Datasheet

AOTF4185
40V P-Channel MOSFET
General Description
Product Summary
The AOTF4185 combines advanced trench MOSFET 40V technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
-40V
-34A
RDS(ON) (at VGS=-10V)
< 16mΩ
RDS(ON) (at VGS =-4.5V)
< 20mΩ
VDS
100% UIS Tested
100% Rg Tested
TO220F
Top View
D
Bottom View
G
G
D
S
S
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±20
V
-34
ID
TC=100°C
Maximum
-40
-27
A
IDM
-100
Avalanche Current C
IAS, IAR
-42
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
88
mJ
Power Dissipation B
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AD
Maximum Junction-to-Case
Symbol
RθJA
RθJC
Rev.2.0: May 2013
33
PD
TC=100°C
t ≤ 10s
Steady-State
W
16
-55 to 175
Typ
10
3
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°C
Max
13
4.5
Units
°C/W
°C/W
Page 1 of 6
AOTF4185
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-40
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-120
nA
-2.5
V
13
16
19
23
VGS=-4.5V, ID=-15A
16
20
50
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-20V, f=1MHz
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=-10V, VDS=-20V, ID=-20A
2.5
mΩ
S
V
-20
A
2550
pF
280
pF
pF
Ω
4
6
42
55
18.6
nC
nC
7
nC
8.6
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
25
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
75
VGS=-10V, VDS=-20V, RL=1.0Ω,
RGEN=3Ω
mΩ
-1
190
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qg(4.5V)
A
-0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.85
VGS=-10V, ID=-20A
Coss
Max
V
VDS=-40V, VGS=0V
IGSS
RDS(ON)
Typ
9.4
ns
20
ns
55
ns
30
ns
33
ns
nC
A. The value of RθJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2013
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Page 2 of 6
AOTF4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
-10V
VDS=-5V
-4.5V
100
80
-4V
60
-ID(A)
-ID (A)
80
60
-3.5V
40
40
125°C
20
20
25°C
VGS=-3V
0
0
0
1
2
3
4
0
5
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
2
18
VGS=-4.5V
RDS(ON) (mΩ
Ω)
1
16
14
12
VGS=-10V
1.8
VGS=-10V
ID=-20A
1.6
17
5
2
10
VGS=-4.5V
1.4
1.2
ID=-15A
1
0.8
10
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
35
1.0E+02
ID=-20A
1.0E+01
30
40
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
25
125°C
1.0E-01
1.0E-02
20
25°C
1.0E-03
15
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: May 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOTF4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=-20V
ID=-20A
3500
8
Capacitance (pF)
-VGS (Volts)
3000
6
4
Ciss
2500
2000
1500
Coss
1000
2
500
0
Crss
0
0
5
10
15
20
25
30
35
40
45
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
35
40
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
1000.0
10µs
10µs
100µs
RDS(ON)
limited
10.0
1ms
10ms
1.0
DC
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
800
Power (W)
100.0
-ID (Amps)
10
17
5
2
10
600
400
200
0.0
0
0.01
0.1
1
10
-VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4.5°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: May 2013
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Page 4 of 6
AOTF4185
50
50
40
40
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
30
20
10
10
0
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note B)
175
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note B)
175
IAR (A) Peak Avalanche Current
1000
TA=25°C
100
10
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 14: Single Pulse Avalanche capability
Rev.2.0: May 2013
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Page 5 of 6
AOTF4185
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.2.0: May 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6