Infrared Light Emitting Diodes LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode Unit: mm Symbol Ratings Unit Power dissipation PD 80 mW Forward current (DC) IF 50 mA Pulse forward current * IFP 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C 0.9 0.5 R0.5 2− 0.5±0.15 2 Parameter 1.4±0.2 φ1.1 0.8 0.8 max. ■ Absolute Maximum Ratings Ta = 25°C 2.4 1.1 3.5±0.3 12 min. • High-power output, high-efficiency: PO = 9 mW min. • Emitted light spectrum suited for silicon photodetectors • Ultra-miniature, thin side-view type package • Long lifetime, high reliability 3.0±0.3 Not soldered 2.15 max. ■ Features 1.95±0.25 1.1 For optical control systems 0.3±0.15 1 2.54 1: Anode 2: Cathode Note) *: f = 100 Hz, Duty Cycle = 0.1% ■ Electro-Optical Characteristics Ta = 25°C Parameter Radiant power Symbol PO Conditions IF = 50 mA min typ 9 max Unit 19 mW Peak emission wavelength λP IF = 50 mA 940 nm Spectral half band width ∆λ IF = 50 mA 50 nm Forward voltage (DC) VF IF = 50 mA 1.3 Reverse current (DC) IR VR = 3 V Capacitance between pins Ct VR = 0 V, f = 1 MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 20 ° 1.6 V 10 µA 1