NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. • Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Integrated Gate−Emitter Resistor (RGE) • Emitter Ballasting for Short−Circuit Capability http://onsemi.com 18 AMPS 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V C G RGE E D2PAK CASE 418B STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 430 VDC Collector−Gate Voltage VCER 430 VDC Gate−Emitter Voltage VGE 18 VDC IC 18 50 ADC AAC Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V PD 115 0.77 Watts W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range MARKING DIAGRAM 4 Collector GB 18N40B YWW kV 8.0 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 Gate 3 Emitter 2 Collector GB18N40B = NGB18N40CLB Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping † NGB18N40CLBT4 D2PAK 800/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 1 1 Publication Order Number: NGB18N40CLB/D NGB18N40CLBT4 UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C EAS Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) Value Unit mJ 400 300 mJ 2000 MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C) Symbol Value Unit Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) Characteristic tsc1 750 ms Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc2 5.0 ms Symbol Value Unit RqJC 1.3 °C/W RqJA 50 °C/W TL 275 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient D2PAK (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds http://onsemi.com 2 NGB18N40CLBT4 ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit IC = 2.0 2 0 mA TJ = −40°C 40 C to 150°C 380 395 420 VDC IC = 10 mA TJ = −40°C to 150°C 390 405 430 TJ = 25°C − 2.0 20 VCE = 350 V, VGE = 0 V TJ = 150°C − 10 40* TJ = −40°C − 1.0 10 TJ = 25°C − 0.7 2.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 32 35 IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC VGE = 10 V TJ = −40°C to 150°C 384 640 1000 mADC − TJ = −40°C to 150°C 10 16 26 kW TJ = 25°C 1.1 1.4 1.9 VDC TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* − − 3.4 − mV/°C TJ = 25°C 1.0 1.4 1.6 VDC TJ = 150°C 0.9 1.3 1.6 TJ = −40°C 1.1 1.45 1.7* OFF CHARACTERISTICS Collector Collector−Emitter Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Leakage Current BVCES ICES IECS VCE = −24 V Reverse Collector−Emitter Clamp Voltage BVCES(R) ( ) IC = −75 mA Gate−Emitter Clamp Voltage BVGES Gate−Emitter Leakage Current IGES Gate Emitter Resistor RGE mADC mA VDC ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage VGE(th) ( ) IC = 1.0 1 0 mA mA, VGE = VCE − − VCE(on) ( ) IC = 6.0 A, VGE = 4.0 V TJ = 25°C 1.3 1.6 1.9* IC = 8.0 A, VGE = 4.0 V TJ = 150°C 1.2 1.55 1.8 TJ = −40°C 1.4 1.6 1.9* TJ = 25°C 1.4 1.8 2.05 IC = 10 A, VGE = 4.0 V TJ = 150°C 1.5 1.8 2.0 TJ = −40°C 1.4 1.8 2.1* TJ = 25°C 1.8 2.2 2.5 IC = 15 A, VGE = 4.0 V TJ = 150°C 2.0 2.4 2.6* TJ = −40°C 1.7 2.1 2.5 TJ = 25°C 1.3 1.8 2.0* IC = 10 A, VGE = 4.5 V TJ = 150°C 1.3 1.75 2.0* TJ = −40°C 1.4 1.8 2.0* *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 NGB18N40CLBT4 ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 14 25 Mhos TJ = −40°C 40°C to 150 C 150°C 400 800 1000 pF VCC = 25 V, VGE = 0 V f = 1.0 MHz 50 75 100 4.0 7.0 10 ON CHARACTERISTICS (Note 2) Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS SWITCHING CHARACTERISTICS td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 4.0 10 Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 9.0 15 Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 0.7 4.0 tr VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 4.5 7.0 Turn−Off Delay Time (Resistive) Rise Time *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 4 mSec mSec NGB18N40CLBT4 TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 50 5V 4.5 V 40 30 4V TJ = 25°C 3.5 V 20 3V 10 0 2.5 V 1 0 2 3 4 5 7 6 4.5 V 40 3.5 V 20 3V 10 2.5 V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 8 60 VGE = 10 V 5V 40 TJ = 150°C 4.5 V 30 4V 20 3.5 V 3V 10 2.5 V 0 1 2 3 4 5 6 7 55 VCE = 10 V 50 45 40 35 30 TJ = 25°C 25 20 15 10 5 0 8 0 COLLECTOR TO EMITTER VOLTAGE (VOLTS) IC = 25 A 3.0 IC = 20 A 2.5 IC = 15 A 2.0 IC = 10 A 1.5 IC = 5 A 1.0 0.5 0.0 −50 −25 0 25 50 75 100 2 3 4 6 5 7 8 Figure 4. Transfer Characteristics 4.0 VGE = 5 V 1 VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics 3.5 TJ = 150°C TJ = −40°C VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 4V TJ = −40°C 30 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 50 0 5V 50 0 8 VGE = 10 V VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 60 VGE = 10 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 60 125 150 3 TJ = 25°C 2.5 IC = 15 A 2 IC = 10 A 1.5 IC = 5 A 1 0.5 0 3 TJ, JUNCTION TEMPERATURE (°C) 4 5 6 7 8 9 GATE−TO−EMITTER VOLTAGE (VOLTS) Figure 5. Collector−to−Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage http://onsemi.com 5 10 10000 3 TJ = 150°C IC = 15 A 2 IC = 10 A 1.5 1000 Ciss 100 Coss 10 Crss C, CAPACITANCE (pF) 2.5 IC = 5 A 1 0.5 0 4 5 6 7 8 9 10 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 8. Capacitance Variation 30 2 1.8 VTH + 4 s 1.6 1.4 0 GATE TO EMITTER VOLTAGE (VOLTS) VTH VTH − 4 s 1.2 1 0.8 0.6 0.4 0.2 0 −50 −30 −10 10 30 50 70 90 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 L = 2 mH 20 15 L = 3 mH 10 L = 6 mH 5 0 −50 −25 110 130 150 0 25 50 75 100 125 150 175 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Gate Threshold Voltage versus Temperature Figure 10. Minimum Open Secondary Latch Current versus Temperature 12 30 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 L = 2 mH 20 10 SWITCHING TIME (ms) IL, LATCH CURRENT (AMPS) 1 0 3 IL, LATCH CURRENT (AMPS) GATE THRESHOLD VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) NGB18N40CLBT4 L = 3 mH 15 L = 6 mH 10 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH tf 6 td(off) 4 2 5 0 −50 −25 0 25 50 75 100 125 150 0 −50 −30 −10 175 10 30 50 70 90 110 130 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 6 NGB18N40CLBT4 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 10 100 ms 1 ms 1 10 ms 100 ms 0.1 0.01 10 100 100 ms 0.1 1000 100 ms 1 1 ms 10 ms 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 100 t1 = 1 ms, D = 0.05 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 1 0.01 1 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 0.01 10 DC 1 10 100 t1 = 1 ms, D = 0.05 t1 = 3 ms, D = 0.30 1 0.1 0.01 1000 t1 = 2 ms, D = 0.10 10 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 5.0 V VIN VIN RG = 1 kW RG = 1 kW RS = 55 mW Figure 17. Circuit Configuration for Short Circuit Test #1 Figure 18. Circuit Configuration for Short Circuit Test #2 http://onsemi.com 7 NGB18N40CLBT4 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) Single Pulse t1 0.001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.00001 0.0001 0.001 TJ(pk) − TA = P(pk) RqJA(t) RqJC @ R(t) for t ≤ 0.2 s 0.01 t,TIME (S) Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) http://onsemi.com 8 0.1 1 NGB18N40CLBT4 PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 3 A S −T− SEATING PLANE DIM A B C D E F G H J K L M N P R S V K J G D 3 PL 0.13 (0.005) W H M T B M STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR P U L M F VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NGB18N40CLBT4 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 10 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NGB18N40CLB/D