2N7002W, 2V7002W Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70 Features • • • • • ESD Protected Low RDS(on) Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 1.6 W @ 10 V 60 V 340 mA 2.5 W @ 4.5 V Applications • • • • Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. SIMPLIFIED SCHEMATIC Gate 1 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Drain Current (Note 1) Steady State ID Source 2 (Top View) mA TA = 25°C TA = 85°C 310 220 TA = 25°C TA = 85°C 340 240 Drain MARKING DIAGRAM & PIN ASSIGNMENT Drain t<5s 3 Power Dissipation (Note 1) Steady State t<5s PD Pulsed Drain Current (tp = 10 ms) IDM 1.4 A Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 250 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C ESD 2000 V Gate−Source ESD Rating (HBM, Method 3015) mW 280 330 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) Characteristic RqJA 450 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 375 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 6 1 71 MG G SC−70/SOT−323 CASE 419 STYLE 8 1 2 Gate Source 71 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† 2N7002WT1G SC−70 (Pb−Free) 3000/Tape & Reel 2V7002WT1G SC−70 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N7002W/D 2N7002W, 2V7002W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS 71 VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 50 V Gate−to−Source Leakage Current IGSS V mV/°C TJ = 25°C 1.0 mA TJ = 150°C 15 mA TJ = 25°C 100 nA 10 mA TJ = 150°C VDS = 0 V, VGS = ±20 V ±10 mA VDS = 0 V, VGS = ±10 V 450 nA VDS = 0 V, VGS = ±5.0 V 150 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS VGS = VDS, ID = 250 mA 1.0 2.5 4.0 V mV/°C W VGS = 10 V, ID = 500 mA 1.19 1.6 VGS = 4.5 V, ID = 200 mA 1.33 2.5 VDS = 5 V, ID = 200 mA 530 mS 24.5 pF CHARGES AND CAPACITANCES CISS Input Capacitance VGS = 0 V, f = 1 MHz, VDS = 20 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 2.2 Total Gate Charge QG(TOT) 0.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 4.5 V, VDS = 10 V; ID = 200 mA 4.2 nC 0.1 0.3 0.1 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time ns 12.2 VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 W tf 9.0 55.8 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.8 TJ = 85°C 0.7 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 2N7002W, 2V7002W TYPICAL CHARACTERISTICS 9.0 V 8.0 V 7.0 V 6.0 V 1.2 1.2 5.0 V 4.5 V VGS = 10 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 4.0 V 3.5 V 0.8 3.0 V 0.4 0.8 TJ = 25°C 0.4 2.5 V 0 2 4 6 0 4 6 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics VGS = 4.5 V TJ = 125°C 2.4 TJ = 85°C TJ = 25°C 2.0 1.6 TJ = −55°C 1.2 0.8 0.4 0 0 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.2 2.8 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 3.2 VGS = 10 V 2.8 2.4 TJ = 125°C 2.0 TJ = 85°C 1.6 TJ = 25°C 1.2 TJ = −55°C 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 2.4 2.2 ID = 0.2 A 2.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 125°C 0 ID = 500 mA 1.6 ID = 200 mA 1.2 0.8 4 6 8 VGS = 4.5 V 10 VGS = 10 V 1.4 1.0 0.6 −50 0.4 2 1.8 −25 0 25 50 75 100 125 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature www.onsemi.com 3 150 2N7002W, 2V7002W TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 30 C, CAPACITANCE (pF) Ciss 20 TJ = 25°C VGS = 0 V Coss 10 Crss 0 0 4 8 12 16 5 TJ = 25°C ID = 0.2 A 4 3 2 1 0 0 20 0.4 0.6 0.8 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1.0E−6 10 VGS = 0 V VGS = 0 V TJ = 150°C IDSS, LEAKAGE (A) IS, SOURCE CURRENT (A) 0.2 1 TJ = 85°C TJ = 25°C 0.1 1.0E−7 TJ = 125°C 1.0E−8 TJ = 85°C 1.0E−9 TJ = 25°C 0.01 1.0E−10 0.4 0.6 0.8 1.0 1.2 5 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 10 15 20 25 30 35 40 45 50 55 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 60 2N7002W, 2V7002W PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 c A2 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N7002W/D