MUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base--emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC--70/SOT--323 package which is designed for low power surface mount applications. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC--70/SOT--323 package can be soldered using wave or reflow. The modified gull--winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector--Base Voltage VCBO 50 Vdc Collector--Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) mW Rating Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C mW/C Thermal Resistance, Junction--to--Ambient RθJA 618 (Note 1) 403 (Note 2) C/W Thermal Resistance, Junction--to--Lead RθJL 280 (Note 1) 332 (Note 2) C/W TJ, Tstg -- 55 to +150 C Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR--4 @ Minimum Pad. 2. FR--4 @ 1.0 x 1.0 inch Pad. Semiconductor Components Industries, LLC, 2010 October, 2010 -- Rev. 9 1 http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 1 BASE (INPUT) R1 R2 3 1 2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) SC--70/SOT--323 CASE 419 STYLE 3 MARKING DIAGRAM 8x M G G 8x = Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Publication Order Number: MUN5211T1/D MUN5211T1G Series DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping† MUN5211T1G SC--70/SOT--323 (Pb--Free) 8A 10 10 3000 / Tape & Reel MUN5212T1G SC--70/SOT--323 (Pb--Free) 8B 22 22 3000 / Tape & Reel MUN5213T1G SC--70/SOT--323 (Pb--Free) 8C 47 47 3000 / Tape & Reel MUN5214T1G SC--70/SOT--323 (Pb--Free) 8D 10 47 3000 / Tape & Reel MUN5215T1G SC--70/SOT--323 (Pb--Free) 8E 10 3000 / Tape & Reel MUN5216T1G (Note 3) SC--70/SOT--323 (Pb--Free) 8F 4.7 3000 / Tape & Reel MUN5230T1G SC--70/SOT--323 (Pb--Free) 8G 1.0 1.0 3000 / Tape & Reel MUN5231T1G (Note 3) SC--70/SOT--323 (Pb--Free) 8H 2.2 2.2 3000 / Tape & Reel MUN5232T1G SC--70/SOT--323 (Pb--Free) 8J 4.7 4.7 3000 / Tape & Reel MUN5233T1G SC--70/SOT--323 (Pb--Free) 8K 4.7 47 3000 / Tape & Reel MUN5234T1G (Note 3) SC--70/SOT--323 (Pb--Free) 8L 22 47 3000 / Tape & Reel MUN5235T1G SC--70/SOT--323 (Pb--Free) 8M 2.2 47 3000 / Tape & Reel MUN5236T1G (Note 3) SC--70/SOT--323 (Pb--Free) 8N 100 100 3000 / Tape & Reel MUN5237T1G (Note 3) SC--70/SOT--323 (Pb--Free) 8P 47 22 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5211T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector--Base Cutoff Current (VCB = 50 V, IE = 0) ICBO -- -- 100 nAdc Collector--Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO -- -- 500 nAdc IEBO --------------- --------------- 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector--Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 -- -- Vdc Collector--Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 -- -- Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 --------------- --------------- --------------- 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Characteristic OFF CHARACTERISTICS Emitter--Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector--Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G VCE(sat) MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5236T1G MUN5230T1G MUN5231T1G MUN5237T1G MUN5215T1G MUN5216T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc MUN5211T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max --------------- --------------- 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 --------------- --------------- 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 0.8 0.8 0.17 --0.8 0.8 0.8 0.055 0.38 0.038 0.8 1.7 1.0 1.0 1.0 0.21 --1.0 1.0 1.0 0.1 0.47 0.047 1.0 2.1 1.2 1.2 1.2 0.25 --1.2 1.2 1.2 0.185 0.56 0.056 1.2 2.6 Unit ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) Input Resistor Resistor Ratio VOL MUN5211T1G MUN5212T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5213T1G MUN5236T1G MUN5237T1G VOH MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5234T1G MUN5235T1G MUN5230T1G MUN5215T1G MUN5216T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5236T1G MUN5237T1G R1 MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G R1/R2 MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 Vdc Vdc kΩ MUN5211T1G Series PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -- 50 RθJA = 403C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 5 150 MUN5211T1G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211T1G TA = --25C 25C 0.1 75C 0 20 40 IC, COLLECTOR CURRENT (mA) TA = 75C 25C --25C 100 0.01 0.001 VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25C 75C f = 1 MHz IE = 0 V TA = 25C TA = --25C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA = --25C 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 40 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 6 50 10 MUN5211T1G Series 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212T1G IC/IB = 10 25C TA = --25C 0.1 75C 0.01 0.001 0 20 --25C 100 10 1 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 2 1 75C 25C TA = --25C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = --25C 10 25C 75C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) TA = 75C 25C 10 50 40 VCE = 10 V 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 7 MUN5211T1G Series 10 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213T1G 1 25C TA = --25C 75C 0.1 0.01 0 TA = 75C 25C --25C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V 10 IC, COLLECTOR CURRENT (mA) 1 Figure 12. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25C 75C 0.6 TA = --25C 10 1 0.1 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA = --25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25C 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN5211T1G Series 1 300 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5214T1G TA = --25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 200 --25C 150 100 50 0 80 TA = 75C VCE = 10 250 2 1 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA = 75C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25C --25C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = --25C 25C 75C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 10 MUN5211T1G Series 1 1000 IC/IB = 10 75C 0.1 --25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = --25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 75C 10 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 24. Output Capacitance 25C 1 TA = --25C 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 1 25C 75C VO = 0.2 V 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 4.5 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215T1G 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 50 MUN5211T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230T1G 75C 0.1 --25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 25C TA = --25C VCE = 10 V 1 50 75C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = --25C 0.1 0.01 0.001 50 Figure 29. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 4 100 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 11 50 MUN5211T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232T1G 75C 0.1 --25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = --25C 10 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = --25C 0.1 0.01 0.001 50 Figure 34. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 33. DC Current Gain 6 0 25C 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 12 50 MUN5211T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233T1G 75C --25C 25C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75C 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25C 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = --25C 0.1 0.01 0.001 50 Figure 39. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3 100 Figure 38. DC Current Gain 4 3.5 25C 10 1 30 TA = --25C 100 20 5 10 15 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 13 25 MUN5211T1G Series 1000 1 VCE = 10 V IC/IB = 10 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235T1G 75C 0.1 --25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25C 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75C 1 TA = --25C 0.1 0.01 0.001 50 25C VO = 5 V 0 Figure 44. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 75C 1 25C TA = --25C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3.5 100 Figure 43. DC Current Gain 4.5 4 25C 10 1 50 TA = --25C 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 14 50 MUN5211T1G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 47. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 48. Open Collector Inverter: Inverts the Input Signal Figure 49. Inexpensive, Unregulated Current Source http://onsemi.com 15 MUN5211T1G Series PACKAGE DIMENSIONS SC--70 (SOT--323) CASE 419--04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 http://onsemi.com 16 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUN5211T1/D