技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 EasyPACK模块采用第三代高速沟槽栅/场终止IGBT和第三代发射极控制二极管 带有pressfit压接管脚和温度检测NTC EasyPACKmodulewithfastTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC J VCES = 650V IC nom = 30A / ICRM = 60A 典型应用 • 三电平应用 • 电机传动 • 太阳能应用 • UPS系统 TypicalApplications • 3-Level-Applications • MotorDrives • SolarApplications • UPSSystems 电气特性 • 高速IGBTH3 • 低开关损耗 • ElectricalFeatures • HighSpeedIGBTH3 • LowSwitchingLosses • thinQHSiCSchottkydiode650V 机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 紧凑型设计 • PressFIT压接技术 • 集成的安装夹使安装坚固 MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • PressFITContactTechnology • Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 650 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 30 45 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 60 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 135 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat A A typ. max. 1,50 1,70 1,80 1,90 V V V 5,8 6,5 V 栅极阈值电压 Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,30 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,65 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,051 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGon = 33 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGon = 33 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGoff = 33 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGoff = 33 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 30 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, di/dt = 800 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 33 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,0 0,042 0,044 0,044 µs µs µs 0,038 0,044 0,044 µs µs µs 0,26 0,28 0,285 µs µs µs 0,042 0,06 0,065 µs µs µs Eon 0,88 1,10 1,15 mJ mJ mJ IC = 30 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3700 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 33 Ω Tvj = 150°C Eoff 0,67 0,84 0,91 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 160 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 1,05 1,10 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,10 K/W 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 5 µs, Tvj = 150°C td on tr td off tf Tvj op preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 2 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 650 V IF 30 A IFRM 60 A I²t 90,0 82,0 特征值/CharacteristicValues min. A²s A²s typ. max. 2,00 VF 1,60 1,55 1,50 Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 15,5 20,5 22,0 A A A IF = 30 A, - diF/dt = 800 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 1,10 1,90 2,20 µC µC µC IF = 30 A, - diF/dt = 800 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,18 0,34 0,41 mJ mJ mJ 正向电压 Forwardvoltage IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 30 A, - diF/dt = 800 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V 恢复电荷 Recoveredcharge 反向恢复损耗（每脉冲） Reverserecoveryenergy V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,25 1,35 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,35 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 3 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 IGBT,三电平/IGBT,3-Level 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 650 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 30 50 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 60 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 135 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat A A typ. max. 1,55 1,80 1,85 1,95 V V V 5,8 6,5 V 栅极阈值电压 Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,30 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,65 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,051 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGon = 20 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGon = 20 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGoff = 20 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 30 A, VCE = 300 V VGE = ±15 V RGoff = 20 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 30 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, di/dt = 830 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 20 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,0 0,03 0,03 0,031 µs µs µs 0,035 0,036 0,05 µs µs µs 0,175 0,19 0,20 µs µs µs 0,019 0,038 0,043 µs µs µs Eon 0,38 0,40 0,41 mJ mJ mJ IC = 30 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 5400 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 20 Ω Tvj = 150°C Eoff 0,42 0,64 0,71 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 160 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 1,05 1,10 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,10 K/W 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 150°C td on tr td off tf Tvj op preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 4 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 二极管,三电平/Diode,3-Level 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage VRRM Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C 650 V IF 8 A IFRM 16 A I²t 8,00 A²s 特征值/CharacteristicValues min. typ. max. 1,50 1,65 1,70 正向电压 Forwardvoltage IF = 8 A, VGE = 0 V IF = 8 A, VGE = 0 V Tvj = 25°C Tvj = 125°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 8 A, - diF/dt = 400 A/µs (Tvj=125°C) VR = 300 V VGE = 15 V Tvj = 25°C Tvj = 125°C IRM 6,30 6,80 A A 恢复电荷 Recoveredcharge IF = 8 A, - diF/dt = 400 A/µs (Tvj=125°C) VR = 300 V VGE = 15 V Tvj = 25°C Tvj = 125°C Qr 0,22 0,37 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 8 A, - diF/dt = 400 A/µs (Tvj=125°C) VR = 300 V VGE = 15 V Tvj = 25°C Tvj = 125°C Erec 0,01 0,01 mJ mJ VF V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 2,30 2,50 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 2,50 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 125 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 5 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 5,0 mm > 200 相对电痕指数 Comperativetrackingindex VISOL CTI min. 杂散电感,模块 Strayinductancemodule LsCE 储存温度 Storagetemperature Tstg -40 Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 重量 Weight G Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 6 kV 2,5 typ. max. 45 39 nH 125 °C 80 N g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 60 60 50 50 40 40 IC [A] IC [A] Tvj = 25°C Tvj = 125°C Tvj = 150°C 30 30 20 20 10 10 0 0,0 0,4 0,8 1,2 1,6 VCE [V] 2,0 2,4 0 2,8 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 0,0 3,0 4,0 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=33Ω,RGoff=33Ω,VCE=300V 60 3,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 50 2,5 40 2,0 E [mJ] IC [A] 2,0 VCE [V] 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 30 1,0 10 0,5 5 6 7 8 9 VGE [V] 10 11 0,0 12 preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 7 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 1,5 20 0 1,0 0 10 20 30 IC [A] 40 50 60 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=30A,VCE=300V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 8 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 7 ZthJH : IGBT 6 1 ZthJH [K/W] E [mJ] 5 4 3 0,1 2 i: 1 2 3 4 ri[K/W]: 0,0423 0,2043 0,4249 1,4785 τi[s]: 0,0005 0,005 0,05 0,2 1 0 0 40 80 120 160 200 RG [Ω] 240 280 320 0,01 0,001 360 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 0,01 0,1 t [s] 1 10 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=33,VCE=300V 60 0,5 Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec, Tvj = 125°C Erec, Tvj = 150°C 50 0,4 40 E [mJ] IF [A] 0,3 30 0,2 20 0,1 10 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 1,8 0,0 2,0 preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 8 0 10 20 30 IF [A] 40 50 60 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=30A,VCE=300V 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0,5 10 Erec, Tvj = 125°C Erec, Tvj = 150°C ZthJH : Diode 0,4 E [mJ] ZthJH [K/W] 0,3 0,2 1 0,1 i: 1 2 3 4 ri[K/W]: 0,1999 0,4286 0,8282 1,1437 τi[s]: 0,0005 0,005 0,05 0,2 0,0 0 40 80 120 160 200 RG [Ω] 240 280 0,1 0,001 320 输出特性IGBT,三电平（典型) outputcharacteristicIGBT,3-Level(typical) IC=f(VCE) VGE=15V 1 10 60 Tvj = 25°C Tvj = 125°C Tvj = 150°C 50 50 40 40 IC [A] IC [A] 0,1 t [s] 输出特性IGBT,三电平（典型) outputcharacteristicIGBT,3-Level(typical) IC=f(VCE) Tvj=150°C 60 30 20 10 10 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 VGE = 19 V VGE = 17 V VGE = 15 V VGE = 13 V VGE = 11 V VGE = 9 V 30 20 0 0,01 0,0 1,0 2,0 3,0 VCE [V] preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 9 4,0 5,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 传输特性IGBT,三电平(典型) transfercharacteristicIGBT,3-Level(typical) IC=f(VGE) VCE=20V 开关损耗IGBT,三电平（典型) switchinglossesIGBT,3-Level(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=20Ω,RGoff=20Ω,VCE=300V 60 1,5 Tvj = 25°C Tvj = 125°C Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 50 1,0 E [mJ] IC [A] 40 30 20 0,5 10 0 5 6 7 8 9 10 0,0 11 0 10 20 VGE [V] 开关损耗IGBT,三电平（典型) switchinglossesIGBT,3-Level(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=30A,VCE=300V 30 IC [A] 40 50 60 瞬态热阻抗IGBT,三电平 transientthermalimpedanceIGBT,3-Level ZthJC=f(t) 6 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 5 ZthJC : IGBT 1 ZthJC [K/W] E [mJ] 4 3 0,1 2 0,01 1 0 i: 1 2 3 4 ri[K/W]: 0,0423 0,2043 0,4249 1,4785 τi[s]: 0,0005 0,005 0,05 0,2 0 20 40 60 0,001 0,001 80 100 120 140 160 180 200 RG [Ω] preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 10 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 正向偏压特性二极管,三电平（典型) forwardcharacteristicofDiode,3-Level(typical) IF=f(VF) 开关损耗二极管,三电平（典型) switchinglossesDiode,3-Level(typical) Erec=f(IF) RGon=20Ω,VCE=300V 16 0,015 Tvj = 25°C Tvj = 125°C 14 Erec, Tvj = 125°C 12 0,010 E [mJ] IF [A] 10 8 6 0,005 4 2 0 0,0 0,4 0,8 1,2 VF [V] 1,6 2,0 开关损耗二极管,三电平（典型) switchinglossesDiode,3-Level(typical) Erec=f(RG) IF=8A,VCE=300V 0,000 2,4 0 2 4 6 8 IF [A] 10 12 14 16 瞬态热阻抗二极管,三电平 transientthermalimpedanceDiode,3-Level ZthJH=f(t) 0,015 10 Erec, Tvj = 125°C ZthJH : Diode E [mJ] ZthJH [K/W] 0,010 1 0,005 i: 1 2 3 4 ri[K/W]: 0,796 1,328 1,813 0,863 τi[s]: 0,003 0,015 0,09 0,4 0,000 0 20 40 60 0,1 0,001 80 100 120 140 160 180 200 RG [Ω] preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 11 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 120 140 160 preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 12 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines In fin e o n preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 13 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FS3L30R07W2H3F_B11 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill 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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CE dateofpublication:2014-07-22 approvedby:MB revision:3.1 14