MC14008B D

MC14008B
4-Bit Full Adder
The MC14008B 4−bit full adder is constructed with MOS
P−Channel and N−Channel enhancement mode devices in a single
monolithic structure. This device consists of four full adders with fast
internal look−ahead carry output. It is useful in binary addition and
other arithmetic applications. The fast parallel carry output bit allows
high−speed operation when used with other adders in a system.
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Features
•
•
•
•
•
•
•
Look−Ahead Carry Output
Diode Protection on All Inputs
All Outputs Buffered
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low−Power TTL Loads or One
Low−Power Schottky TTL Load Over the Rated Temperature Range
Pin−for−Pin Replacement for CD4008B
This Device is Pb−Free and is RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to VSS)
Parameter
Value
Unit
−0.5 to +18.0
V
−0.5 to VDD + 0.5
V
Input or Output Current
(DC or Transient) per Pin
±10
mA
PD
Power Dissipation, per Package
(Note 1)
500
mW
TA
Ambient Temperature Range
−55 to +125
°C
Tstg
Storage Temperature Range
−65 to +150
°C
TL
Lead Temperature
(8−Second Soldering)
260
°C
Symbol
VDD
Vin, Vout
Iin, Iout
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS ≤ (Vin or Vout) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either VSS or VDD). Unused outputs must be left open.
July, 2014 − Rev. 8
PIN ASSIGNMENT
A4
1
16
VDD
B3
2
15
B4
A3
3
14
Cout
B2
4
13
S4
A2
5
12
S3
B1
6
11
S2
A1
7
10
S1
VSS
8
9
Cin
MARKING DIAGRAM
16
14008BG
AWLYWW
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating: “D/DW” Package: –7.0 mW/_C From 65_C To 125_C
© Semiconductor Components Industries, LLC, 2014
SOIC−16
D SUFFIX
CASE 751B
1
A
WL, L
YY, Y
WW, W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Indicator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MC14008B/D
MC14008B
TRUTH TABLE
(One Stage)
Cin
B
A
Cout
S
0
0
0
0
0
0
1
1
0
1
0
1
0
0
0
1
0
1
1
0
1
1
1
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
BLOCK DIAGRAM
HIGH-SPEED
PARALLEL CARRY
B4 15
A4
1
B3
2
A3
3
B2
4
A2
5
B1
6
A1
7
Cin
9
14Cout
ADDER
4
13S4
C4
ADDER
3
12S3
C3
ADDER
2
11S2
C2
ADDER
1
10S1
VDD = PIN 16
VSS = PIN 8
ORDERING INFORMATION
Device
MC14008BDR2G
Package
Shipping†
SOIC−16
(Pb−Free)
2500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MC14008B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
−55_C
Characteristic
Symbol
25_C
VDD
Vdc
Min
Max
Min
Typ
(Note 2)
125_C
Max
Min
Max
Unit
Output Voltage
Vin = VDD or 0
“0” Level
VOL
5.0
10
15
−
−
−
0.05
0.05
0.05
−
−
−
0
0
0
0.05
0.05
0.05
−
−
−
0.05
0.05
0.05
Vdc
Vin = 0 or VDD
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
−
−
−
4.95
9.95
14.95
5.0
10
15
−
−
−
4.95
9.95
14.95
−
−
−
Vdc
Input Voltage
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
“0” Level
VIL
5.0
10
15
−
−
−
1.5
3.0
4.0
−
−
−
2.25
4.50
6.75
1.5
3.0
4.0
−
−
−
1.5
3.0
4.0
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
“1” Level
5.0
10
15
3.5
7.0
11
−
−
−
3.5
7.0
11
2.75
5.50
8.25
−
−
−
3.5
7.0
11
−
−
−
5.0
5.0
10
15
–3.0
–0.64
–1.6
–4.2
−
−
−
−
–2.4
–0.51
−1.3
−3.4
–4.2
–0.88
–2.25
−8.8
−
−
−
−
–1.7
−0.36
–0.9
−2.4
−
−
−
−
IOL
5.0
10
15
0.64
1.6
4.2
−
−
−
0.51
1.3
3.4
0.88
2.25
8.8
−
−
−
0.36
0.9
2.4
−
−
−
mAdc
Input Current
Iin
15
−
±0.1
−
±0.00001
±0.1
−
±1.0
mAdc
Input Capacitance
(Vin = 0)
Cin
−
−
−
−
5.0
7.5
−
−
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
−
−
−
5.0
10
20
−
−
−
0.005
0.010
0.015
5.0
10
20
−
−
−
150
300
600
mAdc
IT
5.0
10
15
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
VIH
Vdc
IOH
Source
Sink
Total Supply Current (Notes 3 & 4)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
Vdc
mAdc
IT = (1.7 mA/kHz) f + IDD
IT = (3.4 mA/kHz) f + IDD
IT = (5.0 mA/kHz) f + IDD
mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL − 50) Vfk
where: IT is in mA (per package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency, and k = 0.005.
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3
MC14008B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
Min
Typ
(Note 6)
Max
5.0
10
15
−
−
−
100
50
40
200
100
80
Unit
ns
tTLH,
tTHL
Propagation Delay Time
Sum in to Sum Out
tPLH, tPHL = (1.7 ns/pF) CL + 315 ns
tPLH, tPHL = (0.66 ns/pF) CL + 127 ns
tPLH, tPHL = (0.5 ns/pF) CL + 90 ns
Sum In to Carry Out
tPLH, tPHL = (1.7 ns/pF) CL + 220 ns
tPLH, tPHL = (0.66 ns/pF) CL + 112 ns
tPLH, tPHL = (0.5 ns/pF) CL + 85 ns
Carry In to Sum Out
tPLH, tPHL = (1.7 ns/pF) CL + 290 ns
tPLH, tPHL = (0.66 ns/pF) CL + 122 ns
tPLH, tPHL = (0.5 ns/pF) CL + 90 ns
Carry In to Carry Out
tPLH, tPHL = (1.7 ns/pF) CL + 85 ns
tPLH, tPHL = (0.66 ns/pF) CL + 42 ns
tPLH, tPHL = (0.5 ns/pF) CL + 30 ns
VDD
Vdc
tPLH, tPHL
ns
5.0
10
15
−
−
−
400
160
115
800
320
230
5.0
10
15
−
−
−
305
145
110
610
290
220
5.0
10
15
−
−
−
375
155
115
750
310
230
5.0
10
15
−
−
−
170
75
55
340
150
110
5. The formulas given are for the typical characteristics only at 25_C.
6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
VDD = -VGS
Vout
VDD = VGS
16
B4
A4
B3
A3
B2
A2
S4
B1
A1
Cin
S1
8
16
S3
S2
IOH
Cout
VSS
Vout
EXTERNAL
POWER
SUPPLY
B4
A4
B3
A3
B2
A2
S4
B1
A1
Cin
S1
8
Figure 1. Typical Source Current
Characteristics Test Circuit
S3
S2
IOL
Cout
VSS
EXTERNAL
POWER
SUPPLY
Figure 2. Typical Sink Current
Characteristics Test Circuit
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4
MC14008B
VDD
16
20 ns
Vin
20 ns
90%
10%
VDD
VSS
PULSE
GENERATOR
B4
A4
B3
A3
B2
A2
S4
B1
A1
Cin
S1
8
S3
S2
CL
CL
CL
Cout
CL
CL
VSS
IDD
500 mF
Figure 3. Dynamic Power Dissipation Test Circuit and Waveform
VDD
16
B4
A4
B3
A3
B2
A2
B1
A1
PULSE
GENERATOR
Cin
8
S4
S3
S2
CL
S1
CL
CL
Cout
CL
CL
VSS
IDD
20 ns
Cin
20 ns
VDD
90%
50%
10%
VSS
tPHL
tPLH
VOH
90%
50%
10%
S1 - S4
VOL
tTHL
tTLH
VOH
Cout
50%
VOL
tPLH
tPHL
Figure 4. Switching Time Test Circuit and Waveforms
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5
MC14008B
Cout
B4
S4
A4
B3
S3
A3
B2
S2
A2
B1
S1
A1
Cin
Figure 5. Logic Diagram
TYPICAL APPLICATION
WORD A + B INPUTS
A1
Cin
S1
B4
CHIP
1
Cout
S4
A1
Cin
S1
B4
CHIP
2
Cout
S4
A1
Cin
S1
B4
CHIP
3
Cout
S4
A1
Cin
B4
CHIP
4
S1
SUM OUTPUTS
Calculation of 16−bit adder speed:
tP total = tP (Sum to Carry) + tP (Carry to Sum) + 2 tP (Carry to Carry)
The guaranteed 16−bit adder speed at 10 V, 25°C, CL = 50 pF is:
tp total = 290 + 310 + 300 = 900 ns
Figure 6. Using the MC14008B in a 16−Bit Adder Configuration
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6
Cout
S4
MC14008B
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
−A−
16
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
16 PL
0.25 (0.010)
M
T B
S
A
S
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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MC14008B/D