NGD18N40CLB D

NGD18N40CLB,
NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
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18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
Features
•
•
•
•
•
•
•
•
•
•
•
•
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Emitter Ballasting for Short−Circuit Capability
These are Pb−Free Devices
C
G
RGE
E
4
1 2
3
MARKING DIAGRAM
1
Gate
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
430
VDC
Collector−Gate Voltage
VCER
430
VDC
Gate−Emitter Voltage
VGE
18
VDC
IC
15
50
ADC
AAC
Rating
Collector Current−Continuous
@ TC = 25°C − Pulsed
DPAK
CASE 369C
STYLE 7
YWW
G18
N40xG
4
Collector
3
Emitter
G18N40x
Y
WW
G
= Device Code
x = B or A
= Year
= Work Week
= Pb−Free Device
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
800
V
PD
115
0.77
Watts
W/°C
Device
Package
Shipping†
−55 to
+175
°C
NGD18N40CLBT4G
DPAK
(Pb−Free)
2500/Tape &
Reel
NGD18N40ACLBT4G
DPAK
(Pb−Free)
2500/Tape &
Reel
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
kV
2
Collector
8.0
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 10
1
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGD18N40CLB/D
NGD18N40CLB, NGD18N40ACLB
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.2 A, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C
EAS
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS(R)
Value
Unit
mJ
400
400
300
mJ
2000
MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
tsc1
750
ms
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
tsc2
5.0
ms
RθJC
1.3
°C/W
RθJA
95
°C/W
TL
275
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
IC = 2.0 mA
TJ = −40°C to
150°C
380
395
420
VDC
IC = 10 mA
TJ = −40°C to
150°C
390
405
430
TJ = 25°C
−
2.0
20
TJ = 150°C
−
10
40*
TJ = −40°C
−
1.0
10
TJ = 25°C
−
−
2.0
TJ = 25°C
−
0.7
1.0
TJ = 150°C
−
12
25*
TJ = −40°C
−
0.1
1.0
TJ = 25°C
27
33
37
TJ = 150°C
30
36
40
TJ = −40°C
25
32
35
IG = 5.0 mA
TJ = −40°C to
150°C
11
13
15
VDC
VGE = 10 V
TJ = −40°C to
150°C
384
640
700
mADC
−
TJ = −40°C to
150°C
10
16
26
kW
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
BVCES
ICES
VCE = 350 V,
VGE = 0 V
VCE = 15 V,
VGE = 0 V
Reverse Collector−Emitter Leakage Current
IECS
VCE = −24 V
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
IC = −75 mA
Gate−Emitter Clamp Voltage
BVGES
Gate−Emitter Leakage Current
IGES
Gate Emitter Resistor
RGE
mADC
mA
VDC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
*Maximum Value of Characteristic across Temperature Range.
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2
NGD18N40CLB, NGD18N40ACLB
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
1.1
1.4
1.9
VDC
TJ = 150°C
0.75
1.0
1.4
TJ = −40°C
1.2
1.6
2.1*
−
−
3.4
−
mV/°C
TJ = 25°C
1.0
1.4
1.6
VDC
TJ = 150°C
0.9
1.3
1.6
TJ = −40°C
1.1
1.45
1.7*
TJ = 25°C
1.3
1.6
1.9*
TJ = 150°C
1.2
1.55
1.8
TJ = −40°C
1.4
1.6
1.9*
TJ = 25°C
1.4
1.8
2.05
TJ = 150°C
1.4
1.8
2.0
TJ = −40°C
1.4
1.8
2.1*
TJ = 25°C
1.8
2.2
2.5
TJ = 150°C
2.0
2.4
2.6*
TJ = −40°C
1.7
2.1
2.5
TJ = 25°C
1.3
1.8
2.0*
TJ = 150°C
1.3
1.75
2.0*
TJ = −40°C
1.4
1.8
2.0*
IC = 6.5 A,
VGE = 3.7 V
TJ = 25°C
−
−
1.65
VCE = 5.0 V, IC = 6.0 A
TJ = −40°C to
150°C
8.0
14
25
Mhos
400
800
1000
pF
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = −40°C to
150°C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
Collector−to−Emitter On−Voltage
−
−
VCE(on)
IC = 6.0 A,
VGE = 4.0 V
IC = 8.0 A,
VGE = 4.0 V
IC = 10 A,
VGE = 4.0 V
IC = 15 A,
VGE = 4.0 V
IC = 10 A,
VGE = 4.5 V
Forward Transconductance
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
50
75
100
4.0
7.0
10
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kW, RL = 46 W,
TJ = 25°C
−
4.0
10
Fall Time (Resistive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kW, RL = 46 W,
TJ = 25°C
−
9.0
15
Turn−On Delay Time
td(on)
VCC = 10 V, IC = 6.5 A
RG = 1.0 kW, RL = 1.5 W
TJ = 25°C
−
0.7
4.0
tr
VCC = 10 V, IC = 6.5 A
RG = 1.0 kW, RL = 1.5 W
TJ = 25°C
−
4.5
7.0
Rise Time
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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3
mSec
mSec
NGD18N40CLB, NGD18N40ACLB
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10 V
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
60
6.0 V
50
5.0 V
TJ = 25°C
40
4.5 V
4.0 V
30
3.5 V
20
3.0 V
10
2.5 V
0
1
3
2
4
5
6
7
8
9
10
TJ = −40°C
4.5 V
40
4.0 V
30
3.5 V
20
3.0 V
10
2.5 V
0
1
2
3
4
5
6
7
8
9
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
10
60
IC, COLLECTOR CURRENT (AMPS)
60
IC, COLLECTOR CURRENT (AMPS)
5.0 V
50
0
0
VGE = 10 V
6.0 V
50
TJ = 150°C
40
5.0 V
4.5 V
30
4.0 V
3.5 V
20
3.0 V
10
2.5 V
VCE = 10 V
50
TJ = −40°C
40
TJ = 25°C
30
TJ = 150°C
20
10
0
0
0
1
2
3
4
5
6
7
8
9
1
10
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
VGE = 5 V
IC = 25 A
3.0
IC = 20 A
2.5
IC = 15 A
2.0
IC = 10 A
1.5
IC = 5 A
1.0
0.5
0.0
−50
−25
0
25
50
75
100
3
4
5
Figure 4. Transfer Characteristics
4.0
3.5
2
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 3. Output Characteristics
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
6.0 V
VGE = 10 V
125
150
3
TJ = 25°C
2.5
IC = 15 A
2
IC = 10 A
1.5
IC = 5 A
1
0.5
0
3
TJ, JUNCTION TEMPERATURE (°C)
4
5
6
7
8
9
GATE−TO−EMITTER VOLTAGE (VOLTS)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
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4
10
NGD18N40CLB, NGD18N40ACLB
10000
3
TJ = 150°C
IC = 15 A
2
C, CAPACITANCE (pF)
2.5
IC = 10 A
1.5
IC = 5 A
1
1000
Ciss
100
Coss
10
Crss
0.5
3
4
5
6
7
8
9
0
10
40
60
80
140 160 180 200
100 120
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
Figure 8. Capacitance Variation
30
2
1.8
VTH + 4 σ
VTH − 4 σ
1.2
1
0.8
0.6
0.4
0.2
0
−50 −30 −10
10
30
VCC = 50 V
VGE = 5.0 V
RG = 1000 W
25
VTH
1.6
1.4
20
GATE TO EMITTER VOLTAGE (VOLTS)
50
70
90
L = 1.8 mH
20
15
L = 3 mH
10
L = 6 mH
5
0
−50 −25
110 130 150
0
25
50
75
100
125
150 175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
12
30
VCC = 50 V
VGE = 5.0 V
RG = 1000 W
25
L = 1.8 mH
20
10
SWITCHING TIME (ms)
IL, LATCH CURRENT (AMPS)
1
0
0
IL, LATCH CURRENT (AMPS)
GATE THRESHOLD VOLTAGE (VOLTS)
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
L = 3 mH
15
L = 6 mH
10
8
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 10 A
L = 300 mH
tf
6
td(off)
4
2
5
0
−50 −25
0
25
50
75
100
125
150
0
−50 −30 −10
175
10
30
50
70
90
110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
Figure 12. Inductive Switching Fall Time
versus Temperature
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5
NGD18N40CLB, NGD18N40ACLB
100
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
100
DC
10
100 ms
1 ms
1
10 ms
100 ms
0.1
0.01
1
100 ms
0.1
100 ms
1 ms
10 ms
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
Figure 14. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 1255C)
100
100
t1 = 1 ms, D = 0.05
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
10 DC
t1 = 2 ms, D = 0.10
10
t1 = 3 ms, D = 0.30
1
0.1
0.01
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
10
t1 = 3 ms, D = 0.30
1
0.1
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
Figure 16. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
VBATT = 16 V
VBATT = 16 V
RL = 0.1 W
RL = 0.1 W
L = 10 mH
L = 10 mH
5.0 V
5.0 V
VIN
VIN
RG = 1 kW
RG = 1 kW
RS = 55 mW
Figure 17. Circuit Configuration for
Short Circuit Test #1
Figure 18. Circuit Configuration for
Short Circuit Test #2
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6
NGD18N40CLB, NGD18N40ACLB
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
1000
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
0.01
1
0.1
Single Pulse
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
t1
0.01
t2
TJ(pk) − TA = P(pk) RqJA(t)
RqJC X R(t) for t ≤ 0.2 s
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
t,TIME (S)
Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area)
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7
NGD18N40CLB, NGD18N40ACLB
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
A
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
b2
e
c
SIDE VIEW
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
STYLE 7:
PIN 1.
2.
3.
4.
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GATE
COLLECTOR
EMITTER
COLLECTOR
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NGD18N40CLB/D