DTC144W D

MUN2237, MMUN2237L,
MUN5237, DTC144WE,
DTC144WM3, NSBC144WF3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 22 kW
www.onsemi.com
NPN Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Collector Current − Continuous
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
SC−59
CASE 318D
STYLE 1
XXX MG
G
SOT−23
CASE 318
STYLE 6
1
1
MAXIMUM RATINGS (TA = 25°C)
Rating
PIN 3
COLLECTOR
(OUTPUT)
XX MG
G
SC−70/SOT−323
CASE 419
STYLE 3
XX M
SC−75
CASE 463
STYLE 1
XX M
SOT−723
CASE 631AA
STYLE 1
XM 1
SOT−1123
CASE 524AA
STYLE 1
1
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 4
1
Publication Order Number:
DTC144W/D
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
Table 1. ORDERING INFORMATION
Part Marking
Package
Shipping†
8P
SC−59
(Pb−Free)
3000 / Tape & Reel
AA3
SOT−23
(Pb−Free)
3000 / Tape & Reel
MUN5237T1G
8P
SC−70/SOT−323
(Pb−Free)
3000 / Tape & Reel
DTC144WET1G, NSVDTC144WET1G*
8P
SC−75
(Pb−Free)
3000 / Tape & Reel
DTC144WM3T5G
8P
SOT−723
(Pb−Free)
8000 / Tape & Reel
NSBC144WF3T5G
Q
SOT−1123
(Pb−Free)
8000 / Tape & Reel
Device
MUN2237T1G, NSVMUN2237T1G*
MMUN2237LT1G, NSVMMUN2237LT1G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
PD, POWER DISSIPATION (mW)
300
250
(1) SC−75 and SC−70/SOT323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
200
(1) (2) (3) (4) (5)
150
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
2
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
230
338
1.8
2.7
mW
THERMAL CHARACTERISTICS (SC−59) (MUN2237)
PD
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
540
370
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
264
287
°C/W
TJ, Tstg
−55 to +150
°C
246
400
2.0
3.2
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2237L)
Total Device Dissipation
TA = 25°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
508
311
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
174
208
°C/W
TJ, Tstg
−55 to +150
°C
202
310
1.6
2.5
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5237)
Total Device Dissipation
TA = 25°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
618
403
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
280
332
°C/W
TJ, Tstg
−55 to +150
°C
200
300
1.6
2.4
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC144WE)
Total Device Dissipation
TA = 25°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Junction and Storage Temperature Range
mW/°C
RqJA
600
400
°C/W
TJ, Tstg
−55 to +150
°C
260
600
2.0
4.8
mW
THERMAL CHARACTERISTICS (SOT−723) (DTC144WM3)
Total Device Dissipation
TA = 25°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
Thermal Resistance,
Junction to Ambient
1.
2.
3.
4.
(Note 1)
(Note 2)
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
www.onsemi.com
3
RqJA
480
205
mW/°C
°C/W
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS (SOT−723) (DTC144WM3)
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
www.onsemi.com
4
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
254
297
2.0
2.4
mW
THERMAL CHARACTERISTICS (SOT−1123) (NSBC144WF3)
PD
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
(Note 3)
(Note 4)
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
RqJA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
RqJL
193
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
100
−
−
500
−
−
0.13
50
−
−
50
−
−
80
140
−
−
−
0.25
−
1.8
1.2
4.0
2.3
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
Collector *Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 5.0 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.3 V, IC = 2.0 mA)
Vi(on)
Output Voltage (on)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
Vdc
Vdc
Vdc
Vdc
Vdc
Input Resistor
R1
32.9
47
61.1
Resistor Ratio
R1/R2
1.7
2.1
2.6
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
www.onsemi.com
5
kW
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
1
1000
IC/IB = 10
0.1
VCE = 10 V
25°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3
150°C
−55°C
0
10
20
30
40
100
−55°C
10
1
0.1
0.01
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
Figure 3. DC Current Gain
3.6
100
2.8
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
3.2
2.4
2
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
10
−55°C
25°C
1
150°C
0.1
VO = 5 V
0.01
0
4
8
12
16
20
24
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
150°C
25°C
25°C
−55°C
10
150°C
1
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
www.onsemi.com
6
50
28
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
1
1000
IC/IB = 10
0.1
VCE = 10 V
25°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
NSBC144WF3
150°C
−55°C
0
10
20
30
40
100
−55°C
10
1
0.1
0.01
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
100
2
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25°C
1.6
1.2
0.8
0.4
0
10
20
30
40
50
10
−55°C
25°C
1
150°C
0.1
VO = 5 V
0.01
0
4
8
12
16
20
24
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 8. DC Current Gain
2.4
0
150°C
25°C
25°C
−55°C
10
150°C
1
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
www.onsemi.com
7
50
28
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
A1
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
L
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
8
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
10
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
HE
C
0.20 (0.008) E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
HE
2
2X
2X
b
e
0.08 X Y
SIDE VIEW
TOP VIEW
3X
MILLIMETERS
DIM MIN
NOM
MAX
A
0.45
0.50
0.55
b
0.15
0.21
0.27
b1
0.25
0.31
0.37
C
0.07
0.12
0.17
D
1.15
1.20
1.25
E
0.75
0.80
0.85
0.40 BSC
e
HE
1.15
1.20
1.25
0.29 REF
L
L2
0.15
0.20
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
L
1
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
12
MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
1
3
E
2
TOP VIEW
A
c
DIM
A
b
b1
c
D
E
e
HE
L
L2
HE
SIDE VIEW
3X
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
b
L2
MILLIMETERS
MIN
MAX
0.34
0.40
0.15
0.28
0.10
0.20
0.07
0.17
0.75
0.85
0.55
0.65
0.35
0.40
0.95
1.05
0.185 REF
0.05
0.15
0.08 X Y
e
2X
3X
b1
L
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
13
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
DTC144W/D