AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) 100V 11A RDS(ON) (at VGS=10V) < 140mΩ RDS(ON) (at VGS = 4.5V) < 152mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current A 2.5 A 2 Avalanche Current C IAS, IAR 10 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 5 mJ Power Dissipation B Junction and Storage Temperature Range 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 23 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 45 PD TC=100°C TA=25°C Power Dissipation A 1/6 V 24 IDSM TA=70°C ±20 8 IDM TA=25°C Units V 11 ID TC=100°C C Maximum 100 -55 to 175 Typ 17 55 2.7 °C Max 25 60 3.3 Units °C/W °C/W °C/W www.freescale.net.cn AOD478/AOI478 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 Max 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 24 Units V VDS=100V, VGS=0V IGSS µA 100 nA 2.2 2.8 V 116 140 225 270 VGS=4.5V, ID=3A 121 152 mΩ 17 1 V 12 A VGS=10V, ID=4.5A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance A 0.76 mΩ S 350 445 540 pF 18 29 35 pF 9 16 23 pF 1 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 10.3 13 nC Qg(4.5V) Total Gate Charge 4 5.1 6.5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=4.5A VGS=10V, VDS=50V, RL=8.6Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs 1.6 nC 2.4 nC 8 ns 3 ns 17 ns 4.5 IF=4.5A, dI/dt=500A/µs ns 14.5 21 27.5 68 97 126 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD478/AOI478 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 VDS=5V 10V 4V 12 4.5V 10 9 ID(A) ID (A) 6V 6 VGS=3.5V 5 125°C 3 25°C 0 0 0 0 1 2 3 4 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 180 Normalized On-Resistance 2.6 160 RDS(ON) (mΩ Ω) 1 5 140 VGS=4.5V 120 VGS=10V 2.4 2.2 VGS=10V ID=4.5A 2 17 5 2 VGS=4.5V 10 1.8 1.6 1.4 1.2 ID=3A 1 0.8 100 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 280 1.0E+01 ID=4.5A 260 1.0E+00 240 125°C 40 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 220 200 180 1.0E-02 25°C 1.0E-03 160 140 1.0E-04 120 25°C 1.0E-05 100 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD478/AOI478 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 VDS=50V ID=4.5A 600 Ciss 500 Capacitance (pF) VGS (Volts) 8 6 4 400 300 200 Coss 2 Crss 100 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 400 100.0 TJ(Max)=175°C TC=25°C 360 10µs 10.0 320 10µs RDS(ON) limited 1.0 100µs DC 0.1 280 Power (W) ID (Amps) 100 1ms 10ms 17 5 2 10 240 200 160 120 TJ(Max)=175°C TC=25°C 80 40 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 Zθ JC Normalized Transient Thermal Resistance 1 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.3°C/W PD 0.1 Ton T 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD478/AOI478 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=100°C TA=150°C 10 TA=125°C 40 30 20 10 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 10000 15 TA=25°C 12 1000 Power (W) Current rating ID(A) 50 9 6 17 5 2 10 100 10 3 1 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 175 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD478/AOI478 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn