Infrared Light Emitting Diodes LNA4905L GaAs Infrared Light Emitting Diode Unit : mm 5.7±0.2 For optical control equipment ■ Features φ5±0.2 2-1±0.15 ■ Absolute Maximum Ratings Ta=25°C 2-0.6±0.15 Parameter Power dissipation Forward current(DC) Pulse forward current * Symbol Ratings Unit PD 190 mW IF 100 mA IFP 1 A Reverse voltage(DC) VR 3 V Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C 4.4±0.3 1 12.0±1.0 14.0±1.0 1 5.7±0.2 2 Max. Not soldered • High output power, high-efficiency : (15 mW min.) • Quick response, high speed modulation (fC=30 MHz typ.) • Transparent epoxy resin package 0.6±0.15 2 1 2.54* Note 1. * : Indicates root dimensions of lead. 2. A dimension is as a reference figure as coming with no a public difference. 1 : Anode 2 : Cathode Note) * : f=100 Hz, Duty cycle=0.1% ■ Electro-optical Ta=25°C±3°C Parameter Symbol Conditions min typ Total power output PO IF=50 mA Peak emission wavelength λP IF=50 mA Spectral half band width ∆λ IF=50 mA 50 Forward voltage (DC) VF IF=100 mA 1.7 Reverse current (DC) IR VF=3 V Half-power angle θ The angle when the beam intensity is halved max 15 Unit mW 880 nm nm 2.1 10 15 V µA deg Note) 1. Cut-off frequency : 30 MHz 2. LED might radiate red light under large current drive. 1