ESD9X3.3ST5G SERIES ESD Protection Diodes In Ultra Small SOD−923 Package The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. http://onsemi.com 1 Specification Features: • Small Body Outline Dimensions: • • • • • • • PIN 1. CATHODE 2. ANODE 0.039″ x 0.024″ (1.0 mm x 0.60 mm) Low Body Height: 0.017″ (0.43 mm) Max Stand−off Voltage: 3.3 V − 12 V Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000−4−2 Level 4 ESD Protection These are Pb−Free Devices MARKING DIAGRAM X M Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any Device Meets MSL 1 Requirements MAXIMUM RATINGS ESD Voltage Value Unit Contact Symbol ±30 kV Per Human Body Model Per Machine Model 16 400 kV V Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) = Specific Device Code = Date Code ORDERING INFORMATION QUALIFIED MAX REFLOW TEMPERATURE: 260°C Rating XM SOD−923 CASE 514AA Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic IEC 61000−4−2 (ESD) 2 ⎪ PD 150 mW TJ, Tstg −55 to +150 °C TL 260 °C Device Package Shipping † ESD9XxxST5G SOD−923 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 1 1 Publication Order Number: ESD9X3.3ST5G/D ESD9X3.3ST5G SERIES ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IF Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Working Peak Reverse Voltage VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM V IR VF IT IPP Max. Capacitance @VR = 0 and f = 1 MHz Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Device* Device Marking VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT Max Max Min mA Max IPP (A) (Note 3) VC (V) @ Max IPP (Note 3) Ppk (W) (8 x 20 ms) C (pF) Max Typ Typ ESD9X3.3ST5G A 3.3 2.5 5.0 1.0 9.8 10.4 102 80 ESD9X5.0ST5G B 5.0 1.0 6.2 1.0 8.7 12.3 107 65 ESD9X12ST5G C 12 1.0 13.5 1.0 5.9 23.7 140 30 *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 3. http://onsemi.com 2 ESD9X3.3ST5G SERIES 7.4 20 7.3 18 7.2 16 7.1 14 IR (nA) 7.0 6.9 6.8 6.7 12 10 8 6.6 6 6.5 4 6.4 2 6.3 −55 + 25 TEMPERATURE (°C) 0 −55 + 150 Figure 1. Typical Breakdown Voltage versus Temperature 100 % OF PEAK PULSE CURRENT BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) TYPICAL CHARACTERISTICS tr 90 + 25 TEMPERATURE (°C) + 150 Figure 2. Typical Leakage Current versus Temperature PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 60 80 t, TIME (ms) Figure 3. 8 X 20 ms Pulse Waveform Figure 5. Negative 8 kV contact per IEC 61000−4−2 − ESD9X5.0ST5G Figure 4. Positive 8 kV contact per IEC 6100−4−2 − ESD9X5.0ST5G http://onsemi.com 3 ESD9X3.3ST5G SERIES PACKAGE DIMENSIONS SOD−923 CASE 514AA−01 ISSUE B D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS MIN NOM MAX 0.36 0.40 0.43 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.014 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.016 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.017 0.010 0.007 0.033 0.026 0.041 0.006 SOLDERING FOOTPRINT* 0.90 0.40 0.30 DIMENSIONS: MILLIMETERS SOD−923 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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