MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) Features •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Moisture Sensitivity Level: 1 •ESD Rating - Human Body Model: Class 1 PIN 2 BASE (INPUT) R1 R2 PIN 1 EMITTER (GROUND) - Machine Model: Class B •The SC-59 Package can be Soldered Using Wave or Reflow •The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die 2 •Pb-Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector‐Base Voltage VCBO 50 Vdc Collector‐Emitter Voltage VCEO 50 Vdc IC 100 mAdc Rating Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW °C/W Thermal Resistance, Junction‐to‐Ambient RqJA 540 (Note 1) 370 (Note 2) °C/W Thermal Resistance, Junction‐to‐Lead RqJL 264 (Note 1) 287 (Note 2) °C/W -55 to +150 °C Junction and Storage Temperature Range TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 inch Pad. © Semiconductor Components Industries, LLC, 2007 July, 2007 - Rev. 13 1 SC-59 CASE 318D STYLE 1 MARKING DIAGRAM 8xMG G 1 THERMAL CHARACTERISTICS Characteristic 3 1 8x = Device Code (Refer to page 2) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the Device Marking and Resistor Values table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MUN2211T1/D MUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN2211T1 MUN2211T1G MUN2211T3 MUN2211T3G MUN2212T1 MUN2212T1G MUN2213T1 MUN2213T1G MUN2214T1 MUN2214T1G MUN2214T3 MUN2214T3G MUN2215T1 MUN2215T1G MUN2216T1 MUN2216T1G MUN2230T1 MUN2230T1G MUN2231T1 (Note 3) MUN2231T1G (Note 3) MUN2232T1 MUN2232T1G MUN2233T1 MUN2233T1G MUN2234T1 (Note 3) MUN2234T1G (Note 3) MUN2236T1 MUN2236T1G MUN2237T1 MUN2237T1G MUN2240T1 (Note 3) MUN2240T1G (Note 3) MUN2241T1 (Note 3) MUN2241T1G (Note 3) Package Marking R1 (K) R2 (K) Shipping† SC-59 8A 10 10 3000/Tape & Reel SC-59 (Pb-Free) 8A 10 10 3000/Tape & Reel SC-59 8A 10 10 10,000/Tape & Reel SC-59 (Pb-Free) 8A 10 10 10,000/Tape & Reel SC-59 8B 22 22 3000/Tape & Reel SC-59 (Pb-Free) 8B 22 22 3000/Tape & Reel SC-59 8C 47 47 3000/Tape & Reel SC-59 (Pb-Free) 8C 47 47 3000/Tape & Reel SC-59 8D 10 47 3000/Tape & Reel SC-59 (Pb-Free) 8D 10 47 3000/Tape & Reel SC-59 8D 10 47 10,000/Tape & Reel SC-59 (Pb-Free) 8D 10 47 10,000/Tape & Reel SC-59 8E 10 ∞ 3000/Tape & Reel SC-59 (Pb-Free) 8E 10 ∞ 3000/Tape & Reel SC-59 8F 4.7 ∞ 3000/Tape & Reel SC-59 (Pb-Free) 8F 4.7 ∞ 3000/Tape & Reel SC-59 8G 1.0 1.0 3000/Tape & Reel SC-59 (Pb-Free) 8G 1.0 1.0 3000/Tape & Reel SC-59 8H 2.2 2.2 3000/Tape & Reel SC-59 (Pb-Free) 8H 2.2 2.2 3000/Tape & Reel SC-59 8J 4.7 4.7 3000/Tape & Reel SC-59 (Pb-Free) 8J 4.7 4.7 3000/Tape & Reel SC-59 8K 4.7 47 3000/Tape & Reel SC-59 (Pb-Free) 8K 4.7 47 3000/Tape & Reel SC-59 8L 22 47 3000/Tape & Reel SC-59 (Pb-Free) 8L 22 47 3000/Tape & Reel SC-59 8N 100 100 3000/Tape & Reel SC-59 (Pb-Free) 8N 100 100 3000/Tape & Reel SC-59 8P 47 22 3000/Tape & Reel SC-59 (Pb-Free) 8P 47 22 3000/Tape & Reel SC-59 8T 47 ∞ 3000/Tape & Reel SC-59 (Pb-Free) 8T 47 ∞ 3000/Tape & Reel SC-59 8U 100 ∞ 3000/Tape & Reel SC-59 (Pb-Free) 8U 100 ∞ 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit ICBO - - 100 nAdc ICEO - - 500 nAdc IEBO - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 mAdc Collector‐Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc Collector‐Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 - - - 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Characteristic OFF CHARACTERISTICS Collector‐Base Cutoff Current (VCB = 50 V, IE = 0) Collector‐Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter‐Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector‐Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G VCE(sat) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2236T1, G MUN2230T1, G MUN2231T1, G MUN2237T1, G MUN2241T1, G MUN2215T1, G MUN2216T1, G MUN2232T1, G MUN2234T1, G MUN2240T1, G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 - - R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 130 R1/R2 0.8 0.8 0.8 0.17 0.8 0.8 0.8 0.055 0.38 0.8 1.7 - 1.0 1.0 1.0 0.21 1.0 1.0 1.0 0.12 0.47 1.0 2.15 - 1.2 1.2 1.2 0.25 1.2 1.2 1.2 0.185 0.56 1.2 2.6 - Unit ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor VOL MUN2211T1, G MUN2212T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2213T1, G MUN2240T1, G MUN2236T1, G MUN2237T1, G MUN2241T1, G Vdc VOH MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2234T1, G MUN2230T1, G MUN2215T1, G MUN2216T1, G MUN2231T1, G MUN2232T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G Resistor Ratio MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 4 Vdc kW MUN2211T1 Series PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 RqJA = 370°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 5 150 MUN2211T1 Series 1 1000 IC/IB = 10 VCE = 10 V TA=-25°C 25°C 75°C 0.1 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25°C 10 0 Figure 4. Output Capacitance 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) TA=-25°C VO = 0.2 V 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 50 10 MUN2211T1 Series 1000 1 IC/IB = 10 VCE = 10 V TA=-25°C TA=75°C 25°C 25°C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1 75°C 0.1 0.01 -25°C 100 10 0.001 40 20 60 IC, COLLECTOR CURRENT (mA) 0 80 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 2 1 75°C 25°C TA=-25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 0.001 50 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 3 100 10 TA=-25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 7 50 MUN2211T1 Series 10 1000 TA=-25°C IC/IB = 10 25°C 1 VCE = 10 V TA=75°C hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1 75°C 0.1 25°C -25°C 100 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 10 80 10 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=-25°C 10 1 0.1 0.01 0.2 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 0.6 0 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 0.8 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN2211T1 Series 300 1 TA=-25°C IC/IB = 10 TA=75°C VCE = 10 250 25°C hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1 0.1 75°C 0.01 25°C 200 -25°C 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC 100 75°C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25°C TA=-25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=-25°C VO= 0.2 V 25°C 75°C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 50 MUN2211T1 Series 1 1000 IC/IB = 10 75°C 0.1 -25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = -25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 Figure 23. DC Current Gain 100 4 IC, COLLECTOR CURRENT (mA) 4.5 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 75°C 10 25°C 1 TA = -25°C 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 24. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 50 MUN2211T1 Series 1 1000 75°C 0.1 -25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25°C 10 1 50 25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 4 3.5 100 Figure 28. DC Current Gain 4.5 3 2.5 2 1.5 1 0.5 75°C 10 25°C TA = -25°C 1 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 29. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 11 50 MUN2211T1 Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1 75°C 0.1 -25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 75°C 10 25°C TA = -25°C VCE = 10 V 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = -25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 34. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 12 50 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1 75°C 0.1 -25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = -25°C 10 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC 100 Figure 38. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 6 f = 1 MHz IE = 0 V TA = 25°C 5 4 3 2 1 0 75°C 10 25°C 1 TA = -25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 39. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 13 50 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1 75°C -25°C 25°C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75°C 25°C 10 1 30 TA = -25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 3.5 f = 1 MHz IE = 0 V TA = 25°C 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = -25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 44. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 14 25 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA=-25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1 25°C 75°C 0.1 75°C 25°C 100 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 TA=-25°C 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 47. VCE(sat) versus IC Figure 48. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 5 4.5 f = 1 MHz lE = 0 V TA = 25°C 4 3.5 3 2.5 2 1.5 1 0.5 0 75°C TA=-25°C 10 25°C 1 VO = 5 V 0.1 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 49. Output Capacitance 0 5 15 20 25 30 10 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=-25°C 75°C 10 1 0.1 0 5 35 40 Figure 50. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 10 20 15 25 IC, COLLECTOR CURRENT (mA) 30 Figure 51. Input Voltage versus Output Current http://onsemi.com 15 35 MUN2211T1 Series 1000 1 VCE = 10 V IC/IB = 10 75°C TA=-25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1 25°C 75°C 0.1 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 1 Figure 53. DC Current Gain 2 IC, COLLECTOR CURRENT (mA) 100 1.6 1.4 1.2 1 0.8 0.6 f = 1 MHz lE = 0 V TA = 25°C 75°C TA=-25°C 10 25°C 1 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 Figure 54. Output Capacitance 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 25°C 75°C 10 1 0 5 14 16 Figure 55. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.8 0.2 0 100 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC 0.4 25°C 10 1 40 TA=-25°C 100 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 Figure 56. Input Voltage versus Output Current http://onsemi.com 16 40 MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 57. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 58. Open Collector Inverter: Inverts the Input Signal Figure 59. Inexpensive, Unregulated Current Source http://onsemi.com 17 MUN2211T1 Series PACKAGE DIMENSIONS SC-59 CASE 318D-04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 E DIM A A1 b c D E e L HE 1 b e C A MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR L A1 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches 0.8 0.031 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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