DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D302 PMEG6010AED Low VF (MEGA) Schottky barrier diode Product data sheet 2003 Jun 27 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode FEATURES PMEG6010AED PINNING • Low switching losses PIN DESCRIPTION • Very high surge current absorption capability 1 cathode • Fast recovery time 2 cathode • Guard ring protected 3 anode • Plastic SMD package. 4 anode 5 cathode 6 cathode APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. handbook, halfpage 6 4 5 GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package. 1, 2 5, 6 1 2 3, 4 3 MHC634 Marking code: M4. Fig.1 Simplified outline SOT457 (SC-74) and symbol. LIMITING VALUES In accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 60 V − 1 A non-repetitive peak forward current t = 8 ms; square wave − 17.5 A IRSM non-repetitive peak reverse current tp = 100 μs − 0.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − +150 °C VR continuous reverse voltage IF continuous forward current IFSM Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for cathode 6 cm2. 2003 Jun 27 2 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG6010AED ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF IR Cd PARAMETER continuous forward voltage continuous reverse current diode capacitance CONDITIONS MAX. UNIT IF = 0.1 A 400 mV IF = 1 A 650 mV VR = 60 V; see Fig.3 350 μA VR = 60 V; Tj = 100 °C; notes 1 and 2 8 mA VR = 4 V; f = 1 MHz; see Fig.4 60 pF Notes 1. Pulse test: tp = 300 μs; δ = 0.02. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 230 K/W in free air; note 2 180 K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2. 2. Device mounted on a printed-circuit board, single-sided copper; tinplated, mounting pad for cathode 6 cm2. 2003 Jun 27 3 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG6010AED GRAPHICAL DATA MHC635 103 handbook, halfpage MHC636 10−2 handbook, halfpage IR (A) IF (mA) (1) 10−3 (2) 102 (3) 10−4 (1) (2) (3) (4) 10 10−5 (4) 1 0 0.2 (1) Tamb = 125 °C. (2) Tamb = 100 °C. Fig.2 0.4 VF (V) 10−6 0.6 (3) Tamb = 75 °C. (4) Tamb = 25 °C. Fig.3 MHC637 handbook, halfpage Cd (pF) 160 120 80 40 0 0 20 40 VR (V) 60 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Jun 27 20 (1) Tamb = 125 °C. (2) Tamb = 100 °C. Forward current as a function of forward voltage; typical values. 200 0 4 40 VR (V) 60 (3) Tamb = 75 °C. (4) Tamb = 25 °C. Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG6010AED PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Jun 27 REFERENCES IEC JEDEC EIAJ SC-74 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG6010AED DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2003 Jun 27 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp7 Date of release: 2003 Jun 27 Document order number: 9397 750 11455