MMBFJ177LT1G, SMMBFJ177LT1G JFET Chopper P−Channel − Depletion www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • 2 SOURCE Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG −25 Vdc Gate−Source Voltage VGS 25 Vdc 3 SOT−23 (TO−236AB) CASE 318−08 STYLE 10 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. FR− 5 = 1.0 0.75 0.062 in. 6Y MG G 1 6Y = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBFJ177LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SMMBFJ177LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 7 1 Publication Order Number: MMBFJ177LT1/D MMBFJ177LT1G, SMMBFJ177LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)GSS 30 − Vdc IGSS − 1.0 nAdc VGS(off) 0.8 2.5 Vdc Zero−Gate−Voltage Drain Current (VGS = 0, VDS = −15 Vdc) (Note 2) IDSS −1.5 −20 mAdc Drain Cutoff Current (VDS = −15 Vdc, VGS = 10 Vdc) ID(off) − −1.0 nAdc rDS(on) − 300 W Ciss − 11 pF Crss − 5.5 Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc) Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = −15 Vdc, ID = −10 nAdc) ON CHARACTERISTICS Drain Source On Resistance (ID = −500 mAdc) Input Capacitance VDS = 0, VGS = 10 Vdc f = 1.0 MHz Reverse Transfer Capacitance Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS 14 −8 VGS = 0 V −6 Crss, REVERSE TRANSFER CAPACITANCE (pF) VGS = 0.1 V VGS = 0.3 V −5 −4 VGS = 0.5 V −3 VGS = 0.7 V −2 VGS = 0.9 V −1 VGS = 0 V f = 1 MHz 12 10 8 6 4 2 0 0 0 −2 −4 −6 −8 −10 0 −12 −5 −10 −15 −20 VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 1. Drain Current vs. Drain−Source Voltage Figure 2. Reverse Transfer Capacitance 32 Ciss, INPUT CAPACITANCE (pF) ID, DRAIN CURRENT (mA) −7 VGS = 0 V f = 1 MHz 28 24 20 16 12 8 4 0 0 −5 −10 −15 −20 VDS, DRAIN−SOURCE VOLTAGE (V) Figure 3. Input Capacitance www.onsemi.com 2 −25 −25 MMBFJ177LT1G, SMMBFJ177LT1G PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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