NOA1213 D

NOA1213
Product Preview
Ambient Light Sensor with
Dark Current Compensation
Description
The NOA1213 is a very low power ambient light sensor (ALS) with
an analog current output and a power down mode to conserve power.
Designed primarily for handheld device applications, the active power
dissipation of this chip is less than 8 mA at dark and its quiescent
current consumption is less than 200 pA in power down mode. The
device can operate over a very wide range of voltages from 2 V to
5.5 V. The NOA1213 employs proprietary CMOS image sensing
technology from ON Semiconductor, including built−in dynamic dark
current compensation to provide large signal to noise ratio (SNR) and
wide dynamic range (DR) over the entire operating temperature range.
The photopic optical filter provides a light response similar to that of
the human eye. Together the photopic light response and dark current
compensation insures accurate light level detection.
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1
CUDFN6
CU SUFFIX
CASE 505AL
PIN ASSIGNMENT
VDD
Features
1
6 IOUT
• Senses Ambient Light and Provides an Output Current Proportional
to the Ambient Light Intensity
• Photopic Spectral Response
• Dynamic Dark Current Compensation
• Three Selectable Output Current Gain Modes in Approximately 10x
VSS 2
5 NC
GB1 3
4 GB2
Steps
(Top View)
• Power Down Mode
• Less than 14 mA at 100 lux Active Power Consumption in Medium
•
•
•
•
•
•
•
Gain Mode (Less than 8 mA at Dark)
Less than 200 pA Quiescent Power Dissipation in Power Down
Mode at All Light Levels
Linear Response Over the Full Operating Range
Senses Intensity of Ambient Light from ~0 lux to Over 100,000 lux
Wide Operating Voltage Range (2 V to 5.5 V)
Wide Operating Temperature Range (−40°C to 85°C)
Drop−in Replacement Device in 1.6 x 1.6 mm Package
These Devices are Pb−Free, Halogen Free/BFR Free
and are RoHS Compliant
Applications
hn
• Saves display power in applications such as:
♦
♦
♦
♦
♦
♦
♦
ORDERING INFORMATION
Device
Package
Shipping†
NOA1213CUTAG*
CUDFN6
(Pb−Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Temperature Range: −40°C to 85°C.
Vin = 2 to 5.5V
GS2 GS1
VDD
Photo
Diode
Cell Phones, PDAs, MP3 players, GPS
Cameras, Video Recorders
Mobile Devices with Displays or Backlit Keypads
Laptops, Notebooks, Digital Signage
LCD TVs and Monitors, Digital Picture Frames
Automobile Dashboard Displays and Infotainment
LED Indoor/Outdoor Residential and Street Lights
GB2
Amp
C1
1μ
GB1
ADC
IOUT
RL
VSS
CL
IC2
NOA1212
IC1
Figure 1. Typical Application Circuit
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. P1
1
Publication Order Number:
NOA1213/D
NOA1213
GS2 GS1
GB2
GB1
VOUT
Amp
IOUT
hn
RL
Photo
Diode
Reference
Diode
Figure 2. Simplified Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin
Pin Name
Description
1
VDD
Power pin.
2
VSS
Ground pin.
3
GB1
In conjunction with GB2, selects between three gain modes and power down.
4
GB2
In conjunction with GB1, selects between three gain modes and power down.
5
NC
Not connected. This may be connected to ground or left floating.
6
IOUT
Analog current output.
EP
VSS
Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input power supply
VDD
6
V
Input voltage range
VIN
−0.3 to VDD + 0.3
V
Output voltage range
VOUT
−0.3 to VDD + 0.2
V
Output current range
Io
0 to 15
mA
TJ(max)
−40 to 85
°C
TSTG
−40 to 85
°C
ESD Capability, Human Body Model (Note 1)
ESDHBM
2
kV
ESD Capability, Charged Device Model (Note 1)
ESDCDM
750
V
ESD Capability, Machine Model (Note 1)
Maximum Junction Temperature
Storage Temperature
ESDMM
150
V
Moisture Sensitivity Level
MSL
3
−
Lead Temperature Soldering (Note 2)
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Charged Device Model tested per ESD−STM5.3.1−1999
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
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2
NOA1213
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < TA < 85°C)
Rating
Test Conditions
Power supply voltage
Symbol
Min
Typ
Max
Unit
VDD
2
3.0
5.5
V
IDD_0
6
8
12
mA
35
Power supply current
VDD = 3.0 V, Ev = 0 lux, H−Gain
Power supply current
VDD = 3.0 V, Ev = 100 lux, H−Gain
IDD_100
Power down current
All light levels
IDD_PD
Output current, high−gain
Ev = 100 lux, White LED
Io_high
Dark output current, high−gain
VDD = 3.0 V, Ev = 0 lux
Io_dark
10
nA
lm
590
nm
Wavelength of maximum
response
23.8
45
55
mA
0.2
5
nA
34
44.3
mA
White LED/fluorescent current
ratio
Ev = 100 lux
rLE
1.0
Incandescent/fluorescent
current ratio
Ev = 100 lux
rIF
0.83
Maximum output voltage
Ev = 100 lux, RL = 220 kW, H−Gain
Power down time
Wake up time
VOMAX
VDD–0.4
Ev = 100 lux, H−Gain to PD
tPD
1.5
Ev = 100 lux, PD to H−Gain
twu
VDD–0.1
VDD
V
ms
300
ms
Low level input voltage
VIL
−0.2
0.25 VDD
V
High level input voltage
VIH
0.75 VDD
VDD+0.2
V
Operating free−air temperature
range
TA
−40
85
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NOA1213
TYPICAL CHARACTERISTICS
OUTPUT CURRENT (Normalized)
1.0
ALS
Human Eye
0.9
Fluorescent
(5000K)
0.8
0.7
White LED
(5600K)
0.6
0.5
Fluorescent
(2700K)
0.4
0.3
0.2
Incandescent
(2850K)
0.1
0
200
300
400
500
600
700
800
WAVELENGTH (nm)
900
1000
0
Figure 3. Spectral Response (Normalized)
100
10
1
0.1
0.01
0.001
High Gain
Medium Gain
Low Gain
0.00001
0.01
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
1.5
2
10000
VDD = 3.3 V
0.0001
No Load
1 kW Load
10 kW Load
100 kW Load
1000
100
10
VDD = 3.3 V
1
0.1
1
10
1
100 1000 10000 100000 1000000
Ev (lux)
Figure 5. Output Current vs. Ev
10
100
Ev (lux)
1000
10000
Figure 6. Output Current vs. Ev
(High Gain Mode)
400
40
White LED (5600K)
White LED (5600K)
350
35
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
1
Ratio
Figure 4. Light Source Dependency
(Normalized to Fluorescent Light)
10000
1000
0.5
300
250
200
150
100
50
30
25
20
15
10
5
0
0
0
200
400
600
Ev (lux)
800
1000
0
20
40
60
80
Ev (lux)
Figure 7. Output Current vs. Ev, 0−1000 lux
(High Gain Mode)
Figure 8. Output Current vs. Ev, 0−100 lux
(High Gain Mode)
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4
100
NOA1213
TYPICAL CHARACTERISTICS
−40
−50
−60
−70
−80
−90
−30
30
−40
40
−50
50
−60
60
−70
70
−80
80
−90
90
−101.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
10
20
30
40
50
60
70
80
90
−100
100
−110
Q
−110
110
−120
−120
END VIEW
120
−130
130
−140
−150
−160
−90o
140
−170
180
170
160
150
1
6
2
5
3
4
OUTPUT CURRENT (Normalized to 20C)
OUTPUT CURRENT (nA)
VDD = 3.3 V
2.5
2.0
1.5
1.0
0.5
−20
0
20
40
TEMPERATURE (°C)
160
−90
90o
TOP VIEW
60
80
100
1.6
1.4
VDD = 3.3 V
1.2
1.0
0.8
0.6
0.4
High Gain Mode
Medium Gain Mode
Low Gain Mode
0.2
0.0
−60
Figure 11. Output Current at 0 lux vs.
Temperature (High Gain Mode)
−40
−20
0
20
40
TEMPERATURE (°C)
60
80
100
Figure 12. Output Current at 100 lux vs.
Temperature
10
9
170
SIDE VIEW
o
Figure 10. Output Current vs. Angle
(Side View, Normalized)
3.0
−40
180
130
140
150
TOP VIEW
Figure 9. Output Current vs. Angle
(End View, Normalized)
0.0
−60
120
−130
−140
−150
−160
−170
90o
Q
110
1
−100
100
4
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
−20
5
20
3
10
6
0
2
−30
−101.0
−20
40
VDD = 3.3 V
35
8
30
6
IDD (mA)
IDD (mA)
7
5
4
25
20
15
3
10
2
0
−60
VDD = 3.3 V
5
1
−40
−20
0
20
40
TEMPERATURE (°C)
60
80
0
−60
100
Figure 13. Supply Current at 0 lux vs.
Temperature (High Gain Mode)
−40
−20
0
20
40
TEMPERATURE (°C)
60
80
Figure 14. Supply Current at 100 lux vs.
Temperature (High Gain Mode)
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5
100
NOA1213
500
1.4
450
SUPPLY CURRENT (mA)
1.6
1.2
1.0
0.8
0.6
0.4
0.2
White LED (5600K)
400
350
300
250
200
150
100
50
0.0
0
0
1
2
3
4
5
6
0
200
VDD (V)
Figure 15. Output Current at 100 lux vs. Supply
Voltage (High Gain Mode)
400
600
Ev (Lux)
50
40
30
20
10
0
0
1
2
800
Figure 16. Supply Current vs. Ev
(High Gain Mode)
60
SUPPLY CURRENT (mA)
OUTPUT CURRENT (Normalized)
TYPICAL CHARACTERISTICS
3
VDD (V)
4
5
Figure 17. Supply Current vs. Supply Voltage
(High Gain Mode)
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6
6
1000
NOA1213
DESCRIPTION OF OPERATION
Ambient Light Sensor Architecture
transmits photons in the visible spectrum which are
primarily detected by the human eye and exhibits excellent
IR rejection. The photo response of this sensor is as shown
in Figure 3.
The ambient light signal detected by the photo diode is
converted to an analog output current by an amplifier with
programmable gain. Table 4 shows the gain setting and the
corresponding light sensitivity.
The NOA1213 employs a sensitive photo diode fabricated
in ON Semiconductor’s standard CMOS process
technology. The major components of this sensor are as
shown in Figure 2 . The photons which are to be detected
pass through an ON Semiconductor proprietary color filter
limiting extraneous photons and thus performing as a band
pass filter on the incident wave front. The filter only
Table 4. PROGRAMMABLE GAIN SETTINGS
GB2
GB1
Mode
Approximate Output
Current @ 100 lux
Approximate Output
Current @ 1000 lux
Saturation
0
0
Power Down
−
−
−
0
1
High Gain
34.1 mA
365 mA
~10,000 lux
1
0
Medium Gain
3.56 mA
37.3 mA
~100,000 lux
1
1
Low Gain
0.387 mA
4.19 mA
> 100,000 lux
Power Down Mode
maximum desired EV as shown in Equation 3. Equation 4
computes the value for RL (High−Gain mode).
This device can be placed in a power down mode by
setting GB1 and GB2 to logic low level.
In order for proper operation of this mode GB1 and GB2
should stay low 1.5 ms.
(eq. 3)
R L + ǒV DD * 0.4 VǓńE VMAX * ǒ100 luxń34.5 mAǓ
(eq. 4)
For example, consider a 5 V supply with a desired EVMAX
= 1000 lux, the value of RL would be 13.3 kW. The value for
RL can easily be computed for different NOA1213 gain
ranges by substituting the appropriate output current at
100 lux from Table 4.
The optional capacitor CL can be used to form a low−pass
filter to remove 50/60 Hz filter or other unwanted noise
sources as computed with Equation 5.
External Component Selection
The NOA1213 outputs a current in direct response to the
incident illumination. In many applications it is desirable to
convert the output current into voltage. It may also be
desirable to filter the effects of 50/60 Hz flicker or other light
source transients.
Conversion from current to voltage may be accomplished
by adding load resistor RL to the output. The value of RL is
bounded on the high side by the potential output saturation
of the amplifier at high ambient light levels. RL is bounded
on the low side by the output current limiting of the internal
amplifier and to minimize power consumption.
Equation 1 describes the relationship of light input to
current output for the High−Gain mode.
I OUT + ǒ34.5 mAń100 luxǓ * E V
V OMAX + ǒ34.5 mAń100 luxǓ * E VMAX * R L
C L + 1ń2p f c R L
(eq. 5)
For our example, to filter out 60Hz flicker the value of CL
would be 200 nF.
Power Supply Bypassing and Printed Circuit Board
Design
Power supply bypass and decoupling can typically be
handled with a low cost 0.1 mF to 1.0 mF capacitor.
The exposed pad on the bottom of the package is internally
connected to VSS pin 2 and should be soldered to the printed
circuit board.
(eq. 1)
By adding RL to the output, IOUT is converted into a
voltage according to Equation 2.
V OUT + I OUT * R L + ǒ34.5 mAń100 luxǓ * E V * R L (eq. 2)
The range of the output voltage is limited by the output
stage to the VOMAX parameter value of VDD – 0.4 V at the
NOTE: Oblique illumination with IR light can disrupt normal operation. Please request App Note “Known
NOA1213CUTAG Performance Aberrations” for more details.
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NOA1213
PACKAGE DIMENSIONS
CUDFN6, 1.6x1.6, 0.5P
CASE 505AL
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.10 AND 0.20MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A B
D
PIN 1
E
0.10 C
2X
DIM
A
A1
A3
b
b2
D
D2
E
E2
e
L
L2
0.10 C
2X
TOP VIEW
A
0.10 C
A3
0.08 C
A1
SIDE VIEW
NOTE 4
L2
C
0.10
M
6X
L
D2
PIN ONE
REFERENCE
1
SEATING
PLANE
MILLIMETERS
MIN
MAX
0.55
0.65
0.00
0.05
0.20 REF
0.15
0.25
0.15 REF
1.60 BSC
1.05
1.15
1.60 BSC
0.45
0.55
0.50 BSC
0.25
0.35
0.17 REF
RECOMMENDED
MOUNTING FOOTPRINT*
C A B
1.70
3
0.10
M
C A B
6X
0.48
E2
b2
6
4
6X
e
b
0.10 C A B
0.05 C
0.75
NOTE 3
1.90
1
BOTTOM VIEW
6X
0.50
PITCH
0.28
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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NOA1213/D