PHILIPS PMEG6010AED

DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D302
PMEG6010AED
Low VF (MEGA) Schottky barrier
diode
Product data sheet
2003 Jun 27
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
FEATURES
PMEG6010AED
PINNING
• Low switching losses
PIN
DESCRIPTION
• Very high surge current absorption capability
1
cathode
• Fast recovery time
2
cathode
• Guard ring protected
3
anode
• Plastic SMD package.
4
anode
5
cathode
6
cathode
APPLICATIONS
• Low power switched-mode power supplies
• Rectification
• Polarity protection.
handbook, halfpage 6
4
5
GENERAL DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOT457
(SC-74) small plastic package.
1, 2
5, 6
1
2
3, 4
3
MHC634
Marking code: M4.
Fig.1
Simplified outline SOT457 (SC-74) and
symbol.
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
60
V
−
1
A
non-repetitive peak forward current t = 8 ms; square wave
−
17.5
A
IRSM
non-repetitive peak reverse current tp = 100 μs
−
0.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
+150
°C
VR
continuous reverse voltage
IF
continuous forward current
IFSM
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for cathode 6 cm2.
2003 Jun 27
2
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
VF
IR
Cd
PARAMETER
continuous forward voltage
continuous reverse current
diode capacitance
CONDITIONS
MAX.
UNIT
IF = 0.1 A
400
mV
IF = 1 A
650
mV
VR = 60 V; see Fig.3
350
μA
VR = 60 V; Tj = 100 °C;
notes 1 and 2
8
mA
VR = 4 V; f = 1 MHz; see Fig.4
60
pF
Notes
1. Pulse test: tp = 300 μs; δ = 0.02.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
PR are a significant part of the total power losses.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
in free air; note 1
230
K/W
in free air; note 2
180
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper; tinplated, mounting pad for cathode 6 cm2.
2003 Jun 27
3
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
GRAPHICAL DATA
MHC635
103
handbook, halfpage
MHC636
10−2
handbook, halfpage
IR
(A)
IF
(mA)
(1)
10−3
(2)
102
(3)
10−4
(1) (2) (3)
(4)
10
10−5
(4)
1
0
0.2
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Fig.2
0.4
VF (V)
10−6
0.6
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.3
MHC637
handbook, halfpage
Cd
(pF)
160
120
80
40
0
0
20
40
VR (V)
60
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Jun 27
20
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Forward current as a function of forward
voltage; typical values.
200
0
4
40
VR (V)
60
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
5
X
v M A
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2003 Jun 27
REFERENCES
IEC
JEDEC
EIAJ
SC-74
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG6010AED
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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specifications and product descriptions, at any time and
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Jun 27
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2003 Jun 27
Document order number: 9397 750 11455