DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAW101S High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 50 ns 1 anode 1 • High continuous reverse voltage: 300 V 2 n.c. • Electrically insulated diodes. 3 cathode 2 4 anode 2 APPLICATIONS 5 n.c. • High voltage switching 6 cathode 1 • Automotive • Communication. DESCRIPTION handbook, halfpage The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. 6 5 4 1 2 3 6 5 4 1 2 3 MARKING TYPE NUMBER BAW101S MARKING CODE(1) Top view K2∗ MBL892 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. Fig.1 ∗ = W: Made in China. 2003 May 13 2 Simplified outline (SOT363) and symbol. Philips Semiconductors Product specification High voltage double diode BAW101S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage VRRM repetitive peak reverse voltage − 300 V − 600 V − 300 V series connection − 600 V single diode loaded; note 1; see Fig.2 − 250 mA double diode loaded; note 1; see Fig.2 − 140 mA series connection IF continuous forward current IFRM repetitive peak forward current − 625 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; t = 1 µs − 4.5 A Ptot total power dissipation − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VBR(R) reverse breakdown voltage IR = 100 µA 300 − V VF forward voltage IF = 100 mA; note 1 − 1.1 V IR reverse current VR = 250 V − 150 nA VR = 250 V; Tamb = 150 °C − 50 µA 50 ns 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; − RL = 100 Ω; measured at IR = 3 mA Cd diode capacitance VR = 0 V; f = 1 MHz Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. 2003 May 13 3 − Philips Semiconductors Product specification High voltage double diode BAW101S THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point note 1 255 K/W Rth j-a thermal resistance from junction to ambient note 2 357 K/W Notes 1. One or more diodes loaded. 2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2. GRAPHICAL DATA MLE057 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 (2) 100 0 50 (1) Single diode loaded. 100 200 150 Tamb (°C) 1 VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current as a function of ambient temperature. 2003 May 13 0 (2) Double diode loaded. Device mounted on an FR4 printed-circuit board. Cathode-lead mounting pad = 1 cm2. Fig.2 (3) 200 0 0 (2) 400 (1) Fig.3 4 Forward current as a function of forward voltage. Philips Semiconductors Product specification High voltage double diode BAW101S MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 102 10 103 104 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. MLE058 102 handbook, halfpage IR (µA) Cd (pF) 10 0.5 (1) (2) 1 0.4 10−1 0.3 10−2 MLE059 0.6 handbook, halfpage 0 50 100 150 Tj (°C) 0.2 200 0 2 (1) VR = VRMAX: maximum values. (2) VR = VRMAX: typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2003 May 13 5 4 6 8 VR (V) 10 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High voltage double diode BAW101S MLE060 400 handbook, halfpage VR (V) 300 200 100 0 0 Fig.7 50 100 200 150 Tamb (°C) Maximum permissible continuous reverse voltage as a function of ambient temperature. 2003 May 13 6 Philips Semiconductors Product specification High voltage double diode BAW101S PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2003 May 13 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification High voltage double diode BAW101S DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 May 13 8 Philips Semiconductors Product specification High voltage double diode BAW101S NOTES 2003 May 13 9 Philips Semiconductors Product specification High voltage double diode BAW101S NOTES 2003 May 13 10