NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 18 AMPS, 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V C Features • Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • • • • Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate−Emitter Resistor (RGE) Emitter Ballasting for Short−Circuit Capability These are Pb−Free Devices G RGE E D2PAK CASE 418B STYLE 4 MARKING DIAGRAM 4 Collector MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 430 VDC Collector−Gate Voltage VCER 430 VDC Gate−Emitter Voltage VGE 18 VDC IC 18 50 ADC AAC Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V PD 115 0.77 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range kV 8.0 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. GB 18N40xG AYWW 1 Gate GB18N40x x A Y WW G 3 Emitter 2 Collector = Device Code = B or A = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NGB18N40CLBT4G D2PAK 800/Tape & Reel (Pb−Free) NGB18N40ACLBT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 December, 2011 − Rev. 4 1 Publication Order Number: NGB18N40CLB/D NGB18N40CLB, NGB18N40ACLB UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Symbol Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C EAS Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) Value Unit mJ 400 300 mJ 2000 MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C) Characteristic Symbol Value Unit Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) tsc1 750 ms Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc2 5.0 ms Symbol Value Unit RqJC 1.3 °C/W RqJA 50 °C/W TL 275 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case D2PAK (Note 1) Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 150°C 380 395 420 VDC IC = 10 mA TJ = −40°C to 150°C 390 405 430 TJ = 25°C − 2.0 20 TJ = 150°C − 10 40* TJ = −40°C − 1.0 10 TJ = 25°C − 0.7 2.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 32 35 TJ = −40°C to 150°C 11 13 15 VDC TJ = −40°C to 150°C 384 640 100 0 mADC TJ = −40°C to 150°C 10 16 26 kW VDC OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 350 V, VGE = 0 V Reverse Collector−Emitter Leakage Current IECS VCE = −24 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Gate−Emitter Clamp Voltage BVGES Gate−Emitter Leakage Current IGES Gate Emitter Resistor RGE IG = 5.0 mA VGE = 10 V − mADC mA VDC ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Threshold Temperature Coefficient (Negative) VGE(th) TJ = 25°C 1.1 1.4 1.9 IC = 1.0 mA, VGE = VCE TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* − − − 3.4 − − *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 mV/°C NGB18N40CLB, NGB18N40ACLB ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.0 1.4 1.6 VDC IC = 6.0 A, VGE = 4.0 V TJ = 150°C 0.9 1.3 1.6 TJ = −40°C 1.1 1.45 1.7* ON CHARACTERISTICS (Note 2) Collector−to−Emitter On−Voltage Forward Transconductance VCE(on) gfs TJ = 25°C 1.3 1.6 1.9* IC = 8.0 A, VGE = 4.0 V TJ = 150°C 1.2 1.55 1.8 TJ = −40°C 1.4 1.6 1.9* TJ = 25°C 1.4 1.8 2.05 IC = 10 A, VGE = 4.0 V TJ = 150°C 1.5 1.8 2.0 TJ = −40°C 1.4 1.8 2.1* TJ = 25°C 1.8 2.2 2.5 IC = 15 A, VGE = 4.0 V TJ = 150°C 2.0 2.4 2.6* TJ = −40°C 1.7 2.1 2.5 TJ = 25°C 1.3 1.8 2.0* IC = 10 A, VGE = 4.5 V TJ = 150°C 1.3 1.75 2.0* TJ = −40°C 1.4 1.8 2.0* VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 14 25 Mhos 400 800 100 0 pF 50 75 100 4.0 7.0 10 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C SWITCHING CHARACTERISTICS td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 4.0 10 Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 9.0 15 Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 0.7 4.0 tr VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 4.5 7.0 Turn−Off Delay Time (Resistive) Rise Time *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 mSec mSec NGB18N40CLB, NGB18N40ACLB TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 50 5V 4.5 V 40 30 4V TJ = 25°C 3.5 V 20 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 4.5 V 3.5 V 20 3V 10 2.5 V 1 0 3 2 5 4 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 8 60 VGE = 10 V 5V 40 TJ = 150°C 4.5 V 30 4V 20 3.5 V 3V 10 2.5 V 0 1 2 3 4 5 7 6 55 VCE = 10 V 50 45 40 35 30 TJ = 25°C 25 20 15 10 5 0 8 0 COLLECTOR TO EMITTER VOLTAGE (VOLTS) IC = 25 A 3.0 IC = 20 A 2.5 IC = 15 A 2.0 IC = 10 A 1.5 IC = 5 A 1.0 0.5 0.0 −50 −25 0 25 50 75 100 2 3 4 5 6 7 8 Figure 4. Transfer Characteristics 4.0 VGE = 5 V 1 VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics 3.5 TJ = 150°C TJ = −40°C VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 4V TJ = −40°C 30 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 50 0 5V 40 0 8 VGE = 10 V 50 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VGE = 10 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 60 125 150 3 TJ = 25°C 2.5 IC = 15 A 2 IC = 10 A 1.5 IC = 5 A 1 0.5 0 3 TJ, JUNCTION TEMPERATURE (°C) 4 5 6 7 8 9 GATE−TO−EMITTER VOLTAGE (VOLTS) Figure 5. Collector−to−Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage http://onsemi.com 4 10 10000 3 TJ = 150°C IC = 15 A 2 IC = 10 A 1.5 1000 Ciss 100 Coss 10 Crss C, CAPACITANCE (pF) 2.5 IC = 5 A 1 0.5 0 4 5 6 7 8 10 9 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 8. Capacitance Variation 30 2 1.8 VTH + 4 s 1.6 1.4 0 GATE TO EMITTER VOLTAGE (VOLTS) VTH VTH − 4 s 1.2 1 0.8 0.6 0.4 0.2 0 −50 −30 −10 10 30 50 70 90 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 L = 2 mH 20 15 L = 3 mH 10 L = 6 mH 5 0 −50 −25 110 130 150 0 25 50 75 100 125 150 175 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Gate Threshold Voltage versus Temperature Figure 10. Minimum Open Secondary Latch Current versus Temperature 12 30 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 L = 2 mH 20 10 SWITCHING TIME (ms) IL, LATCH CURRENT (AMPS) 1 0 3 IL, LATCH CURRENT (AMPS) GATE THRESHOLD VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) NGB18N40CLB, NGB18N40ACLB L = 3 mH 15 L = 6 mH 10 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH tf 6 td(off) 4 2 5 0 −50 −25 0 25 50 75 100 125 150 0 −50 −30 −10 175 10 30 50 70 90 110 130 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 5 NGB18N40CLB, NGB18N40ACLB 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 10 100 ms 1 ms 1 10 ms 100 ms 0.1 0.01 10 100 100 ms 0.1 1000 100 ms 1 1 ms 10 ms 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 100 t1 = 1 ms, D = 0.05 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 1 0.01 1 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 0.01 10 DC 1 10 100 t1 = 1 ms, D = 0.05 t1 = 3 ms, D = 0.30 1 0.1 0.01 1000 t1 = 2 ms, D = 0.10 10 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 5.0 V VIN VIN RG = 1 kW RG = 1 kW RS = 55 mW Figure 17. Circuit Configuration for Short Circuit Test #1 Figure 18. Circuit Configuration for Short Circuit Test #2 http://onsemi.com 6 NGB18N40CLB, NGB18N40ACLB 100 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) Single Pulse t1 0.001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.00001 0.0001 0.001 TJ(pk) − TA = P(pk) RqJA(t) RqJC @ R(t) for t ≤ 0.2 s 0.01 t,TIME (S) Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) http://onsemi.com 7 0.1 1 NGB18N40CLB, NGB18N40ACLB PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K J G D DIM A B C D E F G H J K L M N P R S V W H 3 PL 0.13 (0.005) M T B M P U L SOLDERING FOOTPRINT* M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 10.49 8.38 F VIEW W−W 3 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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