2N7002W D

2N7002W, 2V7002W
Small Signal MOSFET
60 V, 340 mA, Single, N−Channel, SC−70
Features
•
•
•
•
•
ESD Protected
Low RDS(on)
Small Footprint Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
(Note 1)
1.6 W @ 10 V
60 V
340 mA
2.5 W @ 4.5 V
Applications
•
•
•
•
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
SIMPLIFIED SCHEMATIC
Gate
1
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Drain Current (Note 1)
Steady State
ID
Source
2
(Top View)
mA
TA = 25°C
TA = 85°C
310
220
TA = 25°C
TA = 85°C
340
240
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
t<5s
3
Power Dissipation (Note 1)
Steady State
t<5s
PD
Pulsed Drain Current (tp = 10 ms)
IDM
1.4
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
250
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD
2000
V
Gate−Source ESD Rating
(HBM, Method 3015)
mW
280
330
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Junction−to−Ambient − Steady State
(Note 1)
Characteristic
RqJA
450
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
375
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6
1
71 MG
G
SC−70/SOT−323
CASE 419
STYLE 8
1
2
Gate
Source
71 = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
2N7002WT1G
SC−70
(Pb−Free)
3000/Tape & Reel
2V7002WT1G
SC−70
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N7002W/D
2N7002W, 2V7002W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
71
VGS = 0 V,
VDS = 60 V
VGS = 0 V,
VDS = 50 V
Gate−to−Source Leakage Current
IGSS
V
mV/°C
TJ = 25°C
1.0
mA
TJ = 150°C
15
mA
TJ = 25°C
100
nA
10
mA
TJ = 150°C
VDS = 0 V, VGS = ±20 V
±10
mA
VDS = 0 V, VGS = ±10 V
450
nA
VDS = 0 V, VGS = ±5.0 V
150
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
VGS = VDS, ID = 250 mA
1.0
2.5
4.0
V
mV/°C
W
VGS = 10 V, ID = 500 mA
1.19
1.6
VGS = 4.5 V, ID = 200 mA
1.33
2.5
VDS = 5 V, ID = 200 mA
530
mS
24.5
pF
CHARGES AND CAPACITANCES
CISS
Input Capacitance
VGS = 0 V, f = 1 MHz,
VDS = 20 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2.2
Total Gate Charge
QG(TOT)
0.7
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
4.2
nC
0.1
0.3
0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
ns
12.2
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
tf
9.0
55.8
29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
0.8
TJ = 85°C
0.7
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
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2
2N7002W, 2V7002W
TYPICAL CHARACTERISTICS
9.0 V
8.0 V
7.0 V
6.0 V
1.2
1.2
5.0 V
4.5 V
VGS = 10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.6
4.0 V
3.5 V
0.8
3.0 V
0.4
0.8
TJ = 25°C
0.4
2.5 V
0
2
4
6
0
4
6
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
VGS = 4.5 V
TJ = 125°C
2.4
TJ = 85°C
TJ = 25°C
2.0
1.6
TJ = −55°C
1.2
0.8
0.4
0
0
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
3.2
2.8
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
3.2
VGS = 10 V
2.8
2.4
TJ = 125°C
2.0
TJ = 85°C
1.6
TJ = 25°C
1.2
TJ = −55°C
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.4
2.2
ID = 0.2 A
2.0
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 125°C
0
ID = 500 mA
1.6
ID = 200 mA
1.2
0.8
4
6
8
VGS = 4.5 V
10
VGS = 10 V
1.4
1.0
0.6
−50
0.4
2
1.8
−25
0
25
50
75
100
125
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
150
2N7002W, 2V7002W
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
30
C, CAPACITANCE (pF)
Ciss
20
TJ = 25°C
VGS = 0 V
Coss
10
Crss
0
0
4
8
12
16
5
TJ = 25°C
ID = 0.2 A
4
3
2
1
0
0
20
0.4
0.6
0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.0E−6
10
VGS = 0 V
VGS = 0 V
TJ = 150°C
IDSS, LEAKAGE (A)
IS, SOURCE CURRENT (A)
0.2
1
TJ = 85°C
TJ = 25°C
0.1
1.0E−7
TJ = 125°C
1.0E−8
TJ = 85°C
1.0E−9
TJ = 25°C
0.01
1.0E−10
0.4
0.6
0.8
1.0
1.2
5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10
15
20
25
30
35
40
45
50
55
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Drain−to−Source Leakage Current
vs. Voltage
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4
60
2N7002W, 2V7002W
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
c
A2
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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5
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2N7002W/D