Product Overview

Product Overview
NGD18N40A: Ignition IGBT, N-Channel, 18 A, 400 V
For complete documentation, see the data sheet
Product Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped
protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage
and high current switching is required. This device is a significant enhancement to the standard DPAK ignition IGBT device,
NGD15N41CLT4. This device offers higher Unclamped Inductive Switching (UIS) energy and lower Collector-Emitter Saturation
Voltage, Vce(on).
Features
•
•
•
•
•
•
•
•
•
DPAK Package Offers Smaller Footprint and Increased Board Space
New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated Gate-Emitter ESD Protection
Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor and Gate-Emitter Resistor
Emitter Ballasting for Short-Circuit Protection
Applications
End Products
• Ignition Systems
• Automotive
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
NGD18N40ACLBT4G
AEC Qualified
Active
400
1.8
18
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
PPAP
Capable
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
400
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
115
No
DPA
K-3