486 100V N-Channel MOSFET General Description Product Summary The AON6486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 100V 10A RDS(ON) (at VGS=10V) < 140mΩ RDS(ON) (at VGS = 4.5V) < 152mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 13 2.5 IDSM TA=70°C ±20 6 IDM TA=25°C Continuous Drain Current Units V 10 ID TC=100°C Maximum 100 A 2 Avalanche Current C IAS, IAR 10 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 5 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: October 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD -55 to 150 Typ 17 44 3.4 °C Max 21 53 4 Units °C/W °C/W °C/W Page 1 of 6 AON6486 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 Max 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 13 Units V VDS=100V, VGS=0V VGS(th) 100 nA 2.2 2.8 V 116 140 225 270 VGS=4.5V, ID=3A 121 152 mΩ 17 1 V 12 A VGS=10V, ID=4.5A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance A 0.76 mΩ S 350 445 540 pF 18 27 35 pF 9 16 23 pF 1 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 10.3 13 nC Qg(4.5V) Total Gate Charge 4 5.1 6.5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=4.5A VGS=10V, VDS=50V, RL=8.6Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs 1.6 nC 2.4 nC 8 ns 3 ns 17 ns 4.5 IF=4.5A, dI/dt=500A/µs ns 14.5 21 27.5 68 97 126 ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: October 2010 www.aosmd.com Page 2 of 6 AON6486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 VDS=5V 10V 6V 10 ID(A) 4V ID (A) 10 4.5V VGS=3.5V 5 5 125°C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 180 Normalized On-Resistance 2.4 160 RDS(ON) (mΩ ) 25°C 140 VGS=4.5V 120 VGS=10V 2.2 VGS=10V ID=4.5A 2 1.8 17 5 2 VGS=4.5V 10 1.6 1.4 1.2 ID=3A 1 0.8 100 0 2 4 6 8 0 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 280 ID=4.5A 260 1.0E+01 240 40 1.0E+00 125°C 200 IS (A) RDS(ON) (mΩ ) 220 180 1.0E-01 1.0E-02 125°C 25°C 160 1.0E-03 140 1.0E-04 120 25°C 1.0E-05 100 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: October 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 VDS=50V ID=4.5A 600 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 500 400 300 200 Coss 2 Crss 100 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 200 100.0 10µs 10µs 100µs RDS(ON) limited 1.0 160 Power (W) 10.0 ID (Amps) 20 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 0.1 17 5 2 10 120 80 40 0.0 0.01 TJ(Max)=150°C TC=25°C 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: October 2010 www.aosmd.com Page 4 of 6 AON6486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C 10 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=100°C TA=150°C TA=125°C 1 40 30 20 10 0 1 10 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 100 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 12 TA=25°C 10 1000 8 Power (W) Current rating ID(A) 150 6 17 5 2 10 100 4 10 2 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=53°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: October 2010 www.aosmd.com Page 5 of 6 AON6486 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: October 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6