DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors Product data sheet High voltage double diode BAW101S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 50 ns 1 anode 1 • High continuous reverse voltage: 300 V 2 n.c. • Electrically insulated diodes. 3 cathode 2 4 anode 2 APPLICATIONS 5 n.c. • High voltage switching 6 cathode 1 • Automotive • Communication. DESCRIPTION handbook, halfpage The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. 6 5 4 1 2 3 6 5 4 1 2 3 MARKING TYPE NUMBER BAW101S MARKING CODE(1) Top view K2∗ MBL892 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. Fig.1 ∗ = W: Made in China. 2003 May 13 2 Simplified outline (SOT363) and symbol. NXP Semiconductors Product data sheet High voltage double diode BAW101S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage VRRM repetitive peak reverse voltage − 300 V − 600 V − 300 V series connection − 600 V single diode loaded; note 1; see Fig.2 − 250 mA double diode loaded; note 1; see Fig.2 − 140 mA − 625 mA series connection IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; t = 1 µs − 4.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VBR(R) reverse breakdown voltage IR = 100 µA 300 − V VF forward voltage IF = 100 mA; note 1 − 1.1 V IR reverse current VR = 250 V − 150 nA VR = 250 V; Tamb = 150 °C − 50 µA 50 ns 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; − RL = 100 Ω; measured at IR = 3 mA Cd diode capacitance VR = 0 V; f = 1 MHz Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. 2003 May 13 3 − NXP Semiconductors Product data sheet High voltage double diode BAW101S THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point note 1 255 K/W Rth j-a thermal resistance from junction to ambient note 2 357 K/W Notes 1. One or more diodes loaded. 2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2. GRAPHICAL DATA MLE057 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 (2) 100 0 50 (1) Single diode loaded. 100 200 150 Tamb (°C) 1 VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current as a function of ambient temperature. 2003 May 13 0 (2) Double diode loaded. Device mounted on an FR4 printed-circuit board. Cathode-lead mounting pad = 1 cm2. Fig.2 (3) 200 0 0 (2) 400 (1) Fig.3 4 Forward current as a function of forward voltage. NXP Semiconductors Product data sheet High voltage double diode BAW101S MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 102 10 103 104 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. MLE058 102 handbook, halfpage IR (µA) Cd (pF) 10 0.5 (1) (2) 1 0.4 10−1 0.3 10−2 MLE059 0.6 handbook, halfpage 0 50 100 150 Tj (°C) 0.2 200 0 2 (1) VR = VRMAX: maximum values. (2) VR = VRMAX: typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2003 May 13 5 4 6 8 VR (V) 10 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High voltage double diode BAW101S MLE060 400 handbook, halfpage VR (V) 300 200 100 0 0 Fig.7 50 100 150 200 Tamb (°C) Maximum permissible continuous reverse voltage as a function of ambient temperature. 2003 May 13 6 NXP Semiconductors Product data sheet High voltage double diode BAW101S PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2003 May 13 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet High voltage double diode BAW101S DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2003 May 13 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2003 May 13 Document order number: 9397 750 11148