NCP340 Soft-Start Controlled Load Switch The NCP340 is a low Ron N−channel MOSFET controlled by a soft−start sequence of 2 ms for mobile applications. The very low RDS(on) allows system supplying or battery charging up to DC 3A.The device is enable automatically if a Power Supply is connected on Vin pin (active High) and maintained off if no Vin (internal pull down). Due to a current consumption optimization, leakage current is drastically decreased from the battery connected to the device, allowing long battery life. Features • • • • • • • • • • 1.8 V − 5.5 V Operating Range 30 mW N−MOSFET DC Current Up to 3 A Built−in Soft−Start 2 ms Reverse Voltage Protection Active High with Integrated Bridge Compliance to IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) ESD Ratings: Machine Model = B Human Body Model = 3 mDFN4 1.2 x 1.6 mm This is a Pb−Free Device TVS ESD9x 1 34 M UDFN4 CASE 517CE = Specific Device Code = Date Code PINOUT IN OUT PAD1 GND EN (Top View) Mobile Phones Tablets Digital Cameras GPS Computers Vbat MARKING DIAGRAM 34 M Typical Applications • • • • • http://onsemi.com ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. OUT IN NCP340 EN 1 mF GND EN USB Port VBUS D+ D− GND 4 IN CMIC OUT SBC Charger SYSTEM Supply HS Monitoring USB Signal Routing Accessory Detection and ID I@C Figure 1. Typical Application Circuit © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 0 1 Publication Order Number: NCP340/D NCP340 PIN FUNCTION DESCRIPTION Pin Name Pin Number Type Description IN 1 POWER Power−switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as close as possible to the IC. GND 2 POWER Ground connection; EN 3 INPUT OUT 4 OUTPUT Power−switch output; connect a 1 mF ceramic capacitor from OUT to GND as close as possible to the IC is recommended. POWER Exposed pad can be connected to GND plane for dissipation purpose or any other thermal plane. PAD1 Enable input, logic high turns on power switch. BLOCK DIAGRAM IN: Pin1 OUT: Pin 4 1 mF Gate driver and soft start control Battery VREF Charge Pump EN: 3 EN block 2 Figure 2. Block Diagram http://onsemi.com 2 NCP340 MAXIMUM RATINGS Rating Symbol Value Unit VEN , VIN , VOUT −0.3 to + 7.0 V From IN to OUT Pins: Input/Output VIN , VOUT −7.0 to + 7.0 V ESD Withstand Voltage (IEC 61000−4−2) (Note 1) (IN and OUT when bypassed with 1.0 mF capacitor minimum) ESD IEC 15 Air, 8 contact kV Human Body Model (HBM) ESD Rating are (Notes 2 and 3) ESD HBM 8000 V Machine Model (MM) ESD Rating are (Notes 2 and 3) ESD MM 250 V LU 100 TJ −40 to + 125 °C Storage Temperature Range TSTG −40 to + 150 °C Moisture Sensitivity (Note 5) MSL Level 1 IN, OUT, EN, Pins: Latch−up protection (Note 4) − Pins IN, OUT, EN Maximum Junction Temperature Range mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Guaranteed by design. 2. According to JEDEC standard JESD22−A108. 3. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115 for all pins. 4. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78 class II. 5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020. OPERATING CONDITIONS Symbol Parameter VIN Operational Power Supply VEN Enable Voltage Conditions Min Typ 1.8 0 Max Unit 5.5 V 5.5 TA Ambient Temperature Range − 40 25 + 85 °C TJ Junction Temperature Range − 40 25 + 125 °C CIN Decoupling input capacitor COUT Decoupling output capacitor RqJA Thermal Resistance Junction to Air IOUT Maximum DC current I peak PD USB port per Hub UDFN4 package (Note 6) mF 1 mF 170 °C/W UDFN4 package 3 A 100 ms pulse 15 A Maximum Peak current Power Dissipation Rating (Note 7) 1 TA ≤ 25°C UDFN4 package 0.58 TA = 85°C UDFN4 package 0.225 6. The RqJA is dependent of the PCB heat dissipation. 7. The maximum power dissipation (PD) is given by the following formula: PD + http://onsemi.com 3 TJMAX * TA R qJA W NCP340 ELECTRICAL CHARACTERISTICS Min & Max Limits apply for TA between −40°C to +85°C and TJ up to + 125 °C for VIN between 1.8 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = + 25 °C and VIN = 5 V. Symbol Parameter Conditions Min Typ Max Unit POWER SWITCH Static drain−source on−state resistance VIN = 3 V, VIN = 5 V TR Output rise time VIN = 5 V CLOAD = 1 mF, RLOAD = 125 W (Note 8) TF Output fall time VIN = 5 V CLOAD = 100 mF, RLOAD = 40 W (Note 8) Ton Gate turn on VIN = 5 V From Vin applied to VOUT = 10% of fully on VIN = 3 V From Vin applied to VOUT = 10% of fully on (Note 9) RDS(on) TJ = 25°C 26 −40°C < TJ < 125°C mW 50 0.5 2 4 4 0.5 2 ms ms 4 ms 3 ENABLE INPUT EN VIH High−level input voltage VIL Low−level input voltage Rpd En pull−down resistor Rpu En pull−up resistor 1.15 V 0.85 V 1 MW 1.5 MW REVERSE−LEAKAGE PROTECTION IREV Reverse−current protection VIN = 0 V, Vout = 4.2 V (part disable), TJ = 25°C 0.15 1 mA No load 100 200 mA QUIESCENT CURRENT Iq Current consumption 8. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground. 9. Guaranteed by characterization. http://onsemi.com 4 NCP340 TYPICAL CHARACTERISTICS TA = 25°C 100 TA = −40°C 80 60 40 20 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.30 0.25 0.20 0.15 0.05 40 40 RDS(on) (mW) 45 IOUT = 3 A 35 IOUT = 2 A 30 IOUT = 1 A 3.0 3.5 4.0 4.5 5.0 5.5 IOUT = 0.5 A 3.0 4.2 IOUT = 2 A IOUT = 3 A IOUT = 0.5 A 35 IOUT = 1 A 30 25 20 5.4 1.8 3.0 4.2 5.4 VIN, INPUT VOLTAGE (V) VIN, INPUT VOLTAGE (V) Figure 5. RDS(on) vs. VIN Voltage at 255C Figure 6. RDS(on) vs. VIN Voltage at 855C 50 50 45 45 40 40 35 30 IOUT = 2 A VIN = 1.8 V 35 VIN = 3.0 V 30 VIN = 5.5 V IOUT = 3 A 25 VIN = 5.0 V 25 IOUT = 1 A 1.8 2.5 Figure 4. Reverse Current vs. Output Voltage 45 20 2.0 Figure 3. Supply Current vs. Voltage 50 1.8 TA = 25°C 1.5 VOUT, OUTPUT VOLTAGE (V) 50 20 TA = −40°C 0.10 0 5.5 TA = 85°C VIN, INPUT VOLTAGE (V) 25 RDS(on) (mW) IREV, REVERSE CURRENT (mA) 120 0 RDS(on) (mW) 0.35 TA = 85°C RDS(on) (mW) Iq, SUPPLY CURRENT (mA) 140 3.0 IOUT = 0.5 A 4.2 20 5.4 0 0.5 1.0 1.5 2.0 2.5 3.0 VIN, INPUT VOLTAGE (V) IOUT, OUTPUT CURRENT (A) Figure 7. RDS(on) vs. VIN Voltage at −405C Figure 8. RDS(on) vs. IOUT at 255C http://onsemi.com 5 3.5 NCP340 TYPICAL CHARACTERISTICS 50 TJ, JUNCTION TEMPERATURE (°C) 90 RDS(on) (mW) 45 40 35 30 25 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 80 70 60 VIN = 3.0 V 50 VIN = 5.5 V 40 VIN = 5.0 V 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 IOUT, OUTPUT CURRENT (A) IOUT, OUTPUT CURRENT (A) Figure 9. RDS(on) vs. IOUT at 855C Figure 10. Junction Temperature vs. IOUT 1.02 EN PIN THRESHOLD (V) 1.01 VIH vs. VIN 1.00 VIL vs. VIN 0.99 0.98 0.97 0.96 0.95 0.94 0 1 2 3 4 5 6 VIN, INPUT VOLTAGE (V) Figure 11. Logic Threshold vs. VIN Figure 12. TON Time on 75 mA Load Figure 13. TOFF Time on 75 mA Load Figure 14. TON Time on 800 mA Load http://onsemi.com 6 3.0 NCP340 TYPICAL CHARACTERISTICS Figure 15. TOFF Time on 800 mA Load Figure 16. TON Time on 2 A Load Figure 17. TOFF Time on 2.3 A Load http://onsemi.com 7 NCP340 FUNCTIONAL DESCRIPTION Overview Blocking Control The NCP340 is a high side N−channel MOSFET power distribution switch designed to connect external voltage directly to the system. The high side MOSFET is automatically turned on if the Vin voltage is applied thanks to internal pull up connected between Vin and EN pin. The turned off is obtained by Vin removal. Due to the soft start circuitry, NCP340 is able to limit large voltage surges. The blocking control circuitry switches the bulk of the power NMOS. When the part is off (No VIN or EN tied to GND externally) , the body diode limits the leakage current IREV from OUT to IN. In this mode, anode of the body diode is connected to IN pin and cathode is connected to OUT pin. In operating condition, anode of the body diode is connected to OUT pin and cathode is connected to IN pin preventing the discharge of the power supply. Enable input Enable pin is an active high. The part is off when Vin is not present, limiting current consumption from battery to OUT pin. In the other side, the part is automatically turned on when VIN is applied. Cin Capacitor A IN capacitor, 1 mF, at least, capacitor must be placed as close as possible the part to be Compliant with IEC61000−4−2 (Level 4). Cout Capacitor Depending on the sinking current during system start up and system turn off, a capacitor must be placed on the output. A 1 mF is strongly recommended but can be decreased down to 100 nF if the above two sequences are well controlled and parasitic inductance connected on the Vout line is negligible. APPLICATION INFORMATION Power Dissipation PCB Recommendations The device’s junction temperature depends on different contributor factor such as board layout, ambient temperature, device environment, etc... Yet, the main contributor in term of junction temperature is the power dissipation of the power MOSFET. Assuming this, the power dissipation and the junction temperature in normal mode can be calculated with the following equations: The NCP340 integrates an up to 3 A rated NMOS FET, and the PCB design rules must be respected to properly evacuate the heat out of the silicon. The mDFN4 PAD1 must be connected to ground plane to increase the heat transfer if necessary. By increasing PCB area, the RqJA of the package can be decreased, allowing higher power dissipation. P D + R DS(on) ǒI OUTǓ 2 PD = Power dissipation (W) RDS(on) IOUT = Power MOSFET on resistance (W) = Output current (A) TJ + PD R qJA ) T A TJ = Junction temperature (°C RqJA TA = Package thermal resistance (°C/W) = Ambient temperature (°C) ORDERING INFORMATION Device NCP340MUTBG Marking Package Shipping† 34 mDFN4, 1.2x1.6 mm (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 8 NCP340 PACKAGE DIMENSIONS UDFN4 1.2x1.6, 0.5P CASE 517CE ISSUE B L A B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. L L1 PIN ONE REFERENCE 2X DETAIL A ÉÉ ÉÉ ALTERNATE TERMINAL CONSTRUCTIONS E 0.05 C 2X ÉÉ ÉÉ 0.05 C TOP VIEW EXPOSED Cu (A3) DETAIL B A 0.05 C DIM A A1 A3 b D D2 E E2 e L L1 MOLD CMPD DETAIL B ALTERNATE CONSTRUCTION 0.05 C SIDE VIEW A1 C SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT* D2 DETAIL A 1 4X 2 b 0.05 M NOTE 3 4 3 4X e/2 0.86 C A B E2 e MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.00 −−− 0.05 0.13 REF 0.25 0.30 0.35 1.20 BSC 0.76 0.86 0.96 1.60 BSC 0.40 0.50 0.60 0.50 BSC 0.20 0.30 0.40 −−− −−− 0.15 1.90 L BOTTOM VIEW 4X 0.25 PACKAGE OUTLINE 0.50 1 0.50 PITCH 4X 0.45 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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