Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Not soldered 2.0 max. Unit : mm ø5.0±0.2 1.0 7.65±0.2 For optical control systems Features High-power output, high-efficiency : PO = 18 mW (typ.) 25.6±1.0 5.05±0.3 1.5 (2.0) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 2-0.8 max. 2-0.6±0.15 Parameter Symbol Ratings Unit PD 190 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 1 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) 0.6±0.15 2.54 1 2 1: Anode 2: Cathode tw = 10 µs, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min max Unit Radiant power PO IF = 50mA Peak emission wavelength λP IF = 50mA Spectral half band width ∆λ IF = 50mA 40 Forward voltage (DC) VF IF = 100mA 1.6 Reverse current (DC) IR VR = 3V Half-power angle θ The angle in which radiant intencity is 50% 20 deg. Cutoff frequency fC* IFP = 50mA + 10mAp-p 20 MHz Frequency when modulation optical power decreases by 3dB from 1MHz 10 typ 18 mW 860 nm nm 1.9 10 PO(fCMHz) 10 log =–3 P O (1MHz) ( V µA ) 1 LN77L Infrared Light Emitting Diodes IFP — Duty cycle 10 2 60 40 IFP (mA) tw = 10µs Ta = 25˚C 10 Pulse forward current IFP (A) 80 Pulse forward current 1 10 –1 20 0 – 25 0 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) VF (V) (2) Forward voltage Relative radiant power ∆PO (1) 1 10 –1 10 2 10 0 1 50mA 1.4 1.0 λP — Ta 920 3 0 40 80 120 IF = 50mA 1 10 –1 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant Intensity (%) 840 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 860 80 Ambient temperature Ta (˚C ) IF = 50mA 880 5 Ambient temperature Ta (˚C ) 100 900 4 ∆PO — Ta IF = 100mA 0.6 – 40 10 3 2 10 1.8 Pulse forward current IFP (mA) Peak emission wavelength λP (nm) 1 Forward voltage VF (V) 2.2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 10 VF — Ta 10 10 –2 10 2 Duty cycle (%) ∆PO — IFP 10 2 tw = 10µs f = 100Hz Ta = 25˚C 10 3 10 –1 10 2 10 Relative radiant power ∆PO IF (mA) Allowable forward current 100 IFP — VF 10 4 Relative radiant intensity (%) IF — Ta 120 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 820 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 750 800 850 900 950 1000 1050 Wavelength λ (nm)