Infrared Light Emitting Diodes LNA2904L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 10 mW/sr (min.) 1.0 For optical control systems Good radiant power output linearity with respect to input current High center radiant intensity 13.5±1.0 11.5±1.0 3.9±0.3 1.0 Emitted light spectrum suited for silicon photodetectors 2-1.0±0.15 2-0.6±0.15 Transparent epoxy resin package Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit PD 160 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 1.5 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 0.6±0.15 ø6.0±0.2 2.54 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Center radiant intensity Symbol Conditions min typ max 10 Unit Ie IF = 50mA mW/sr Peak emission wavelength λP IF = 50mA 950 nm Spectral half band width ∆λ IF = 50mA 50 nm Forward voltage (DC) VF IF = 100mA 1.35 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Half-power angle θ The angle in which radiant intencity is 50% 20 deg. 1.6 V 10 µA 1 LN2904L Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C Pulse forward current 40 20 0 – 25 0 20 40 60 80 10 –1 10 –2 10 –3 10 –2 100 IFP (A) 1 10 –1 Ambient temperature Ta (˚C ) (2) 10 3 50mA 10mA 0.8 0.4 Pulse forward current IFP (mA) λP — Ta 1000 0 40 120 10 –1 – 40 0 40 Relative radiant intensity (%) 920 120 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 940 80 Ambient temperature Ta (˚C ) IF = 50mA Peak emission wavelength λP (nm) 80 1 Ambient temperature Ta (˚C ) 100 960 5 ∆Ie — Ta 1.2 0 – 40 10 4 980 4 10 10 –1 10 2 3 IF = 100mA VF (V) 10 10 2 IF = 50mA Forward voltage Relative radiant intensity ∆Ie (1) 1 1 VF — Ta 10 2 10 –2 0 Forward voltage VF (V) 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 10 –1 10 –2 10 2 10 1 Duty cycle (%) ∆Ie — IFP 10 3 1 tw = 10µs f = 100Hz Ta = 25˚C Relative radiant intensity (%) 60 10 Relative radiant intensity ∆Ie Allowable forward current 80 Pulse forward current IFP (A) IF (mA) 10 2 100 IFP — VF 10 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm)