DISCRETE SEMICONDUCTORS DATA SHEET BAS321 General purpose diode Product data sheet Supersedes data of 1999 Feb 09 2004 Jan 26 NXP Semiconductors Product data sheet General purpose diode BAS321 FEATURES PINNING • Small plastic SMD package PIN • Switching speed: max. 50 ns 1 cathode • General application 2 anode DESCRIPTION • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. handbook, halfpage 1 2 APPLICATIONS • General purpose switching in e.g. surface mounted circuits. MAM406 Marking code: A7 The marking bar indicates the cathode. DESCRIPTION The BAS321 is a general purpose diode fabricated in planar technology and encapsulated in a plastic SOD323 package. Fig.1 Simplified outline (SOD323) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BAS321 − DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 250 V VR continuous reverse voltage − 200 V IF continuous forward current see Fig.2; note 1 − 250 mA IFRM repetitive peak forward current tp < 0.5 ms; δ ≤ 0.25 − 625 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.7 A Ptot total power dissipation − 300 mW Tstg storage temperature Tamb = 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed circuit-board. 2004 Jan 26 2 NXP Semiconductors Product data sheet General purpose diode BAS321 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.3 reverse current IF = 100 mA 1 V IF = 200 mA 1.25 V VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-s) thermal resistance from junction to soldering point Ts = 90°C; note 1 130 K/W Rth(j-a) thermal resistance from junction to ambient note 2 366 K/W Notes 1. Soldering point of cathode tab. 2. Device mounted on an FR4 printed circuit board. 2004 Jan 26 3 NXP Semiconductors Product data sheet General purpose diode BAS321 GRAPHICAL DATA MBK927 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 100 200 (1) 0 0 0 50 100 150 200 Tamb (°C) 1 (3) 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Jan 26 4 104 NXP Semiconductors Product data sheet General purpose diode BAS321 MBG381 2 10halfpage handbook, Cd (pF) IR (µA) 0.8 10 (1) 1 (2) 0.6 1 10 MBG447 1.0 handbook, halfpage 0.4 10 2 100 0 Tj (oC) 0.2 0 200 2 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. MBK926 300 handbook, halfpage VR (V) 200 100 0 0 Fig.7 2004 Jan 26 50 100 150 200 Tamb (°C) Maximum permissible continuous reverse voltage as a function of the ambient temperature. 5 4 6 VR (V) 8 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet General purpose diode BAS321 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns; Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance) Fig.8 Reverse recovery time and waveforms. 2004 Jan 26 t rr 6 output signal NXP Semiconductors Product data sheet General purpose diode BAS321 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Jan 26 REFERENCES IEC JEDEC JEITA SC-76 7 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 NXP Semiconductors Product data sheet General purpose diode BAS321 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 26 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/02/pp9 Date of release: 2004 Jan 26 Document order number: 9397 750 12589